Electrical Transport — Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

6 measurement groups · 31 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET

Field-effect transistor measurements

Bare SiO2 PTB7-Th OFET control · Electrode

Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.

Geometry: top-contact, bottom-gate OFET; W = 6.0 mm, L = 300 um
Context: bare control
Measurement source: 4 / 7262 · Results and discussion; Experimental section · Table 1; Figure 4 for three-cycle example

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average saturation hole mobility	(5.17 +/- 0.52) x 10^-3	—	+/- 0.52 x 10^-3	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Number of devices tested	8	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Current on/off ratio	10^2	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Maximum saturation hole mobility	5.94 x 10^-3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, less-negative endpoint	-13 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, more-negative endpoint	-33 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1

Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET

Field-effect transistor measurements

PTB7-Th OFET with one-cycle HKUST-1/SiO2 dielectric layer · Electrode

Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.

Geometry: top-contact, bottom-gate OFET; W = 6.0 mm, L = 300 um
Context: HKUST-1-modified composite device
Measurement source: 4 / 7262 · Results and discussion; Experimental section · Table 1; Figure 4 for three-cycle example

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average saturation hole mobility	(8.33 +/- 0.47) x 10^-3	—	+/- 0.47 x 10^-3	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Number of devices tested	5	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Current on/off ratioMarked as a best value within this paper	10^3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Maximum saturation hole mobility	8.79 x 10^-3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, less-negative endpoint	-7 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, more-negative endpoint	-10 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1

Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET

Field-effect transistor measurements

PTB7-Th OFET with two-cycle HKUST-1/SiO2 dielectric layer · Electrode

Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.

Geometry: top-contact, bottom-gate OFET; W = 6.0 mm, L = 300 um
Context: HKUST-1-modified composite device
Measurement source: 4 / 7262 · Results and discussion; Experimental section · Table 1; Figure 4 for three-cycle example

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average saturation hole mobility	(1.09 +/- 0.07) x 10^-2	—	+/- 0.07 x 10^-2	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Number of devices tested	7	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Current on/off ratioMarked as a best value within this paper	10^3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Maximum saturation hole mobility	1.16 x 10^-2	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, less-negative endpoint	-3 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, more-negative endpoint	-9 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1

Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET

Field-effect transistor measurements

PTB7-Th OFET with three-cycle HKUST-1/SiO2 dielectric layer · Electrode

Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.

Geometry: top-contact, bottom-gate OFET; W = 6.0 mm, L = 300 um
Context: HKUST-1-modified composite device
Measurement source: 4 / 7262 · Results and discussion; Experimental section · Table 1; Figure 4 for three-cycle example

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average saturation hole mobility	(1.15 +/- 0.23) x 10^-2	—	+/- 0.23 x 10^-2	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Number of devices tested	7	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Current on/off ratioMarked as a best value within this paper	10^3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Maximum saturation hole mobilityMarked as a best value within this paper	1.55 x 10^-2	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, less-negative endpoint	-1 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, more-negative endpoint	-10 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1

Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET

Field-effect transistor measurements

PTB7-Th OFET with four-cycle HKUST-1/SiO2 dielectric layer · Electrode

Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.

Geometry: top-contact, bottom-gate OFET; W = 6.0 mm, L = 300 um
Context: HKUST-1-modified composite device
Measurement source: 4 / 7262 · Results and discussion; Experimental section · Table 1; Figure 4 for three-cycle example

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average saturation hole mobilityMarked as a best value within this paper	(1.32 +/- 0.20) x 10^-2	—	+/- 0.20 x 10^-2	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Number of devices tested	7	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Current on/off ratioMarked as a best value within this paper	10^3	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Maximum saturation hole mobility	1.54 x 10^-2	—	—	Table Exact Reported	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, less-negative endpoint	-1 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1
Threshold voltage range, more-negative endpoint	-8 V	—	—	Table Range	4 / 7262 · Results and discussion · Table 1

Output and transfer characteristic plots

PTB7-Th OFET with three-cycle HKUST-1/SiO2 dielectric layer · Electrode

Output characteristics plotted for Vg = 0 to -100 V; transfer characteristic measured at Vd = -80 V.

Geometry: top-contact, bottom-gate OFET
Context: HKUST-1-modified composite device
Measurement source: 4 / 7262 · Results and discussion · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Output and transfer curves reported	Output curves for Vg = 0, -20, -30, -40, -50, -60, -70, -80, -90 and -100 V; transfer curve includes Id and Id^1/2	—	—	Figure Axis Qualitative	4 / 7262 · Results and discussion · Figure 4