Huang X., Sheng P., Tu Z. et al. · Nature Communications · 2015 · 7408
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Cu-BHT bottom-gate bottom-contact FETs display ambipolar transport with balanced high hole and electron mobilities.
Caveat: On/off ratio is low (10), consistent with gapless/highly conducting channels.
main p.5 · Characterization of Cu-BHT-based FET · Fig. 6 · Linked to 3 structured results
The reported room-temperature conductivity up to 1,580 S cm-1 was claimed to be the highest value then reported for coordination polymers.
Caveat: The comparative claim is as reported in 2015 and was not independently rebenchmarked.
main p.1 and p.4 · Abstract / Discussion · Fig. 4 · Linked to 2 structured results
A 60 nm Cu-BHT film combines 78.6% average visible transmittance with 200 ohm sq-1 sheet resistance, supporting transparent-electrode potential.
Caveat: Only a single 60 nm film value is reported in the main text for this application.
main p.5 · Electrical conductivity / optical properties · Fig. 5 · Linked to 2 structured results
The reported transport behaviour is representative of bulk multicrystalline films rather than intrinsic single-crystal or monolayer Cu-BHT.
main p.6 · Discussion · Linked to 3 structured results
Cu-BHT films are assigned as a 2D copper bis(dithiolene) coordination polymer with formula [Cu3(C6S6)]n.
Caveat: No CIF is provided in the assigned document set; the structure is proposed from diffraction, composition and modelling.
main p.4 · Component analysis · Supplementary Table 2 · Linked to 5 structured results
Among theoretical single-layer topologies, crystal (c) is considered the most likely because it has the lowest energy and lattice/symmetry consistent with GIXRD.
Caveat: Computational/topological inference rather than direct single-layer crystal structure measurement.
SI p.6 · Supplementary Note 1 · Supplementary Table 3 · Linked to 3 structured results
The authors propose that hopping between nanosheets is the critical step in electrical conduction through the Cu-BHT film.
Caveat: Mechanistic inference from 3D variable-range hopping fit and morphology; defects/domain boundaries could not be ruled out.
main p.4 · Electrical conductivity · Fig. 4b · Linked to 3 structured results
Cu-BHT films show metallic/highly conducting behaviour supported by weak temperature dependence, small thermopower, UPS Fermi edge and calculated band crossings.
Caveat: Transport is measured on multicrystalline multilayer films, so intrinsic monolayer behaviour is not isolated.
main p.5-6 · Electrical conductivity / XPS and UPS characterizations · Fig. 4; Fig. 7 · Linked to 5 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Cu-BHT copper bis(dithiolene) two-dimensional coordination polymerBrowse family: Cu₃(C₆S₆) / Cu–BHT | [Cu3(C6S6)]n; also written [Cu3C6S6]nCu atoms coordinated by four sulfur atoms in square-planar CuS4 environments; Cu(II) precursor reduced toward Cu(I)-like Cu 2p binding energy during formation. · Benzenehexathiol (BHT, C6H6S6 before deprotonation; C6S6 in the framework) | 2D · PristinePlanar pi-d conjugated dense 2D Cu-S network; stacked nanosheets with AA/AB stacking mixture possible; hexagonal in-plane lattice assigned by GIXRD/PXRD and DFT. | main p.2-3 · Introduction/Structural resolution · Fig. 2c |
| Cu3C6S6 computational model structuresBrowse family: Cu₃(C₆S₆) / Cu–BHT | Cu3C6S6Model Cu-S coordination networks with candidate AA, AB and single-layer structures. · BHT-derived C6S6 units | 2D · Model SystemDFT/PBE-D2 and CALYPSO-derived candidate structures used to rationalise GIXRD/PXRD and electronic bands. | SI p.6 · Supplementary Note 1 · Supplementary Fig. 9; Supplementary Table 3 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| 200 nm Cu-BHT film cross-section sampleresearch_0006__mat__cu_bht_2d_cp | Thin Film · Target Sample · Pristine Framework | Transferred for SEM cross-section imaging; Pt-coated by several nanometres before SEM.Conductive silicon for SEM after transfer and Pt coating. · 200 nm | main p.2-3 · Synthesis of Cu-BHT films · Fig. 1e |
| 60 nm Cu-BHT filmresearch_0006__mat__cu_bht_2d_cp | Thin Film · Target Sample · Pristine Framework | Transferred thin film; lower half removed from glass optical sample for reference in Fig. 5.Glass/quartz for optical and sheet resistance measurements; substrate also used for GIXRD in structural characterisation. · 60 nm | main p.3 and p.5 · Structural resolution / Optical properties · Fig. 2; Fig. 5 |
| Cu-BHT bottom-gate bottom-contact FETresearch_0006__mat__cu_bht_2d_cp | Electrode · Target Sample · Pristine Framework | Cu-BHT film deposited with smooth upside contacting dielectric/electrodes; rinsed with deionized water and methylene chloride; dried overnight in glove box with H2O <0.1 ppm.n-type highly doped Si with 300 nm SiO2; source/drain electrodes 30 nm; bottom-gate bottom-contact device. · Film thickness not specified for FET device. | main p.5 and p.7 · Characterization of Cu-BHT-based FET / Fabrication and characterization of FETs · Fig. 6 |
| General Cu-BHT thin-film samplesresearch_0006__mat__cu_bht_2d_cp | Thin Film · Target Sample · Pristine Framework | Liquid-liquid interfacial film transferred to substrates; as-prepared film cleaned with ethanol and acetone; measurement-specific rinses/drying used.Transferred to quartz, glass slides, Si/SiO2 or conductive silicon depending on measurement. · Conductivity series: 15-500 nm; AFM morphology series: 20-140 nm; films larger than 1 cm2 possible. | main p.2 · Synthesis of Cu-BHT films · Fig. 1 |
| AA-stacked Cu3C6S6 modelresearch_0006__mat__cu_bht_model_structures | Model · Model System · Model | DFT/PBE-D2 and PBE/G0W0 calculations.Model interlayer separation 3.38 A for PES scan; optimised c=3.539 A in SI Table 1. | SI p.5 · Supplementary Table 1 · Supplementary Fig. 3; Supplementary Table 1 |
| AB-stacked Cu3C6S6 modelresearch_0006__mat__cu_bht_model_structures | Model · Model System · Model | DFT/PBE-D2 and PBE calculations.Optimised c=6.82 A in SI Table 1. | SI p.5 · Supplementary Table 1 · Supplementary Table 1 |
| Single-layer Cu3C6S6 candidate structuresresearch_0006__mat__cu_bht_model_structures | Model · Model System · Model | CALYPSO structure search and VASP structural optimisation; PBE/LDA/LDA+U band calculations.Single-layer model. | SI p.6 · Supplementary Note 1 · Supplementary Fig. 9; Supplementary Table 3 |
| Cu-BHT film for temperature-dependent four-probe conductivityresearch_0006__mat__cu_bht_2d_cp | Thin Film · Target Sample · Pristine Framework | Measured in PPMS sealed chamber from 300 K to 2 K with constant current 1 uA.Insulated quartz substrate with four parallel gold electrodes. · Text reports 400 nm for the sample with sigma(300 K)=1580 S cm-1; Fig. 4 caption also refers to a 150-nm film. | main p.4 · Electrical conductivity · Fig. 4 |