Computational Modelling — Computational Modelling of Lead Free FASnI2Br with Copper-Doped Strontium Titanate and Conductive Metal-Organic Frameworks as Charge Transport Layers

40 measurement groups · 210 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

SCAPS-1D back-electrode work-function sweep

FASnI2Br absorber model input · Model

Back metal work functions varied for Au, W, Ni, Pd, Pt and Se.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device family
Measurement source: p013-p014 · 3.11. Impact of Back Electrode Work Function · Table 2; Figure 11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-MoF FF after high Phi	76 %	—	—	Text Rounded Reported	p013 · 3.11. Impact of Back Electrode Work Function · Figure 11
Cu-MoF Jsc at high work function	23 mA cm^-2	—	—	Text Rounded Reported	p013 · 3.11. Impact of Back Electrode Work Function · Figure 11
NTU-09 FF after Phi exceeds 5.2 eV	86 %	—	—	Text Rounded Reported	p013 · 3.11. Impact of Back Electrode Work Function · Figure 11
NTU-09 PCE at higher work function	20 %	—	—	Text Rounded Reported	p013 · 3.11. Impact of Back Electrode Work Function · Figure 11
NTU-09 PCE near low work function	16 %	—	—	Text Rounded Reported	p013 · 3.11. Impact of Back Electrode Work Function · Figure 11
Au back-electrode work function	5.1 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2
Ni back-electrode work function	5.5 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2
Pd back-electrode work function	5.6 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2
Pt back-electrode work function	5.7 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2
Se back-electrode work function	5.9 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2
W back-electrode work function	5.2 eV	—	—	Table Exact Reported	p013 · 3.11. Impact of Back Electrode Work Function · Table 2

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/Cu3(HHTP) model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	1.2 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
CSTO/FASnI2Br conduction band offset	0.1 eV	—	—	Text Rounded Reported	p007 · 3.6. Energy Band Alignment · Figure 6
CSTO/FASnI2Br valence band offset	1.18 eV	—	—	Text Rounded Reported	p007 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	-0.03 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/Cu-MoF model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	0.0 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	-0.34 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/Fe2(DSBDC) model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	0.4 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	-0.18 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/Mn2(DSBDC) model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	1.5 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	-0.58 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/NTU-09 model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	0.2 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	-0.16 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D band alignment calculation

FTO/CSTO/FASnI2Br/Sr-MoF model device · Model

CBO and VBO calculated from electron affinity and bandgap using Equations 37-38.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p007-p008 · 3.6. Energy Band Alignment · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF/FASnI2Br conduction band offset	0.6 eV	—	—	Figure Axis Rounded Reported	p008 · 3.6. Energy Band Alignment · Figure 6
MOF/FASnI2Br valence band offset	0.02 eV	—	—	Text Rounded Reported	p007-p008 · 3.6. Energy Band Alignment · Figure 6

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/Cu3(HHTP) model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHz	14.9 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	1.01e+12 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	6.09e+12 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/Cu-MoF model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHzMarked as a best value within this paper	17.85 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	7.65e+10 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	4.58e+11 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/Fe2(DSBDC) model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHz	13.88 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	3.56e+11 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	2.13e+12 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/Mn2(DSBDC) model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHz	14.63 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	4.1e+12 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	2.43e+13 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/NTU-09 model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHz	14.77 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	1.58e+11 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	9.52e+11 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-frequency / defect-density simulation

FTO/CSTO/FASnI2Br/Sr-MoF model device · Model

Frequency swept from 1 MHz to 6 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p005 · 3.4. Capacitance and Defects Analysis · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
capacitance at 6 MHz	14.12 nF cm^-2	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 1 MHz	2.38e+11 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4
defect density at 6 MHz	1.42e+12 cm^-3 eV^-1	—	—	Text Exact Reported	p005 · 3.4. Capacitance and Defects Analysis · Figure 4

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/Cu3(HHTP) model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweep	17.63 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/Cu-MoF model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweep	19.9 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/Fe2(DSBDC) model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweep	16.1 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/Mn2(DSBDC) model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweepMarked as a best value within this paper	134.36 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/NTU-09 model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweep	18.47 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

SCAPS-1D capacitance-voltage / Mott-Schottky simulation

Mott-Schottky analysis

FTO/CSTO/FASnI2Br/Sr-MoF model device · Model

Voltage sweep from -0.8 to 0.8 V at 1 MHz.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p003-p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
peak capacitance in C-V sweep	15.67 nF cm^-2	—	—	Text Exact Reported	p004 · 3.2. Mott-Schottky and Capacitance Analysis · Figure 2

Shockley-Queisser / solar-cell physics limit check

FASnI2Br absorber model input · Model

Calculated PCE values checked against bandgap-dependent efficiency limit.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device family
Measurement source: p013 · 3.12. Verification of the Device Efficiency

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
calculated PCE upper bound across devicesMarked as a best value within this paper	24.26 %	—	—	Text Exact Reported	p013 · 3.12. Verification of the Device Efficiency
calculated PCE lower bound across devices	15.53 %	—	—	Text Exact Reported	p013 · 3.12. Verification of the Device Efficiency
Shockley-Queisser limit around 1.4 eV	32%-33%	—	—	Text Range	p013 · 3.12. Verification of the Device Efficiency
Shockley-Queisser limit for FASnI2Br bandgap	slightly below 30%	—	—	Text Approximate	p013 · 3.12. Verification of the Device Efficiency

SCAPS-1D generation/recombination rate depth profile

FASnI2Br absorber model input · Model

Generation and recombination rates calculated as functions of depth.

Temperature: 300
Geometry: FASnI2Br absorber in PSC
Context: model absorber
Measurement source: p004-p005 · 3.3. Generation and Recombination Rate · Figure 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
optimal generation depth upper bound	0.5 um	—	—	Text Rounded Reported	p005 · 3.3. Generation and Recombination Rate · Figure 3
optimal generation depth lower bound	0.2 um	—	—	Text Rounded Reported	p005 · 3.3. Generation and Recombination Rate · Figure 3
highest recombination depth	about 0.55 um	—	—	Text Approximate	p005 · 3.3. Generation and Recombination Rate · Figure 3

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/Cu3(HHTP) model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	85.25 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	18.77 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiencyMarked as a best value within this paper	24.26 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.53 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
photon energy at 300 nm	4.133 eV	—	—	Text Exact Reported	p008 · 3.7. IV and QE Analysis
photon energy at 360 nm	3.444 eV	—	—	Text Exact Reported	p008 · 3.7. IV and QE Analysis
peak quantum efficiency at 360 nmMarked as a best value within this paper	99.5 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/Cu-MoF model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	75.79 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	19.86 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiency	15.53 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.03 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
peak quantum efficiency at 360 nm	98.86 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/Fe2(DSBDC) model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	85.11 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	19.33 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiency	20.96 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.27 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
peak quantum efficiency at 360 nm	99.05 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/Mn2(DSBDC) model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	78.11 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	18.81 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiency	16.78 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.14 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
peak quantum efficiency at 360 nm	99.03 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/NTU-09 model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	78.5 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	19.92 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiency	16.34 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.04 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
peak quantum efficiency at 360 nm	99.01 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D illuminated J-V and quantum efficiency simulation

FTO/CSTO/FASnI2Br/Sr-MoF model device · Model

AM1.5 spectrum; incident power 100 mW cm^-2; baseline 300 K.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device
Measurement source: p008-p009 · 3.7. IV and QE Analysis · Table 1; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor	84.47 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
short-circuit current density	18.91 mA cm^-2	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
power conversion efficiency	24.18 %	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
open-circuit voltage	1.51 V	—	—	Table Exact Reported	p009 · 3.7. IV and QE Analysis · Table 1
peak quantum efficiency at 360 nm	99.4 %	—	—	Text Rounded Reported	p008 · 3.7. IV and QE Analysis · Figure 7

SCAPS-1D recombination/lifetime calculation

FASnI2Br absorber model input · Model

Defect density swept from 1.0e14 to 1.0e20 cm^-3.

Temperature: 300
Geometry: FASnI2Br absorber in PSC
Context: model absorber
Measurement source: p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
high defect density	1.0 x 10^20 cm^-3	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1
low defect density	1.0 x 10^14 cm^-3	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1
electron/hole diffusion length at high defect density	0.28 um	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1
electron/hole diffusion length at low defect density	0.87 um	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1
carrier lifetime at high defect density	100 ns	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1
carrier lifetime at low defect density	1000 ns	—	—	Text Rounded Reported	p003 · 3.1. FASnI2Br Carrier Lifetime and Diffusion Length · Figure 1

SCAPS-1D input parameter table

CSTO ETL model input · Model

Baseline CSTO ETL material parameters.

Geometry: 1D ETL layer
Context: model component
Measurement source: p002 · Supplementary Table 1 · Supplementary Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
thickness	0.150 um	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
band gap	2.96 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron affinity	3.9 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
relative permittivity	802	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron mobility	6.6 x 10^3 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
hole mobility	6.6 x 10^2 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
ND doping concentration	1.0 x 10^17 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
defect density	1.0 x 10^15 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/Cu3(HHTP) model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	2.85 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	2.8 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	9.6	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1e+20 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	6.15e+20 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	0.8 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+16 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+14 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/Cu-MoF model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	1.34 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	4.0 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	9.2	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1e+18 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	6.15e+18 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+17 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+17 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D input parameter table

FASnI2Br absorber model input · Model

Baseline FASnI2Br absorber parameters.

Geometry: 1D absorber layer
Context: model component
Measurement source: p002 · Supplementary Table 1 · Supplementary Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
thickness	0.400 um	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
band gap	1.68 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron affinity	4.0 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
relative permittivity	8.2	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron mobility	3.0 x 10^-1 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
hole mobility	2.95 x 10^-1 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
NA doping concentration	8.210 x 10^14 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
defect density	1.35 x 10^13 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/Fe2(DSBDC) model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	1.92 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	3.6 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	9.0	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1e+18 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	6.15e+19 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	800 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+14 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+16 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D input parameter table

FTO model input · Model

Baseline FTO material parameters for the simulated device stack.

Geometry: 1D layer in FTO/CSTO/FASnI2Br/MOF PSC
Context: model component
Measurement source: p002 · Supplementary Table 1 · Supplementary Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
thickness	0.05 um	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
band gap	3.5 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron affinity	4.0 eV	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
relative permittivity	9.0	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
electron mobility	2.0 x 10^1 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
hole mobility	1.0 x 10^1 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
ND doping concentration	1.0 x 10^19 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1
defect density	1.0 x 10^14 cm^-3	—	—	SI Table Exact Reported	p002-p003 · Supplementary Table 1 · Supplementary Table 1

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/Mn2(DSBDC) model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	2.6 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	2.5 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	10.0	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1.8e+18 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	9.15e+19 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	100 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+14 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+15 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/NTU-09 model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	1.72 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	3.8 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	8.0	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1e+20 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	6.15e+20 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	50 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	2e+04 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+16 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+15 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D input parameter table

FTO/CSTO/FASnI2Br/Sr-MoF model device · Model

MOF HTL material parameters from Supplementary Table 2.

Geometry: 1D HTL layer in simulated PSC
Context: model component
Measurement source: p004 · Supplementary Table 2 · Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTL thickness	150 nm	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
band gap	2.3 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron affinity	3.4 eV	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
relative permittivity	9.8	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
CB effective density of states	1e+20 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
VB effective density of states	6.15e+21 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
electron mobility	1e+07 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
hole mobility	100 cm^2 V^-1 s^-1	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
NA doping concentration	1e+15 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2
defect density	1e+14 cm^-3	—	—	SI Table Exact Reported	p004 · Supplementary Table 2 · Supplementary Table 2

SCAPS-1D temperature sweep

FASnI2Br absorber model input · Model

Temperature varied from 280 to 500 K; text also discusses 250-500 K traces in Figure 10.

Temperature: 280-500
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model device family
Measurement source: p012-p013 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-MoF Jsc near 500 K	19.3 mA cm^-2	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10
Cu-MoF Jsc before temperature decline	20.0 mA cm^-2	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10
NTU-09 Jsc at 500 K	18.9 mA cm^-2	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10
NTU-09 Jsc before temperature decline	19.9 mA cm^-2	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10
temperature sweep upper bound	500 K	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10
temperature sweep lower bound	280 K	—	—	Text Rounded Reported	p012 · 3.10. Influence of FASnI2Br Temperature Variations · Figure 10

SCAPS-1D absorber thickness and Nt sweep

FASnI2Br absorber model input · Model

FASnI2Br thickness varied 0.1-1.0 um; defect density varied 1e10-1e16 cm^-3.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model optimisation
Measurement source: p008-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Jsc at 0.1 um absorber thickness	9.5 mA cm^-2	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Jsc at 0.2 um absorber thickness	14.13 mA cm^-2	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Jsc at 0.5 um absorber thickness	20.31 mA cm^-2	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Jsc at 1.0 um absorber thickness	21.85 mA cm^-2	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Jsc at high Nt over 0.6-1.0 um endpoint	18.76 mA cm^-2	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
PCE at 0.1 um absorber thickness	9.4 %	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
PCE after high-Nt decline	14.85 %	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
PCE before high-Nt decline	28.48 %	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
maximum PCE at 1.0 um absorber thicknessMarked as a best value within this paper	31.20 %	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Voc at 0.1 um high Nt	1.227 V	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Voc at 0.1 um lower Nt	1.593 V	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Voc upper value across thickness/defect range	1.65 V	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8
Voc lower value across thickness/defect range	1.16 V	—	—	Text Rounded Reported	p009-p010 · 3.8. FASnI2Br Thickness and Defects Density · Figure 8

SCAPS-1D absorber thickness and NA doping sweep

FASnI2Br absorber model input · Model

FASnI2Br thickness varied 0.1-1.0 um; NA varied 1e8-1e18 cm^-3.

Temperature: 300
Geometry: FTO/CSTO/FASnI2Br/MOF PSC
Context: model optimisation
Measurement source: p010-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
maximum FF at high NA	90.84 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
FF at high NA lower thickness	85.30 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
FF after slight decrease	83.11 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
FF lower-thickness/doping value	85.32 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Jsc at 0.3 um and NA 1e17 cm^-3	15.60 mA cm^-2	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Jsc at 0.5 um and NA 1e17 cm^-3	18.46 mA cm^-2	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Jsc at high NA and 1.0 um	21.85 mA cm^-2	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
PCE at 0.55 um and NA 1e17 cm^-3	25.65 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
PCE below 0.55 um	16.95 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
PCE at high NA and optimal thicknessMarked as a best value within this paper	30 %	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Voc at 0.6 um and NA to 1e16 cm^-3	1.566 V	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Voc before high-doping decline	1.599 V	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9
Voc at NA 1e18 cm^-3	1.49 V	—	—	Text Rounded Reported	p011-p012 · 3.9. FASnI2Br Thickness and NA Doping Concentration · Figure 9