Synthesis · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

3 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Other

3 / 7261 · Results and discussion · Figure 3b

Metal precursorsCu(OAc)2 ethanolic solution (same conditions as SiO2/Si LPE)

Linker precursorsBTC ethanolic solution (same conditions as SiO2/Si LPE)

SolventsEthanol

AdditivesMUD-SAM functional layer on Au substrate

AtmosphereNot reported

TemperatureNot reported for LPE growth

TimeNot reported for individual immersion steps; ethanol ultrasonication rinse 60 s inferred from same conditions

Substrate orientationMUD-SAM-functionalized Au substrate; crystallographic orientation not reported

Oxidant / reductantNot reported

Work-upPrepared under same LPE conditions for IRRAS; detailed SAM preparation not supplied.

ActivationNot reported

Scalability contextUsed only as a spectroscopy substrate in the main text.

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	Cu(OAc)2	same as SiO2/Si LPE; 1 mM reported for main LPE recipe	3 / 7261 · Results and discussion · Figure 3b
Linker	BTC	same as SiO2/Si LPE; 0.1 mM reported for main LPE recipe	3 / 7261 · Results and discussion · Figure 3b
Solvent	ethanol	Not specified	3 / 7261 · Results and discussion · Figure 3b
Additive	MUD-SAM on Au	Not specified	3 / 7261 · Results and discussion · Figure 3b

Partial recipeSource: Both

Route 2: Other

S-2 · Figure S1 caption · Figure S1

Metal precursorsCu(OAc)2 ethanolic solution (1 mM)

Linker precursorsBTC ethanolic solution (0.1 mM)

SolventsEthanol; pure ethanol rinse container

AdditivesKOH and H2O2 pretreatment to hydroxyl-functionalize SiO2/Si

AtmosphereNot reported

Temperature80 C for KOH/H2O2 pretreatment; LPE dipping temperature not reported

TimeKOH/H2O2 pretreatment 20 min; oxygen plasma 10 min; ethanol ultrasonication rinse 60 s between immersion steps; individual Cu/BTC immersion times not reported in main text

Substrate orientationSiO2/Si wafer; orientation not reported

Oxidant / reductantH2O2 in substrate pretreatment

Work-upUltrasonication treatment with pure ethanol for 60 s between immersion steps; repeated alternating immersion to one-, two-, three- and four-cycle films.

ActivationNot reported in main text

Scalability contextLayer-by-layer LPE cycles allow controlled thickness; no scale-up or area-yield data reported.

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	Cu(OAc)2	1 mM	S-2 · Figure S1 caption · Figure S1
Linker	BTC	0.1 mM	S-2 · Figure S1 caption · Figure S1
Solvent	ethanol	pure ethanol rinse; ethanolic precursor solutions	S-2 · Figure S1 caption · Figure S1
Base	KOH	KOH/H2O2 = 3:1 · 1 mM	S-2 · Figure S1 caption · Figure S1
Oxidant	H2O2	KOH/H2O2 = 3:1	S-2 · Figure S1 caption · Figure S1

Partial recipeSource: Main

Route 3: Other

5 / 7263 · Experimental section · Device Fabrication and Characterization

Metal precursorsPreformed HKUST-1/SiO2/Si dielectric substrate; Au source/drain electrodes

Linker precursorsPTB7-Th semiconducting polymer

SolventsChlorobenzene for PTB7-Th spin-coating solution

AdditivesNone reported

AtmosphereNot reported for spin coating or Au deposition

TemperatureNot reported

TimeSpin coating 60 s; Au deposition time not reported

Substrate orientationHKUST-1/SiO2/Si or bare SiO2/Si; Si orientation not reported

Oxidant / reductantNone reported

Work-upPTB7-Th spin-coated at 3000 rpm from ~3 mg/mL chlorobenzene; Au source/drain electrodes ~50 nm vapour-deposited through a shadow mask.

ActivationNot reported

Scalability contextDevice geometry reported as channel width 6.0 mm and length 300 um; number of tested devices reported in Table 1.

Show 3 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	PTB7-Th	~3 mg mL-1 in chlorobenzene	5 / 7263 · Experimental section · Device Fabrication and Characterization
Solvent	chlorobenzene	Not specified	5 / 7263 · Experimental section · Device Fabrication and Characterization
Other	Au	~50 nm source/drain electrodes	5 / 7263 · Experimental section · Device Fabrication and Characterization