Spectroscopy — Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

Measurement evidence

Spectroscopy

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors · Gu Z.-G., Chen S.-C., Fu W.-Q. et al. · ACS Applied Materials and Interfaces · 2017 · 7259-7264

1 measurement group · 3 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

IRRAS using Bruker Vertex 70 FTIR, 2 cm-1 resolution, 80 deg incidence

SURMOF HKUST-1 on MUD-SAM-functionalized Au for IRRAS · Thin Film

SURMOF HKUST-1 on MUD-SAM-functionalized Au, one to four LPE cycles.

Geometry
thin film on MUD-SAM/Au
Context
pristine HKUST-1 component film
Measurement source
3 / 7261 · Results and discussion; Experimental section · Figure 3b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
IRRAS absorbance trend with LPE cyclesCOO absorbance increased from one to four cyclesText
Qualitative
3 / 7261 · Results and discussion · Figure 3b
COO vibration band1377 cm-1Text
Exact Reported
3 / 7261 · Results and discussion · Figure 3b
COO vibration band1650 cm-1Text
Exact Reported
3 / 7261 · Results and discussion · Figure 3b