FET, TFT and transistor transfer/output characterisation.
Every source method stays verbatim. Subtypes retain distinctions such as ATR versus transmission IR, powder versus single-crystal diffraction, and two- versus four-contact transport.
The same technique may serve transport, electrochemistry, sensing or another scientific purpose.
Filter source method wording, sample context and scientific purpose.
98 measurements
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-GA-GOX-FET sensor · Electrode · Electrical properties of Co/Ni-HITP-GA-GOX-FET; liquid-gate transfer curve
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-GA-FET sensor · Electrode · GA-only Co/Ni-HITP-GA-FET exposed to glucose solutions; PBS blank
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-GA-GOX-FET sensor · Electrode · 15 uL PBS blank followed by 15 uL glucose solutions from 10 nmol/L to 10 mmol/L; Vgs = -0.1 V, Vds = -0.1 V, room temperature
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co-HITP-GA-GOX-FET sensor · Electrode · Ni-HITP-GA-GOX-FET, Co-HITP-GA-GOX-FET and Co/Ni-HITP(water)-GA-GOX-FET controls fabricated by same modification method
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-GA-GOX-FET sensor · Electrode · 10 nmol/L glucose, 1 umol/L fructose/sucrose/ascorbic acid interferences, then 100 nmol/L glucose
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-GA-GOX-FET sensor · Electrode · Multiple devices stored at 0-4 deg C and tested at 24 h intervals; same sensor retested at two-day intervals
2026 · In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor
Co/Ni-HITP-FET sensor without modification · Electrode · Unmodified Co/Ni-HITP-FET exposed to glucose solutions; PBS blank
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
cortisol-aptamer-functionalised CuHITP EG-FET sensor · Electrode · Gate voltage swept from -1.5 to 0 V in 0.025 V increments while cortisol concentration increased from 0.1 fM to 10 uM in tenfold steps; n = 3 for calibration.
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
CuHITP/Cu(OH)2 extended-gate electrode · Electrode · CuHITP-based extended-gate electrode integrated with commercial p-channel MOSFET; output at VGS = -1 V, transfer at VDS = -0.4 V; 60 min drift study at 1 min intervals.
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
cortisol-aptamer-functionalised CuHITP EG-FET sensor · Electrode · Transfer curves collected in PBS electrolyte after MBS and MBS-aptamer functionalisation steps.
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
CuHITP/Cu(OH)2 extended-gate electrode · Electrode · SI Figure S12 compares CuHITP/Cu(OH)2/Cu samples after 1, 3, 5, and 15 min conversion; bar chart normalises Gm,max, Vth, SS1, and VGS at Gm,max.
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
CuHITP/Cu(OH)2 extended-gate electrode · Electrode · Sensing electrode exposed to pH 11 to pH 4 in one-unit steps, with Milli-Q rinse between measurements; pH 7 retested after pH 11 and pH 4 exposure.
2026 · Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks
scrambled-aptamer-functionalised CuHITP EG-FET control sensor · Electrode · Sensor functionalised with scrambled aptamer of similar length and GC content exposed to cortisol; compared against specific cortisol aptamer sensor.
2025 · Asymmetrical Substitution Manipulates Stacking Modes in 2D Conductive MOF Crystals
FHHTP molecular crystal/model · Model · Top-contact/bottom-gate and top-gate/bottom-contact device processes; Keithley 4200 SCS under ambient conditions.
2025 · Metal–Organic Frameworks Coordination-Oriented Polymer Dielectrics for Neuromorphic Vision Sensors
PM1-based NeuVS OFET · Electrode · Phototransistors characterized in air using Keithley 2636B; Table 1 reports Vth, Ion/Ioff, S, Ci, and mobility for PAA, PM1, PM2.
2024 · Acid-Dependent Charge Transport in a Solution-Processed 2D Conductive Metal-Organic Framework
Cu3(HHTATP)2 proton-removed spin-coated thin film · Thin Film · Bottom-gate electrode made by applying silver paste under substrate; measured with probe station and Keithley 4200A-SCS.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/TEOS/CuSCN + THF stack · Thin Film · This-work row compared against recent CuSCN and other wide-band-gap p-type TFT reports.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx-200/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx-300/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx-400/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
GaOx-200/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
GaOx-300/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
GaOx-400/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
HfOx-200/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
HfOx-300/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
HfOx-400/CuSCN BG-TC TFT · Thin Film · Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/CuSCN stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/CuSCN + THF stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/MAA/CuSCN stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/MAA/CuSCN + THF stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/TEOS/CuSCN stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
AlOx/TEOS/CuSCN + THF stack · Thin Film · AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.
2024 · High-Performance Ni3(HHTP)2 Film-Based Flexible Field-Effect Transistor Gas Sensors
Ni3(HHTP)2 FET sensor on Si/SiO2 back-gate substrate · Thin Film · Output characteristics: Vds = -1 to +1 V, step voltage 0.01 V, Vgs = +/-1, +/-10 and +/-30 V. Transfer characteristics: Vds = +0.01 V, Vgs = -40 to +40 V, step voltage 0.1 V; ambient condition; measured with Au electrodes on Si/SiO2 back-gate structure.
2024 · MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture
DTT-8 2DMC OFET control · Electrode · Charge-transport properties of OFET based on DTT-8 2DMC.
2024 · MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture
Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistor · Electrode · Floating-gate memory response under varied 365 nm illumination intensities.
2024 · Synthesis of a highly conductive coordination polymer film via a vapor-solid phase chemical conversion process
Ag5BHT thin-film FET device · Electrode · Room-temperature bottom-gate top-contact FET; mobility calculated in the linear regime from IDS=(W mu Ci/L)(VGS-VT)VDS.
2023 · Chemical Vapor Deposition and High-Resolution Patterning of a Highly Conductive Two-Dimensional Coordination Polymer Film
CVD Cu-BHT top-gated FET · Electrode · Keysight B1500 semiconductor analyser; ionic-liquid-gated Cu-BHT FET.
2023 · Chemiresistive and chem-FET Sensor: π-d conjugated metal-organic framework for ultra-sensitive and selective carbon monoxide detection
Zn-HHTP on interdigitated Au electrodes on Si/SiO2 · Electrode · Keithley 4200A SPA; Vgs stepped by 1 V; Vds swept from -10 to +10 V; transfer at Vds = 1 V
2023 · Chemiresistive and chem-FET Sensor: π-d conjugated metal-organic framework for ultra-sensitive and selective carbon monoxide detection
Zn-HHTP on interdigitated Au electrodes on Si/SiO2 · Electrode · Vds optimised at 1 V and kept constant; drain current recorded while varying CO concentration
2023 · Conductive Lanthanide Metal-Organic Frameworks with Exceptionally High Stability
Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode · three-terminal device; gate voltage varied
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
CPO-27-Ni/pentacene bilayer OFET, 3000 rpm MOF coating · Thin Film · Transfer curve of CPO-27-Ni MOF layer coated at 3000 rpm over pentacene; mobility calculated from lower slope to avoid overestimation.
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
CPO-27-Ni/pentacene bilayer OFET, 3000 rpm MOF coating · Thin Film · Transfer characteristics measured over 65 days under ambient atmosphere at room temperature; mobility extracted from transfer curves.
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
CPO-27-Ni/pentacene bilayer OFET, 3000 rpm MOF coating · Thin Film · Carrier mobility compared for CPO-27-Ni/pentacene bilayer devices spin-coated at 2000, 3000, 4000, and 5000 rpm.
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
CPO-27-Ni/pentacene bilayer OFET, 2000 rpm MOF coating · Thin Film · Top-contact bottom-gate bilayer OFETs composed of CPO-27-Ni layer with 2000, 4000 and 5000 rpm coatings and pentacene.
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
CPO-27-Ni/pentacene bilayer OFET, 3000 rpm MOF coating · Thin Film · DES vapour generated by injecting DES liquid into a sealed 200 uL chamber; device biased at Vg = Vd = -3 V under 25 deg C and RH about 45%; concentrations 104, 72, 51, 31, and 10 ppm.
2023 · MOF-Assimilated High-Sensitive Organic Field-Effect Transistors for Rapid Detection of a Chemical Warfare Agent
pristine pentacene-based OFET · Thin Film · Electrical characterisation using two Keithley 2450 instruments in a custom probe station under ambient conditions.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S1-based Ni3(HITP)2-GA-DNA FET sensor · Electrode · 15 uL PBS blank followed by 15 uL Hg2+ solutions from 10 pM to 100 nM; Vgs = -0.1 V and Vds = -0.1 V at room temperature.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S2-based Ni3(HITP)2-GA-DNA FET sensor · Electrode · 15 uL PBS blank followed by 15 uL Hg2+ solutions from 10 pM to 100 nM; Vgs = -0.1 V and Vds = -0.1 V at room temperature.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S3-based Ni3(HITP)2-GA-DNA FET sensor · Electrode · 15 uL PBS blank followed by 15 uL Hg2+ solutions from 10 pM to 100 nM; Vgs = -0.1 V and Vds = -0.1 V at room temperature.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S4-based Ni3(HITP)2-GA-DNA FET sensor · Electrode · 15 uL PBS blank followed by 15 uL Hg2+ solutions from 10 pM to 100 nM; Vgs = -0.1 V and Vds = -0.1 V at room temperature.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S4-based Ni3(HITP)2-GA-DNA FET sensor · Electrode · 10 mM Cu2+, Cd2+, Pb2+, Zn2+, Mg2+ and Co2+ nontarget ions compared with 10 pM Hg2+; 15 uL aliquots in PBS.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S1 Ni3(HITP)2 membrane · Thin Film · Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S2 Ni3(HITP)2 membrane · Thin Film · Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S3 Ni3(HITP)2 membrane · Thin Film · Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.
2022 · Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection
S4 Ni3(HITP)2 membrane · Thin Film · Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.
2022 · Conjugated Metal-Organic Macrocycles: Synthesis, Characterization, and Electrical Conductivity
CuTOTP-OC18 thin-film FET active layer · Thin Film · Top-contact bottom-gate FET; ODTS-passivated heavily B-doped Si/300 nm SiO2; CuTOTP-OC18 spin-coated from 5 mg/mL CHCl3 at 2500 rpm for 60 s; Au electrodes 100 nm; W/L = 1000/50 um; measured under N2.
2022 · Metal-Organic Framework Assembled on Oriented Nanofiber Arrays for Field-Effect Transistor and Gas Sensor-Based Applications
Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 300 r/min · Electrode · Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5d.
2022 · Metal-Organic Framework Assembled on Oriented Nanofiber Arrays for Field-Effect Transistor and Gas Sensor-Based Applications
Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 400 r/min · Electrode · Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5c.
2022 · Metal-Organic Framework Assembled on Oriented Nanofiber Arrays for Field-Effect Transistor and Gas Sensor-Based Applications
Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 500 r/min · Electrode · Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5b.
2022 · Metal-Organic Framework Assembled on Oriented Nanofiber Arrays for Field-Effect Transistor and Gas Sensor-Based Applications
Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 500 r/min · Electrode · SEM images of Au electrode evaporated on Cu3(HITP)2 NFAs of 300, 400 and 500 r/min and corresponding interelectrode fibre arrays.
2021 · Electrochemical Synthesis of Large Area Two-Dimensional Metal–Organic Framework Films on Copper Anodes
Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film · FET measured in N2 at room temperature; Vds = 5 V for transfer curve; channel length about 40 um, width about 2100 um.
2021 · Heterometallic Actinide-Containing Photoresponsive Metal-Organic Frameworks: Dynamic and Static Tuning of Electronic Properties
TCNQ@Zr-65% FET · Thin Film · Drain voltage 5 V; gate voltage sweep -10 to +5 V; dark and constant 365 nm UV irradiation; high-powered LED at 2 cm, 700 mA.
2021 · High-performance field-effect transistor glucose biosensors based on bimetallic Ni/Cu metal-organic frameworks
Ni/Cu-MOFs (7:1)-FET · Electrode · Measured with Keithley 4200-SCS and four-point probe station; PBS liquid gate with silver probe; output Vgs 0.1 to -0.1 V at Vds 0 to -0.2 V; transfer Vds = -0.10 V and Vgs -0.15 to 0.15 V.
2021 · High-performance field-effect transistor glucose biosensors based on bimetallic Ni/Cu metal-organic frameworks
GOD-GA-Ni/Cu-MOFs (7:1)-FET · Electrode · Maximum transconductance, carrier mobility, switching ratio and threshold voltage calculated for GOD-GA-Ni/Cu-MOFs (7:1)-FET.
2021 · High-performance field-effect transistor glucose biosensors based on bimetallic Ni/Cu metal-organic frameworks
GOD-GA-Ni/Cu-MOFs (7:1)-FET · Electrode · 5 uL PBS blank followed by 5 uL glucose solutions from 1 uM to 50 mM; Vgs = -0.10 V and Vds = -0.10 V.
2021 · Interfacial Synthesis of Layer-Oriented 2D Conjugated Metal-Organic Framework Films toward Directional Charge Transport
Cu2[PcCu-O8] local lateral h-BN/FET contact device · Thin Film · Contacts separated 100-500 nm, widths 8 um; representative 400 nm pair; measured in LakeShore Probe station CRX-VF at room temperature and 3e-5 mbar with two Keithley 2450 source meters
2021 · Metal-organic framework transistors for dopamine sensing
Cu3(HHTP)2-based FET on SiO2/Si · Thin Film · FET transfer characteristic used to extract mobility from the linear region.
2021 · Metal-organic framework transistors for dopamine sensing
Cu3(HHTP)2-based solution-gated MOF transistor · Thin Film · 0.1 M CaCl2 electrolyte; Ag/AgCl (sat. KCl) gate; two Keithley 2400 source meters.
2021 · MOF Nanosheet Reconstructed Two-Dimensional Bionic Nanochannel for Protonic Field-Effect Transistors
Cu-TCPP thin-film H+-FET device · Electrode · Gate-dependent current under pure Ar, Ar + 90% RH, and Ar + 90% RH + 5% H2
2021 · MOF Nanosheet Reconstructed Two-Dimensional Bionic Nanochannel for Protonic Field-Effect Transistors
Cu-TCPP thin-film H+-FET device · Electrode · Gate-modulated Cu-TCPP H+-FET measured under 90% RH and 5% H2; VGS varied from -10 to 10 V
2021 · Uniaxially Oriented Electrically Conductive Metal-Organic Framework Nanosheets Assembled at Air/Liquid Interfaces
HITP-Ni-NS 5-cycle FET device · Electrode · ID-VD curves recorded with VG = -10, -5, 0, 5 and 10 V over VD = -10 to 10 V.
2020 · ChemFET Sensor: nanorods of nickel-substituted Metal–Organic framework for detection of SO2
Ni3HHTP2 MOF ChemFET channel on Au/SiO2/Si · Electrode · Output: Vgs 1 to 5 V in 1 V steps; Vds swept 0-7 V. Transfer: Vds = 0.5 V.
2019 · Field effect transistor based on proton conductive metal organic framework (CuBTC)
Im@CuBTC drop-cast FET channel on Si/SiO2 with Cr/Au electrodes · Thin Film · FET device measured at 50 C in an anhydrous atmosphere; output characteristics and transfer at Vds = 2 V.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET prepared by scooping-up method · Thin Film · SEM and electrical-property comparison for alternative film-transfer/deposition methods.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 120 min · Thin Film · Dry FET transfer-characteristic comparison of 60 and 120 min devices.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 15 min · Thin Film · Dry FET measurement at room temperature; Vds = -1 V for transfer curves.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 30 min · Thin Film · Dry FET measurement at room temperature; Vds = -1 V for transfer curves.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 5 min · Thin Film · Keithley 4200 semiconductor parameter analyser with four-probe probe station at room temperature under dry condition; Si layer used as gate terminal; Vds = -1 V for transfer curves.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 60 min · Thin Film · Dry FET measurement at room temperature; Vds = -1 V for transfer curves.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 60 min · Thin Film · Gluconic acid solutions from 10^-6 to 10^-3 g/mL in PBS; 5 uL analyte added into solution well after rinsing three times with same concentration; low gate voltage of -0.1 V.
2019 · Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device
Ni-MOF-FET reacted for 60 min · Thin Film · PBS solution introduced into silicon-rubber well; silver wire gate inserted into 5 uL PBS; Figure 4a Ids-Vds and Figure 4b Ids-Vgs at Vds = -0.1 V.
2018 · Electron delocalization and charge mobility as a function of reduction in a metal-organic framework
Stepwise-reduced KxFe2(BDP)3 single-microcrystal FET devices · Single Crystal · Transfer current fitted using standard FET equations and cylindrical channel capacitance; VSD = 1 V in Fig. 5c.
2018 · Electron delocalization and charge mobility as a function of reduction in a metal-organic framework
Stepwise-reduced KxFe2(BDP)3 single-microcrystal FET devices · Single Crystal · Device 1 measured as a function of K insertion; source-drain IV curves before and after reduction.
2018 · Selective reduction of CO2 by conductive MOF nanosheets as an efficient co-catalyst under visible light illumination
Literature Ni3(HITP)2 FET device · Thin Film · Ni3(HITP)2 FET; details not provided in this paper.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
Bare SiO2 PTB7-Th OFET control · Electrode · Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
PTB7-Th OFET with one-cycle HKUST-1/SiO2 dielectric layer · Electrode · Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
PTB7-Th OFET with two-cycle HKUST-1/SiO2 dielectric layer · Electrode · Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
PTB7-Th OFET with three-cycle HKUST-1/SiO2 dielectric layer · Electrode · Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
PTB7-Th OFET with four-cycle HKUST-1/SiO2 dielectric layer · Electrode · Drain voltage set at -80 V. Saturation mobility calculated from transfer characteristics between gate voltage -80 and -30 V; threshold voltages from transfer-curve onsets.
2017 · Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
SURMOF HKUST-1/SiO2/Si one- to four-cycle thin-film series · Thin Film · 300 nm SiO2 dielectric with HKUST-1 films from one to four LPE cycles; authors calculated MOF-layer capacitance as Ci = epsilon0*kappa/d and overall capacitance as Ci=Ci1Ci2/(Ci1+Ci2).
2017 · Porous field-effect transistors based on a semiconductive metal-organic framework
Ni3(HITP)2-based porous FET device 1 · Electrode · Device characteristics measured in air or N2 at room temperature with Keithley 4200 SCS; mobility calculated in the linear regime using Ids = (W mu Ci/L)(Vgs - Vth)Vds with Ci = 11 nF/cm2, Vth = 1.1 V and Vds = -1 V.
2017 · Porous field-effect transistors based on a semiconductive metal-organic framework
Five additional Ni3(HITP)2-based porous FETs on the same SiO2/Si substrate · Electrode · Five additional devices on the same SiO2/Si substrate characterised at Vds = -1 V; mobility and on/off ratios compared by histograms.
2015 · A two-dimensional π-d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour
Cu-BHT bottom-gate bottom-contact FET · Electrode · Room-temperature Keithley 4200 SCS semiconductor parameter analyser; mobility extracted from IDS-VGS curves in the linear regime.
2014 · Bulk protonic conductivity in a cephalopod structural protein
Wild-type reflectin A1 three-terminal protonic transistor · Thin Film · IDS versus VDS measured while modulating VGS from -10 to +10 V; RH 90%; VDS up to 1.5 V.
2010 · Highly conducting two-dimensional copper(i) 4-hydroxythiophenolate network
drop-cast CuAT thin film on bottom-contact FET · Thin Film · IDS versus VDS at different VGS and IDS versus VGS at different VDS; non-saturating device, mobility extracted in the linear regime.
2010 · Highly conducting two-dimensional copper(i) 4-hydroxythiophenolate network
drop-cast CuAT thin film on bottom-contact FET · Thin Film · SEM image of bottom-contact FET fabricated with drop-cast CuAT film.
2010 · Highly conducting two-dimensional copper(i) 4-hydroxythiophenolate network
drop-cast CuHT crystallites on bottom-contact FET · Thin Film · IDS versus VDS at VGS = +6 to -6 V; drop-cast platy CuHT crystallites; measured using Keithley K4200 in nitrogen glove box.
2010 · Highly conducting two-dimensional copper(i) 4-hydroxythiophenolate network
drop-cast CuHT crystallites on bottom-contact FET · Thin Film · Top-view SEM of CuHT platy crystallites on bottom-contact FET.
No mapped measurement matches these filters.
These are the exact source-preserving method strings consolidated by this technique group.
| Raw method label | Mapped measurements |
|---|---|
| BG-TC TFT transfer/output characterization | 15 |
| Agilent 4155C semiconductor parameter analyser; top-contact bottom-gate OFET | 5 |
| field-effect transistor transfer measurement | 4 |
| Field-effect transistor Ids-Vds and Ids-Vgs measurements | 4 |
| solid-gated FET transfer/output curves; mobility calculated from linear-region output curves | 4 |
| liquid-gated FET Hg2+ sensing by drain-current change | 4 |
| FET glucose sensing by monitoring drain current | 3 |
| Field-effect transistor output and transfer characteristics | 2 |
| OFET transfer characteristics | 2 |
| Bottom-gate bottom-contact field-effect transistor characterisation | 1 |
| Field-effect transistor transfer characteristics for device-to-device reproducibility | 1 |
| Single-crystal field-effect transistor transfer measurements | 1 |
| Two-point DC conductivity on single-crystal FET devices | 1 |
| Thin-film field-effect transistor saturation mobility | 1 |
| Top-gated FET transfer and output characteristics | 1 |
| Field-effect transistor mobility cited from prior literature | 1 |
| Local lateral two-probe measurement in FET-style h-BN device | 1 |
| Back-gated FET transfer and output characteristics | 1 |
| OFET/OTFT mobility test of ligand thin films | 1 |
| field-effect transistor output curves | 1 |
| SEM imaging of FET electrode/fibre arrays | 1 |
| Field-effect transistor output and transfer curves | 1 |
| Chem-FET CO sensing | 1 |
| field-effect transistor transfer curve | 1 |
| solution-gated transistor output and transfer curves | 1 |
| FET output and transfer characteristics using Keithley 4200 SCS semiconductor parameter analyser | 1 |
| Capacitance calculation for MOF-based OFET mobility analysis | 1 |
| Three-terminal protonic transistor transfer/output characteristics | 1 |
| FET output and transfer characteristics (Ids-Vds and Ids-Vgs) | 1 |
| Comparative SEM and FET electrical measurements for scooping-up and drop-casting controls | 1 |
| Field-effect transistor Ids-Vgs measurement | 1 |
| Liquid-gated FET Ids-Vds and Ids-Vgs measurements in PBS | 1 |
| Liquid-gated FET response to gluconic acid | 1 |
| Atmosphere-control H+-FET transfer measurement without H2 | 1 |
| H+-FET output and transfer curves | 1 |
| SI Table S1 comparative TFT performance summary | 1 |
| Long-term OFET transfer and mobility stability | 1 |
| Carrier mobility extraction from OFET transfer curves | 1 |
| OFET transfer curves for SI rpm series | 1 |
| OFET DES vapour sensing | 1 |
| liquid-gated FET output and transfer curves | 1 |
| liquid-gated FET transfer analysis | 1 |
| chronoamperometric glucose concentration test with FET readout | 1 |
| selectivity test by liquid-gated FET current response | 1 |
| EG-FET output/transfer characterisation using commercial p-channel MOSFET | 1 |
| EG-FET transfer characteristics after MBS and aptamer functionalisation | 1 |
| EG-FET performance comparison versus solid-phase conversion time | 1 |
| label-free EG-FET cortisol sensing in 0.01X PBS | 1 |
| EG-FET pH sensing via threshold-voltage shift | 1 |
| scrambled-aptamer EG-FET cortisol control | 1 |
| Field effect transistor output and transfer characteristics using SPA Keithley 4200A | 1 |
| MOF-based FET transfer characteristics | 1 |
| Bottom-contact FET output and transfer characteristics | 1 |
| Bottom-contact FET output characteristics | 1 |
| SEM imaging of CuAT FET film | 1 |
| SEM imaging of FET active layer | 1 |
| OFET transfer and output curves using semiconductor parameter analyser | 1 |
| Optoelectronic transistor transfer curves under 365 nm laser irradiation | 1 |
| FET I-V and liquid-gate transfer curves using Keysight B1500A | 1 |
| control FET glucose sensing | 1 |
| selectivity test by FET drain-current response | 1 |
| long-term stability and reusability FET sensing | 1 |
| field-effect transistor transfer and output characteristics, Agilent 1500A | 1 |
| OFET transfer/output and capacitance measurements; mobility extracted from saturation-region equation | 1 |