Gu Z.-G., Chen S.-C., Fu W.-Q. et al. · ACS Applied Materials and Interfaces · 2017 · 7259-7264
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Using SURMOF HKUST-1 as a SiO2 dielectric modification layer improves OFET mobility, lowers threshold voltage, and raises the on/off ratio compared with bare SiO2 devices.
Caveat: Transport is measured for the full PTB7-Th OFET stack, not for pristine HKUST-1 alone.
4 / 7262 · Results and discussion · Table 1 · Linked to 10 structured results
The article does not report intrinsic electrical conductivity, thermoelectric, porosity, electrochemical, or pristine HKUST-1 transport measurements; HKUST-1 is used as a dielectric interlayer.
Caveat: Based on full main-text and SI review; electrical transport data are reported only for OFET device stacks.
1 / 7259 · Abstract
[111]-oriented crystalline HKUST-1 may template more ordered semiconductor arrays and contribute to enhanced OFET performance.
Caveat: Template mechanism is inferred by the authors; supplementary XRD supports retained HKUST-1 crystallinity but does not directly quantify semiconductor ordering.
3-4 / 7261-7262 · Results and discussion · Figure 3; Figure S4 cited · Linked to 2 structured results
Increasing HKUST-1 LPE cycles increases film thickness and improves OFET performance up to a plateau between two and four cycles.
Caveat: SI AFM scratching figures and Table S1 support the thickness trend; performance differences between two-, three- and four-cycle devices are small.
4 / 7262 · Results and discussion · Table 1 · Linked to 6 structured results
The authors attribute device improvement mainly to the highly crystalline, homogeneous, low-k HKUST-1 film and smaller interface trap density in the OFET.
Caveat: Interface trap density is invoked but not numerically extracted from a reported measurement in the main text.
5 / 7263 · Conclusions · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| SURMOF HKUST-1 thin filmBrowse family: HKUST-1 / Cu₃(BTC)₂ | Cu3(BTC)2Cu paddlewheel nodes from Cu(OAc)2 precursor · BTC = 1,3,5-benzenetricarboxylate | 3D · PristineHKUST-1 SURMOF thin film; XRD weak (222) and (333) peaks assigned to [111]-oriented HKUST-1. | 1 / 7259 · Abstract |
| PTB7-Th/HKUST-1/SiO2/Si OFET stackBrowse family: HKUST-1 / Cu₃(BTC)₂ | PTB7-Th on HKUST-1/SiO2/Si with Au source/drain electrodesCu nodes within HKUST-1 dielectric interlayer · BTC in HKUST-1; PTB7-Th semiconducting polymer active layer | unknown · CompositeTop-contact, bottom-gate OFET with HKUST-1 SURMOF modifying the SiO2 dielectric layer and PTB7-Th as the semiconductor. | 2 / 7260 · Figure caption and discussion · Figure 1 |
| PTB7-Th/SiO2/Si bare-dielectric OFET control | PTB7-Th on bare SiO2/Si with Au source/drain electrodesPTB7-Th semiconducting polymer active layer | unknown · CompositeBare SiO2 dielectric control OFET without HKUST-1 modification layer. | 4 / 7262 · Results and discussion · Table 1 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| SURMOF HKUST-1 on MUD-SAM-functionalized Au for IRRASresearch_0164__mat__mat_hkust1_surmoF | Thin Film · Composite Component · Pristine Framework | Prepared under the same LPE conditions as SiO2/Si samples for IRRAS absorbance measurements.MUD-SAM functionalized Au substrate · Not reported | 3 / 7261 · Results and discussion · Figure 3b |
| Three-cycle SURMOF HKUST-1 on SiO2/Siresearch_0164__mat__mat_hkust1_surmoF | Thin Film · Composite Component · Pristine Framework | Three LPE dipping cycles before PTB7-Th coating.hydroxy-functionalized SiO2/Si · ~9 nm by AFM scratching height profile | 3 / 7261 · Results and discussion · Figures 2a,c and 3c |
| SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film seriesresearch_0164__mat__mat_hkust1_surmoF | Thin Film · Composite Component · Pristine Framework | SiO2/Si oxygen-plasma cleaned, KOH/H2O2 hydroxyl-functionalised, then sequential LPE dipping in Cu(OAc)2 ethanol, BTC ethanol, and ethanol rinse under ultrasonication.hydroxy-functionalized SiO2/Si · Several nanometres; one-, two-, three- and four-cycle HKUST-1 thicknesses reported in SI Table S1 as 2.5, 6, 9 and 13 nm, respectively. | S-4 · Mobilities calculation of MOF-based OFETs · Table S1 |
| Bare SiO2 PTB7-Th OFET controlresearch_0164__mat__mat_ptb7th_sio2_control_ofet | Electrode · Pristine Control · Composite | PTB7-Th spin-coated from ~3 mg/mL chlorobenzene at 3000 rpm for 60 s; Au top-contact electrodes vapour-deposited through shadow mask.bare SiO2/Si · PTB7-Th semiconductor ~15 nm; Au source/drain electrodes ~50 nm | 5 / 7263 · Experimental section · Device Fabrication and Characterization |
| PTB7-Th OFET with one-cycle HKUST-1/SiO2 dielectric layerresearch_0164__mat__mat_ptb7th_hkust1_ofet | Electrode · Target Sample · Composite | One LPE cycle HKUST-1 dielectric modification followed by PTB7-Th spin coating and Au electrode vapour deposition.HKUST-1(1 cycle)/SiO2/Si · HKUST-1 2.5 nm from SI Table S1; PTB7-Th ~15 nm; Au electrodes ~50 nm | S-4 · Mobilities calculation of MOF-based OFETs · Table S1 |
| PTB7-Th OFET with two-cycle HKUST-1/SiO2 dielectric layerresearch_0164__mat__mat_ptb7th_hkust1_ofet | Electrode · Target Sample · Composite | Two LPE cycles HKUST-1 dielectric modification followed by PTB7-Th spin coating and Au electrode vapour deposition.HKUST-1(2 cycles)/SiO2/Si · HKUST-1 ~6 nm; PTB7-Th ~15 nm; Au electrodes ~50 nm | 3 / 7261 · Results and discussion · Figures S2-S3 cited; Table 1 |
| PTB7-Th OFET with three-cycle HKUST-1/SiO2 dielectric layerresearch_0164__mat__mat_ptb7th_hkust1_ofet | Electrode · Target Sample · Composite | Three LPE cycles HKUST-1 dielectric modification followed by PTB7-Th spin coating and Au electrode vapour deposition.HKUST-1(3 cycles)/SiO2/Si · HKUST-1 ~9 nm; PTB7-Th ~15 nm; Au electrodes ~50 nm | 4 / 7262 · Results and discussion · Figure 4; Table 1 |
| PTB7-Th OFET with four-cycle HKUST-1/SiO2 dielectric layerresearch_0164__mat__mat_ptb7th_hkust1_ofet | Electrode · Target Sample · Composite | Four LPE cycles HKUST-1 dielectric modification followed by PTB7-Th spin coating and Au electrode vapour deposition.HKUST-1(4 cycles)/SiO2/Si · HKUST-1 ~13 nm; PTB7-Th ~15 nm; Au electrodes ~50 nm | 4 / 7262 · Results and discussion · Table 1 |