DFT band structure and PDOS using CASTEP, GGA-PBE, norm-conserving pseudopotentials, Koelling-Harmon relativistic treatment, 600 eV cutoff, 1 x 1 x 1 Monkhorst-Pack k-mesh, Grimme dispersion; PDOS grid 3 x 3 x 2.
Compound 1 DFT crystal model · Model
Atomic positions optimised with experimental lattice fixed; SCF tolerance 2 x 10^-6 eV per atom; conduction bands shifted by a +0.45 eV scissor operator.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Compound 1 direct band-gap path | Direct band gap from G branch to F point of BZ | — | — | Text Qualitative | main p.3, article p.272 · Electronic band gap measurement · Fig. 2 |
| Compound 1 valence/conduction orbital assignment | Valence bands mainly dominated by adc and water p orbitals; conduction-band bottom mainly 4-phpy 2p orbitals; Cd contribution negligible near LUMO. | — | — | Text Qualitative | main p.4, article p.273 · Study of partial density of states (PDOS) · Figs. 3-4 |
| Compound 1 DFT scissor operator shift | +0.45 eV | — | — | Text Exact Reported | main p.3, article p.272 · Computational details · Fig. 2 |