Reported material

PTB7-Th/SiO2/Si bare-dielectric OFET control

This group combines only harmless case, dash and spacing variants of the reported identity. It does not assert a broader chemical equivalence without source review.

1primary papers
1material records
1linked samples
1linked measurements
6linked results
2017–2017publication span

Evidence coverage

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Primary papers

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1 papers

Per-paper identity records

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Show 1 material identity record
Paper and reported nameFormula and componentsStructure contextSource
PTB7-Th/SiO2/Si bare-dielectric OFET control2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect TransistorsPTB7-Th on bare SiO2/Si with Au source/drain electrodesPTB7-Th semiconducting polymer active layerunknown · CompositeBare SiO2 dielectric control OFET without HKUST-1 modification layer.4 / 7262 · Results and discussion · Table 1