Thermoelectric — 2D Single-Layer π-Conjugated Nickel Bis(dithiolene) Complex: A Good-Electron-Poor-Phonon Thermoelectric Material

Measurement evidence

Thermoelectric

2D Single-Layer π-Conjugated Nickel Bis(dithiolene) Complex: A Good-Electron-Poor-Phonon Thermoelectric Material · Deng T., Yong X., Shi W. et al. · Advanced Electronic Materials · 2019 · 1800892

4 measurement groups · 33 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Boltzmann transport equation in single-mode relaxation time approximation

perfect monolayer MoS2 model · Model

Electron transport coefficients calculated versus chemical potential, temperature and n-type carrier concentration; electron-phonon scattering included.

Temperature
200-500 K; table values at 300 K
Atmosphere
vacuum model
Geometry
2D monolayer with 0.615 nm effective thickness
Context
pristine model comparator
Measurement source
6 · 2.3 Charge Transport and Thermoelectric Performance · Figure 3; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
electronic thermal conductivity at peak zT doping0.68 W m^-1 K^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
lattice thermal conductivity literature range used for zT40-110 W m^-1 K^-1rangeTable
Range
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
highest reported electron mobility comparatorMarked as a best value within this paper127 cm^2 V^-1 s^-1Text
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance
2D carrier concentration at peak zTMarked as a best value within this paper5.1 x 10^12 cm^-25100000000000 cm^-2approximatelyText
Approximate
5 · 2.3 Charge Transport and Thermoelectric Performance
n-type carrier concentration at peak zTMarked as a best value within this paper8.29 x 10^19 cm^-382900000000000000000 cm^-3approximately in text, exact in Table 2Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
power factor at peak zT dopingMarked as a best value within this paper48 microW cm^-1 K^-2Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
Seebeck coefficient at n3D = 10^19 cm^-3-353 microV K^-1 at 300 KText
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance
electrical conductivity at peak zT doping0.15 x 10^3 S cm^-1150 S cm^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
electron mobility at peak zT doping113 cm^2 V^-1 s^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
Seebeck coefficient at peak zT doping-179 microV K^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
estimated zT at peak dopingMarked as a best value within this paper0.01-0.03rangeTable
Range
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2

Boltzmann transport equation in single-mode relaxation time approximation

perfect monolayer (NiC4S4)n model nanosheet · Model

Electron transport coefficients calculated versus chemical potential, temperature and n-type carrier concentration; electron-phonon scattering included.

Temperature
200-500 K; table values at 300 K
Atmosphere
vacuum model
Geometry
2D monolayer with 0.32 nm effective thickness
Context
pristine model system
Measurement source
5 · 2.3 Charge Transport and Thermoelectric Performance · Figure 3; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
maximum reported electron mobility at 300 KMarked as a best value within this paperas high as 894 cm^2 V^-1 s^-1 at 300 KText
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance · Figure 3a
p-type carrier mobility2 cm^2 V^-1 s^-1Text
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance
chemical potential offset at peak zTMarked as a best value within this paper25 meV below CBMText
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance
2D carrier concentration at peak zTMarked as a best value within this paper0.39 x 10^12 cm^-2390000000000 cm^-2approximatelyText
Approximate
5 · 2.3 Charge Transport and Thermoelectric Performance
n-type carrier concentration at peak zTMarked as a best value within this paper1.23 x 10^19 cm^-312300000000000000000 cm^-3approximately in text, exact in Table 2Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
Table 2 power factor at peak zT dopingMarked as a best value within this paper72 microW cm^-1 K^-2Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
peak power factor at 300 KMarked as a best value within this paper73 microW cm^-1 K^-2Text
Exact Reported
2 · Introduction
peak figure of merit zT at 300 KMarked as a best value within this paper0.92Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
Seebeck coefficient at n3D = 10^19 cm^-3-239 microV K^-1 at 300 KText
Exact Reported
5 · 2.3 Charge Transport and Thermoelectric Performance
electrical conductivity at peak zT dopingMarked as a best value within this paper1.44 x 10^3 S cm^-11440 S cm^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
electronic thermal conductivity at peak zT doping0.30 W m^-1 K^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
electron mobility at peak zT doping733 cm^2 V^-1 s^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2
Seebeck coefficient at peak zT doping-224 microV K^-1Table
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance · Table 2

BTE with bare Coulomb charged impurity scattering

perfect monolayer MoS2 model · Model

Effective impurity density of 2 x 10^11 cm^-2 used to compare calculated MoS2 transport with experimental monolayer MoS2 context.

Temperature
300 K where comparison discussed
Atmosphere
vacuum model
Geometry
2D monolayer
Context
impurity-scattering model on pristine structure
Measurement source
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
effective bare Coulomb impurity density used for MoS2 fit2 x 10^11 cm^-2200000000000 cm^-2Text
Exact Reported
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
calculated MoS2 mobility at literature doping without impurity correction108 cm^2 V^-1 s^-1Text
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance
calculated MoS2 power factor at literature doping without impurity correction47 microW cm^-1 K^-2Text
Exact Reported
6 · 2.3 Charge Transport and Thermoelectric Performance
calculated MoS2 mobility with impurity fit41 cm^2 V^-1 s^-1Text
Exact Reported
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
calculated MoS2 power factor with impurity fit23 microW cm^-1 K^-2Text
Exact Reported
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
calculated MoS2 Seebeck coefficient with impurity fit-170 microV K^-1Text
Exact Reported
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
literature experimental MoS2 electron concentration comparator1.2 x 10^20 cm^-3120000000000000000000 cm^-3approximatelyText
Approximate
6 · 2.3 Charge Transport and Thermoelectric Performance
literature experimental MoS2 power factor comparator30 microW cm^-1 K^-2reasonably highText
Approximate
6 · 2.3 Charge Transport and Thermoelectric Performance

BTE with bare Coulomb charged impurity scattering

perfect monolayer (NiC4S4)n model nanosheet · Model

Different effective impurity densities added to electron-phonon scattering; values discussed at effective impurity density 2 x 10^11 cm^-2.

Temperature
300 K where peak values discussed
Atmosphere
vacuum model
Geometry
2D monolayer
Context
impurity-scattering model on pristine structure
Measurement source
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
peak power factor with effective impurity density 2 x 10^11 cm^-27.4 microW cm^-1 K^-2Text
Exact Reported
7 · 2.3 Charge Transport and Thermoelectric Performance · Figure 4b