cMOF Evidence Base
Other — Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

Measurement evidence

Other

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors · Gu Z.-G., Chen S.-C., Fu W.-Q. et al. · ACS Applied Materials and Interfaces · 2017 · 7259-7264

2 measurement groups · 11 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Literature dielectric constant cited by authors

SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film series · Thin Film

HKUST-1 selected as low-k dielectric modifier; value is cited from references 41 and 42, not newly measured here.

Context
literature property of HKUST-1 component
Measurement source
2 / 7260 · Introduction/results transition
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HKUST-1 dielectric constantk = 1.7——Text
Exact Reported		2 / 7260 · Introduction/results transition

Capacitance calculation for MOF-based OFET mobility analysis

Field-effect transistor measurements

SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film series · Thin Film

300 nm SiO2 dielectric with HKUST-1 films from one to four LPE cycles; authors calculated MOF-layer capacitance as Ci = epsilon0*kappa/d and overall capacitance as Ci=Ci1Ci2/(Ci1+Ci2).

Geometry
HKUST-1 thin film on 300 nm SiO2/Si dielectric
Context
HKUST-1 dielectric component in OFET stack
Measurement source
S-4 · Mobilities calculation of MOF-based OFETs · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HKUST-1 1-cycle MOF-layer capacitance Ci26.0 x 10^-7 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 1-cycle overall dielectric capacitance Ci9.8 x 10^-9 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 2-cycle MOF-layer capacitance Ci22.5 x 10^-7 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 2-cycle overall dielectric capacitance Ci9.6 x 10^-9 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 3-cycle MOF-layer capacitance Ci21.7 x 10^-7 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 3-cycle overall dielectric capacitance Ci9.4 x 10^-9 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 4-cycle MOF-layer capacitance Ci21.2 x 10^-7 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 4-cycle overall dielectric capacitance Ci9.2 x 10^-9 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 1-cycle film thickness2.5——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1
300 nm SiO2 capacitance per unit area Ci110 x 10^-9 F/cm2——SI Table
Exact Reported		S-4 · Mobilities calculation of MOF-based OFETs · Table S1