Electrical Transport — Metal-Organic Framework Assembled on Oriented Nanofiber Arrays for Field-Effect Transistor and Gas Sensor-Based Applications

5 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Al/PMMA:PDMS-PCDA/Cu/Al flat capacitor dielectric film · Thin Film

Al/PMMA:PDMS-PCDA/Cu/Al capacitor; capacitance and permittivity selected at 30 kHz for FET mobility calculation.

Temperature: 296.65
Geometry: Al/PMMA:PDMS-PCDA/Cu/Al flat capacitor
Context: Composite dielectric layer supporting Cu3(HITP)2 NFA FETs.
Measurement source: S2 and S8 · Section S1. Materials and Methods · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cgate used for FET mobility calculation	11.2 nF/cm2 at 30 kHz	—	—	Text Exact Reported	S2 · Field Effect Transistors measurements · Figure S5
relative permittivity near 30 kHz	approximately 5.4 at 30 kHz	—	visual estimate from Figure S5a	Figure Axis Approximate	S8 · Section S3. Characterization · Figure S5a

Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 300 r/min · Electrode

Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5d.

Geometry: Au top-contact electrode arrays on highly phosphorus-doped (n++) Si substrate.
Context: Composite NFA active layer.
Measurement source: 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5d; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
hole mobility at 300 r/min	4.23 cm2/(V s)	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
Ion/Ioff at 300 r/min	4.8 x 10^3	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
threshold voltage at 300 r/min	3.4 V	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1

Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 400 r/min · Electrode

Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5c.

Geometry: Au top-contact electrode arrays on highly phosphorus-doped (n++) Si substrate.
Context: Composite NFA active layer.
Measurement source: 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5c; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
hole mobility at 400 r/min	4.41 cm2/(V s)	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
Ion/Ioff at 400 r/min	7.9 x 10^3	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
threshold voltage at 400 r/min	3.05 V	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1

Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 500 r/min · Electrode

Top-contact Cu3(HITP)2 NFA FET; Vg swept from -10 V to 10 V; Vds = 0.8 V shown in Figure 5b.

Geometry: Au top-contact electrode arrays on highly phosphorus-doped (n++) Si substrate.
Context: Composite NFA active layer.
Measurement source: 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5b; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
hole mobility at 500 r/minMarked as a best value within this paper	5.09 cm2/(V s)	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
Ion/Ioff at 500 r/minMarked as a best value within this paper	9.6 x 10^3	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1
threshold voltage at 500 r/minMarked as a best value within this paper	2.9 V	—	—	Table Exact Reported	10 · 3.1 Field-Effect Transistor Measurements · Table 1

Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 500 r/min · Electrode

V-I curves measured for Cu3(HITP)2 NFAs (500 r/min) along electrode pairs A-B, C-D, B-C and D-A; IS = 0.05 mA in Figure S6.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
directional V-I behaviour	linear V-I curve along Cu3(HITP)2 NFA direction; nonlinear perpendicular to NFAs	—	—	Text Qualitative	10 · 3.1 Field-Effect Transistor Measurements · Figure S6 referenced