Electrical Transport — Fabrication of Cu(II) based halobenzoate appended ladder polymers with efficient charge transport properties

7 measurement groups · 30 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

FTO/compound 1/Al thin-film diode · Thin Film

Agilent 4294A impedance measurement; relative dielectric constants calculated from C-f saturation levels

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
relative dielectric constant	5.49	—	—	Text Exact Reported	S8 · Mott-Gurney equation · Fig. S7
relative dielectric constantMarked as a best value within this paper	21.92	—	—	Text Exact Reported	S8 · Mott-Gurney equation · Fig. S7

FTO/compound 1/Al thin-film diode · Thin Film

bias from -1 V to +1 V at room temperature under dark conditions

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
low-voltage ohmic electrical conductivity	1.16 x 10^-5 S m^-1	0.0000116 S m^-1	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
rectification ratio	7.18	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1

FTO/compound 2/Al thin-film diode · Thin Film

bias from -1 V to +1 V at room temperature under dark conditions

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
low-voltage ohmic electrical conductivityMarked as a best value within this paper	8.85 x 10^-4 S m^-1	0.000885 S m^-1	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
rectification ratioMarked as a best value within this paper	26.78	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1

FTO/compound 1/Al thin-film diode · Thin Film

linear fitting of dV/dlnJ vs J, H(J) vs J, and F(V) vs V curves

Temperature: room temperature
Atmosphere: dark conditions
Geometry: FTO/compound 1/Al
Context: pristine framework thin film on device contacts
Measurement source: 6723-6724 · Current-voltage analysis · Fig. 5b,d; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height from H vs J	0.70 eV	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
barrier height from F(V) vs V	0.70 eV	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
ideality factor eta	3.21	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from dV/dlnJ vs J	5.41 KOhm	5410 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from H vs J	5.76 KOhm	5760 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from F(V) vs V	3.50 KOhm	3500 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1

FTO/compound 2/Al thin-film diode · Thin Film

linear fitting of dV/dlnJ vs J, H(J) vs J, and F(V) vs V curves

Temperature: room temperature
Atmosphere: dark conditions
Geometry: FTO/compound 2/Al
Context: pristine framework thin film on device contacts
Measurement source: 6723-6724 · Current-voltage analysis · Fig. 5c,d; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height from H vs JMarked as a best value within this paper	0.58 eV	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
barrier height from F(V) vs VMarked as a best value within this paper	0.58 eV	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
ideality factor etaMarked as a best value within this paper	1.78	—	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from dV/dlnJ vs JMarked as a best value within this paper	0.10 KOhm	100 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from H vs J	0.12 KOhm	120 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1
series resistance from F(V) vs VMarked as a best value within this paper	0.10 KOhm	100 Ohm	—	Table Exact Reported	6724 · Current-voltage analysis · Table 1

FTO/compound 1/Al thin-film diode · Thin Film

forward-bias lnJ-lnV and J-V^2 analysis; region II used for SCLC parameters

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration near Fermi level	5.5 x 10^20 m^-3	—	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
lnJ-lnV slope region I	slope 1.19	—	—	Figure Axis Approximate	6724 · Current-voltage analysis · Fig. 6a
lnJ-lnV slope region II	slope 2.93	—	—	Figure Axis Approximate	6724 · Current-voltage analysis · Fig. 6a
effective interface mobility	1.13 x 10^-6 m^2 V^-1 s^-1	—	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
SCLC region conductivity	9.98 x 10^-5 S m^-1	0.0000998 S m^-1	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
carrier transit time	620 x 10^-9 s	6.2e-7 s	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2

FTO/compound 2/Al thin-film diode · Thin Film

forward-bias lnJ-lnV and J-V^2 analysis; region II used for SCLC parameters

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration near Fermi levelMarked as a best value within this paper	20.03 x 10^20 m^-3	—	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
lnJ-lnV slope region I	slope 1.11	—	—	Figure Axis Approximate	6724 · Current-voltage analysis · Fig. 6a
lnJ-lnV slope region II	slope 1.93	—	—	Figure Axis Approximate	6724 · Current-voltage analysis · Fig. 6a
effective interface mobilityMarked as a best value within this paper	8.49 x 10^-6 m^2 V^-1 s^-1	—	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
SCLC region conductivityMarked as a best value within this paper	2.72 x 10^-3 S m^-1	0.00272 S m^-1	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2
carrier transit timeMarked as a best value within this paper	80 x 10^-9 s	8e-8 s	—	Table Exact Reported	6725 · Current-voltage analysis · Table 2