Electrical Transport — Exploration of Variable Temperature Magnetism and Electrical Properties of a Pyridyl-isonicotinoyl Hydrazone Bridged Three-Dimensional Mn-Metal-Organic Framework with a Thiophene Dicarboxylato Link

3 measurement groups · 19 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

ITO/1/Al thin-film Schottky device · Thin Film

dV/d ln J versus J and H(J) versus J curves in absence of light

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height from H(J)-J	0.60 eV	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
Schottky barrier height from ln J-V plotMarked as a best value within this paper	0.65 eV	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
ideality factor from dV/dlnJ-J	4.20	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
ideality factor from ln J-V plot	4.44	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
series resistance from dV/dlnJ-JMarked as a best value within this paper	0.03 ohm	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
series resistance from H(J)-J	0.026 ohm	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1

ITO/1/Al thin-film Schottky device · Thin Film

ITO/1/Al device; voltage swept from -2 V to +2 V; dark condition for Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
electrical conductivityMarked as a best value within this paper	3.42 x 10^-5 S m^-1	—	—	Table Exact Reported	7 · Electrical Characterization · Table 1
approximate forward current density at +2 V	approximately 150 A m^-2 at +2 V	—	visual estimate from Figure 10a axis	Figure Axis Approximate	6 · Electrical Characterization · Figure 10a
rectification ratio at 1 VMarked as a best value within this paper	61.75 in 1 V	—	—	Text Exact Reported	6 · Electrical Characterization · Figure 10
I-V voltage sweep range	-2 V to +2 V	—	—	Text Range	2 · Device Fabrication and Optical Measurements

ITO/1/Al thin-film Schottky device · Thin Film

ln J vs ln V and J vs V^2; three transport regions fitted

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier mobility-dielectric constant productMarked as a best value within this paper	3.7 x 10^-6 m2 V^-1 s^-1	—	—	Text Exact Reported	7 · Electrical Characterization · Figure 12b
Region I slope m1	0.56	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
Region II slope m2	1.65	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
Region III slope k	2.56	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
threshold voltage V1thMarked as a best value within this paper	0.19 V	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
threshold voltage V2th	0.77 V	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
trap energy ETMarked as a best value within this paper	0.041 eV	—	—	Table Exact Reported	7 · Electrical Characterization · Table 2
Region I current-voltage relation	I proportional to V	—	—	Text Qualitative	7 · Electrical Characterization · Figure 12a
Region II current-voltage relation	I proportional to V^2	—	—	Text Qualitative	7 · Electrical Characterization · Figure 12b