Electrical Transport — Rational synthesis of a pyridyl-imidazoquinazoline based multifunctional 3D Zn(ii)-MOF: structure, luminescence, selective and sensitive detection of Al3+ and TNP, and its semiconducting device application

4 measurement groups · 26 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Capacitance-frequency measurement

TFD 1 ITO/synthesised 1/Al thin-film device · Thin Film

Constant bias potential; saturated high-frequency capacitance used; film thickness considered ~1 um

Atmosphere: ambient
Geometry: ITO/1/Al sandwich junction
Context: device made from pristine Zn-MOF film with electrodes
Measurement source: p022-p023 · Electrical Characterization · Fig. S24, Eq. S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Relative dielectric constantMarked as a best value within this paper	3.66 x 10^-1	—	—	Text Exact Reported	p023 · Electrical Characterization · Fig. S24

Thermionic emission theory and Cheung method

TFD 1 ITO/synthesised 1/Al thin-film device · Thin Film

dV/dlnI vs I and H(I) vs I analysis for dark and illuminated TFD 1

Temperature: 299
Atmosphere: ambient
Geometry: ITO/1/Al Schottky barrier diode
Context: device made from pristine Zn-MOF film with electrodes
Measurement source: p009 · Optical and electrical characterization · Fig. 7c,d, Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height in dark	0.57 eV	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Schottky barrier height under lightMarked as a best value within this paper	0.49 eV	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Ideality factor in dark	2.66	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Ideality factor under lightMarked as a best value within this paper	1.96	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Series resistance from dV/dlnI in dark	857.62 ohm	—	—	Table Exact Reported	p009 · Table 1 · Table 1
Series resistance from dV/dlnI under light	535.39 ohm	—	—	Table Exact Reported	p009 · Table 1 · Table 1
Series resistance from H(I) in dark	813.83 ohm	—	—	Table Exact Reported	p009 · Table 1 · Table 1
Series resistance from H(I) under lightMarked as a best value within this paper	490.86 ohm	—	—	Table Exact Reported	p009 · Table 1 · Table 1

Current-voltage (I-V) measurement using Keithley 2401 sourcemeter

Electrical conductivity

TFD 1 ITO/synthesised 1/Al thin-film device · Thin Film

Room temperature 26 deg C; dark and photo-irradiation at about 100 mW cm-2; bias within +/-2 V

Temperature: 299
Atmosphere: ambient
Geometry: ITO/1/Al sandwich metal-semiconductor junction; effective area 7.065 x 10^-2 cm^2
Context: device made from pristine Zn-MOF film with electrodes
Measurement source: p008-p009 · Optical and electrical characterization · Fig. 7b, Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity in dark	11.40 x 10^-4 S m^-1	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Electrical conductivity under lightMarked as a best value within this paper	53.50 x 10^-4 S m^-1	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Rectification ratio Ion/Ioff in dark at +/-2 V	21.68	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Rectification ratio Ion/Ioff under light at +/-2 VMarked as a best value within this paper	81.42	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1
Photo sensitivityMarked as a best value within this paper	3.24	—	—	Table Exact Reported	p009 · Optical and electrical characterization · Table 1

SCLC/Mott-Gurney analysis of ln I vs ln V and I vs V^2

Space-charge-limited current analysis

TFD 1 ITO/synthesised 1/Al thin-film device · Thin Film

Dark and irradiated device; region I ohmic, region II trap-free SCLC

Temperature: 299
Atmosphere: ambient
Geometry: ITO/1/Al sandwich junction
Context: device made from pristine Zn-MOF film with electrodes
Measurement source: p009-p010 · Optical and electrical characterization · Fig. 8, Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Diffusion coefficient in dark	2.32 x 10^-5	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Diffusion coefficient under lightMarked as a best value within this paper	1.26 x 10^-4	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Diffusion length in dark	1.30 x 10^-7 m	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Diffusion length under lightMarked as a best value within this paper	1.69 x 10^-7 m	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Effective carrier mobility in dark	9.01 x 10^-4 m^2 V^-1 s^-1	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Effective carrier mobility under lightMarked as a best value within this paper	4.89 x 10^-3 m^2 V^-1 s^-1	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Mobility-lifetime product in dark	3.29 x 10^-13	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Mobility-lifetime product under lightMarked as a best value within this paper	5.56 x 10^-13	—	—	Table Exact Reported	p010 · Table 2 · Table 2
ln I vs ln V slope region I	about 1	—	about	Text Approximate	p009 · Optical and electrical characterization · Fig. 8a
ln I vs ln V slope region II	about 2	—	about	Text Approximate	p009 · Optical and electrical characterization · Fig. 8a
Transit time in dark	3.65 x 10^-10 s	—	—	Table Exact Reported	p010 · Table 2 · Table 2
Transit time under lightMarked as a best value within this paper	1.14 x 10^-10 s	—	—	Table Exact Reported	p010 · Table 2 · Table 2