Microscopy Morphology — Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

3 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Three-cycle SURMOF HKUST-1 on SiO2/Si · Thin Film

Three-cycle SURMOF HKUST-1 on SiO2/Si before PTB7-Th coating.

Geometry: thin film on SiO2/Si
Context: pristine HKUST-1 component film
Measurement source: 2-3 / 7260-7261 · Results and discussion · Figure 2a,c; Figure 3c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HKUST-1 film roughness	~3 nm	—	—	Text Approximate	3 / 7261 · Results and discussion · Figure 2a,c
HKUST-1 film surface morphology	highly homogeneous and smooth surface	—	—	Text Qualitative	3 / 7261 · Results and discussion · Figure 3c

SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film series · Thin Film

Two-, three-, and four-cycle HKUST-1 films scratched to expose substrate; SI Figures S2 and S3 and Table S1 report thickness values.

Geometry: thin film on SiO2/Si
Context: pristine HKUST-1 component film
Measurement source: S-2 to S-3 · AFM scratching experiments and thickness measurements · Figures S2-S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HKUST-1 2-cycle film thickness	6	—	—	SI Table Exact Reported	S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 3-cycle film thickness	9	—	—	SI Table Exact Reported	S-4 · Mobilities calculation of MOF-based OFETs · Table S1
HKUST-1 4-cycle film thickness	13	—	—	SI Table Exact Reported	S-4 · Mobilities calculation of MOF-based OFETs · Table S1

PTB7-Th OFET with three-cycle HKUST-1/SiO2 dielectric layer · Electrode

PTB7-Th coated on three-cycle HKUST-1/SiO2/Si and completed OFET morphology.

Geometry: PTB7-Th/HKUST-1/SiO2/Si OFET stack
Context: composite application device
Measurement source: 3 / 7261 · Results and discussion; Experimental section · Figures 2b,d and 3d,e

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Composite crystallinity retention	PTB7-Th/HKUST-1/SiO2 composite layers kept [111]-oriented HKUST-1 crystallinity	—	—	Text Qualitative	3 / 7261 · Results and discussion · Figure S4 (referenced)
PTB7-Th/HKUST-1 stack roughness	~5 nn	—	—	Text Approximate	3 / 7261 · Results and discussion · Figures 2b,d and 3d,e
PTB7-Th semiconductor thickness	~15 nm	—	—	Text Approximate	3 / 7261 · Results and discussion · Figures 2b,d and 3d,e