Diffraction Structure — General Synthesis of Mixed Semiconducting Metal Oxide Hollow Spheres with Tunable Compositions for Low-Temperature Chemiresistive Sensing

Measurement evidence

Diffraction Structure

General Synthesis of Mixed Semiconducting Metal Oxide Hollow Spheres with Tunable Compositions for Low-Temperature Chemiresistive Sensing · Wang G., Zhou X., Qin J. et al. · ACS Applied Materials and Interfaces · 2019 · 35060-35067

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Powder X-ray diffraction using Cu K alpha radiation

Ni-Co-Fe-Cu-Zn-TA-400 · Powder

Transmission geometry, 40 mA and 40 kV, scan rate 2 degrees/min, step size 0.02 degrees.

Context
derived MOHS powders
Measurement source
S-3 · 1.4 Characterizations · Figures 3a, S3, S6, S9
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Ni-Co-TA-400 phase assignmentCrystalline NiCo2O4 (JCPDS No. 73-1702)Caption
Qualitative
S-10 · Figure S6 · Figure S6
Ni-Zn-TA-400 phase assignmentMixed crystalline phase indexed to NiO (JCPDS No. 75-0197) and ZnO (JCPDS No. 36-1451)Caption
Qualitative
S-10 · Figure S6 · Figure S6
Quinary MOHS phase assignmentPure crystalline phase with face-centered cubic structure; peaks similar to fcc Co3O4.Text
Qualitative
p004 / 35063 · Results and discussion · Figure 3a
Quinary MOHS fcc XRD peaks36.08, 43.22 and 62.72 degrees 2thetaText
Exact Reported
p004 / 35063 · Results and discussion · Figure 3a