cMOF Evidence Base
Diffraction Structure — Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

Measurement evidence

Diffraction Structure

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors · Gu Z.-G., Chen S.-C., Fu W.-Q. et al. · ACS Applied Materials and Interfaces · 2017 · 7259-7264

1 measurement group · 2 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

X-ray diffraction (MiniFlex2, Cu Kalpha, 2theta 4-20 deg, 0.5 deg min-1)

X-ray diffraction and scattering

SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film series · Thin Film

SURMOF HKUST-1 on SiO2/Si with one to four LPE dipping cycles.

Geometry
thin film on SiO2/Si
Context
pristine HKUST-1 component film
Measurement source
3 / 7261 · Results and discussion; Experimental section · Figure 3a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HKUST-1 orientation assignmentweak peaks at (222) and (333), identical to [111] oriented HKUST-1——Text
Qualitative		3 / 7261 · Results and discussion · Figure 3a
XRD intensity trend with LPE cyclesXRD intensities increased from one to four LPE cycles——Text
Qualitative		3 / 7261 · Results and discussion · Figure 3a