Electrical Transport — A two-dimensional π-d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour

4 measurement groups · 14 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Bottom-gate bottom-contact field-effect transistor characterisation

Field-effect transistor measurements

Cu-BHT bottom-gate bottom-contact FET · Electrode

Room-temperature Keithley 4200 SCS semiconductor parameter analyser; mobility extracted from IDS-VGS curves in the linear regime.

Temperature: 300
Geometry: n-type highly doped Si/300 nm SiO2 bottom gate; 30 nm source/drain electrodes; channel length 5-50 um
Context: pristine Cu-BHT channel
Measurement source: main p.5 and p.7 · Characterization of Cu-BHT-based FET / Fabrication and characterization of FETs · Fig. 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Best electron field-effect mobilityMarked as a best value within this paper	116 cm2 V-1 s-1	—	—	Text Exact Reported	main p.1 and p.5 · Abstract / Characterization of Cu-BHT-based FET · Fig. 6d
FET on/off current ratio	Ion/Ioff ratio of 10	—	—	Text Exact Reported	main p.5 · Characterization of Cu-BHT-based FET · Fig. 6
Best hole field-effect mobilityMarked as a best value within this paper	99 cm2 V-1 s-1	—	—	Text Exact Reported	main p.1 and p.5 · Abstract / Characterization of Cu-BHT-based FET · Fig. 6c
Routine field-effect mobility level	Both high hole and electron mobility over 10 cm2 V-1 s-1 can be routinely obtained.	—	—	Text Approximate	main p.5 · Characterization of Cu-BHT-based FET · Fig. 6

Standard four-probe electrical conductivity

Electrical conductivity

General Cu-BHT thin-film samples · Thin Film

Cu-BHT films with thickness 15-500 nm measured by four-probe method.

Temperature: 300
Geometry: Four parallel gold electrodes on insulated substrate
Context: pristine Cu-BHT thin films
Measurement source: main p.4 · Electrical conductivity

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Room-temperature conductivity range	750 to 1,580 S cm-1	—	—	Text Range	main p.4 · Electrical conductivity

Four-point probe sheet resistance

Electrical conductivity

60 nm Cu-BHT film · Thin Film

ST2263 Double Testing Digital Four-probe Tester; constant current 100 uA at room temperature; 11 x 11 mm2 glass substrate; in-line probes with 1 mm spacing and 3 N force.

Temperature: room temperature
Geometry: 60 nm film on 11 x 11 mm2 glass substrate
Context: pristine Cu-BHT thin film
Measurement source: main p.5 and p.6 · Optical properties / Electrical property measurement · Fig. 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Sheet resistance of 60 nm film	200 Ohm per square	—	—	Text Rounded Reported	main p.5 · Electrical conductivity / optical properties · Fig. 5

Four-probe temperature-dependent conductivity in PPMS

Electrical conductivity

Cu-BHT film for temperature-dependent four-probe conductivity · Thin Film

Constant current 1 uA; PPMS sealed chamber swept from 300 K to 2 K with temperature deviation <0.01 K; Ohmic I-V checked.

Temperature: 2-300
Atmosphere: sealed PPMS chamber
Geometry: Four parallel gold electrodes on quartz
Context: pristine Cu-BHT thin film
Measurement source: main p.4 and p.6 · Electrical conductivity / Electrical property measurement · Fig. 4; Supplementary Fig. 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Activation energy at 300 K	2.06 meV at 300 K	—	—	Text Exact Reported	main p.4 · Electrical conductivity · Fig. 4b
Activation energy at 40 K	0.12 meV at 40 K	—	—	Text Exact Reported	main p.4 · Electrical conductivity · Fig. 4b
Conductivity activation energy range	0.12 meV at 40 K to 2.06 meV at 300 K	—	—	Text Range	main p.4 · Electrical conductivity · Fig. 4b
Best room-temperature electrical conductivityMarked as a best value within this paper	1,580 S cm-1 at 300 K	—	—	Text Exact Reported	main p.1 and p.4 · Abstract / Electrical conductivity · Fig. 4a
Electrical conductivity at 2 K	1,360 S cm-1 at 2 K	—	—	Text Exact Reported	main p.4 · Electrical conductivity · Fig. 4a
Ohmic I-V check	I-V curve recorded to ensure Ohmic measurement region.	—	—	Caption Qualitative	main p.4 · Figure 4 caption · Supplementary Fig. 6
Conductivity ratio sigma(300 K)/sigma(2 K)	1.16	—	—	Text Exact Reported	main p.4 · Electrical conductivity · Fig. 4a
3D variable-range hopping fit window	log10 sigma versus T^-0.25 over 40-250 K fitted to 3D variable range hopping model.	—	—	Text Qualitative	main p.4 · Electrical conductivity · Fig. 4b inset