Computational Modelling — Semiconducting properties of pyridyl appended linear dicarboxylate based coordination polymers: Theoretical prediction: Via DFT study

Measurement evidence

Computational Modelling

Semiconducting properties of pyridyl appended linear dicarboxylate based coordination polymers: Theoretical prediction: Via DFT study · Ahmed F., Ortega-Castro J., Frontera A. et al. · Dalton Transactions · 2021 · 270-278

7 measurement groups · 29 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

DFT band structure and PDOS using CASTEP, GGA-PBE, norm-conserving pseudopotentials, Koelling-Harmon relativistic treatment, 600 eV cutoff, 1 x 1 x 1 Monkhorst-Pack k-mesh, Grimme dispersion; PDOS grid 3 x 3 x 2.

Compound 1 DFT crystal model · Model

Atomic positions optimised with experimental lattice fixed; SCF tolerance 2 x 10^-6 eV per atom; conduction bands shifted by a +0.45 eV scissor operator.

Atmosphere
not_applicable
Geometry
periodic crystal model
Context
model system for pristine framework
Measurement source
main pp.2-3, article pp.271-272 · Computational details · Figs. 2-3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compound 1 direct band-gap pathDirect band gap from G branch to F point of BZText
Qualitative
main p.3, article p.272 · Electronic band gap measurement · Fig. 2
Compound 1 valence/conduction orbital assignmentValence bands mainly dominated by adc and water p orbitals; conduction-band bottom mainly 4-phpy 2p orbitals; Cd contribution negligible near LUMO.Text
Qualitative
main p.4, article p.273 · Study of partial density of states (PDOS) · Figs. 3-4
Compound 1 DFT scissor operator shift+0.45 eVText
Exact Reported
main p.3, article p.272 · Computational details · Fig. 2

DFT band structure and PDOS using CASTEP, GGA-PBE, norm-conserving pseudopotentials, Koelling-Harmon relativistic treatment, 600 eV cutoff, 1 x 1 x 1 Monkhorst-Pack k-mesh, Grimme dispersion; PDOS grid 3 x 3 x 3.

Compound 2 DFT crystal model · Model

Atomic positions optimised with experimental lattice fixed; SCF tolerance 2 x 10^-6 eV per atom; conduction bands shifted by a +1.40 eV scissor operator.

Atmosphere
not_applicable
Geometry
periodic crystal model
Context
model system for pristine framework
Measurement source
main pp.2-3, article pp.271-272 · Computational details · Figs. 2-3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compounds 2 and 3 principal direct band-gap pathsDirect band gaps principally in G to Z and G to F points of their BZText
Qualitative
main p.3, article p.272 · Electronic band gap measurement · Fig. 2
Compound 2 valence/conduction orbital assignmentValence bands mainly dominated by adc and water p orbitals; conduction-band bottom mainly 4-phpy 2p orbitals; Zn contribution negligible near LUMO.Text
Qualitative
main p.4, article p.273 · Study of partial density of states (PDOS) · Figs. 3 and 5
Compound 2 DFT scissor operator shiftMarked as a best value within this paper+1.4 eVText
Exact Reported
main p.3, article p.272 · Computational details · Fig. 2

DFT band structure and PDOS using CASTEP, GGA-PBE, norm-conserving pseudopotentials, Koelling-Harmon relativistic treatment, 600 eV cutoff, 1 x 1 x 1 Monkhorst-Pack k-mesh, Grimme dispersion; PDOS grid 3 x 3 x 2.

Compound 3 DFT crystal model · Model

Atomic positions optimised with experimental lattice fixed; SCF tolerance 2 x 10^-6 eV per atom; conduction bands shifted by a +0.60 eV scissor operator.

Atmosphere
not_applicable
Geometry
periodic crystal model
Context
model system for pristine framework
Measurement source
main pp.2-3, article pp.271-272 · Computational details · Figs. 2-3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compound 3 valence/conduction orbital assignmentMarked as a best value within this paperCu 3d orbitals and muconate 2p orbitals dominate the valence-band top and conduction-band bottom.Text
Qualitative
main p.6, article p.275 · Study of partial density of states (PDOS) · Figs. 3 and 6
Compound 3 DFT scissor operator shift+0.6 eVText
Exact Reported
main p.3, article p.272 · Computational details · Fig. 2

TD-DFT excited-state energy and geometry calculations implemented in CASTEP; Dmol3 molecular orbital starting calculations with DNP basis and PBE functional.

Compound 3 DFT crystal model · Model

First two excited states calculated for compound 3; SI Table S2 reports ground-state, first-excited and second-excited geometrical measurements.

Atmosphere
not_applicable
Geometry
periodic crystal/model calculation
Context
model system for pristine framework
Measurement source
main p.3, article p.272 · Computational details · Table S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compound 3 excited-state Cu-ligand bond elongation0.05-0.07 A elongationText
Range
main p.7, article p.276 · Measurement of optical parameters · Table S2
Compound 3 first excited-state transition-energy reductionMarked as a best value within this paper0.15 eV decreaseText
Exact Reported
main p.7, article p.276 · Measurement of optical parameters · Table S2
Compound 3 new excited-state Cu-O6 bondnew bond between Cu-O6 in the 1st and 2nd excited statesText
Qualitative
main p.7, article p.276 · Measurement of optical parameters · Table S2
Compound 3 Cu-N1 bond length in first excited stateCu-N1: GS 2.07 A, 1st 2.12 A, 2nd 2.11 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-N1 bond length in ground stateCu-N1: GS 2.07 A, 1st 2.12 A, 2nd 2.11 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O1 bond length in first excited stateCu-O1: GS 1.99 A, 1st 2.06 A, 2nd 2.04 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O1 bond length in ground stateCu-O1: GS 1.99 A, 1st 2.06 A, 2nd 2.04 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O2 bond length in first excited stateCu-O2: GS 2.01 A, 1st 2.06 A, 2nd 2.08 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O2 bond length in ground stateCu-O2: GS 2.01 A, 1st 2.06 A, 2nd 2.08 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O6 bond length in first excited stateCu-O6: no GS value, 1st 2.22 A, 2nd 2.23 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2
Compound 3 Cu-O6 bond length in second excited stateCu-O6: no GS value, 1st 2.22 A, 2nd 2.23 ASI Table
Exact Reported
SI p.5 · Table S2 · Table S2

Computed optical conductivity sigma(omega) versus photon energy for polarised light directions.

Compound 1 DFT crystal model · Model

Photon energy range 0-16 eV; plotted real and imaginary parts for compounds 1-3. Measurement row is attached to compound 1 model; result names specify compounds 1-3.

Atmosphere
not_applicable
Geometry
periodic crystal model
Context
model systems for pristine frameworks
Measurement source
main p.7, article p.276 · Measurement of optical parameters · Fig. 8
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Computed optical conductivity response under illuminationOptical conductivity behaviour is similar to dielectric constant; conductivity and photoconductivity increase as a consequence of photon absorption.Text
Qualitative
main p.6, article p.275 · Measurement of optical parameters · Fig. 8

Computed frequency-dependent dielectric function epsilon(omega) from band structures for plane-polarised light along (100), (010), and (001); 0.2 eV smearing.

Compound 1 DFT crystal model · Model

Photon energy range 0-16 eV; anisotropic dielectric components decomposed into x, y and z directions. Measurement row is attached to compound 1 model; result names specify compounds 1-3.

Atmosphere
not_applicable
Geometry
periodic crystal model
Context
model systems for pristine frameworks
Measurement source
main p.6, article p.275 · Dielectric function study · Fig. 7
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compound 1 dielectric absorption range3.4-8 eVText
Range
main p.6, article p.275 · Dielectric function study · Fig. 7
Compound 1 epsilon_xx and epsilon_yy dielectric onsetepsilon_xx and epsilon_yy start at 3.8 eVText
Rounded Reported
main p.6, article p.275 · Dielectric function study · Fig. 7
Compound 1 epsilon_zz dielectric onsetepsilon_zz starts at 3.5 eVText
Rounded Reported
main p.6, article p.275 · Dielectric function study · Fig. 7
Compound 3 common dielectric component onsetall components started at 2.0 eVText
Rounded Reported
main p.6, article p.275 · Dielectric function study · Fig. 7
Compound 3 dielectric peak energy 14.0 eVText
Rounded Reported
main p.6, article p.275 · Dielectric function study · Fig. 7
Compound 3 dielectric peak energy 26.2 eVText
Rounded Reported
main p.6, article p.275 · Dielectric function study · Fig. 7

TD-DFT excited-state energy and geometry calculations implemented in CASTEP; Dmol3 molecular orbital starting calculations with DNP basis and PBE functional.

Compound 1 DFT crystal model · Model

First two excited states calculated for compound 1; SI Table S1 reports ground-state, first-excited and second-excited geometrical measurements.

Atmosphere
not_applicable
Geometry
periodic crystal/model calculation
Context
model systems for pristine frameworks
Measurement source
main p.3, article p.272 · Computational details · Tables S1-S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Compound 1 first excited-state transition-energy reduction0.04 eV dropText
Exact Reported
main p.7, article p.276 · Measurement of optical parameters · Table S1
Compound 1 Cd-N2 bond length in second excited stateCd-N2: GS 2.33 A, 1st 2.33 A, 2nd 2.37 ASI Table
Exact Reported
SI p.4 · Table S1 · Table S1
Compound 1 C13-C14-C17-C18 dihedral angle in second excited stateC13-C14-C17-C18: GS 18.8 deg, 1st 10.0 deg, 2nd 9.2 degSI Table
Exact Reported
SI p.4 · Table S1 · Table S1