Mu J., Zhong X., Dai W. et al. · Molecules · 2022 · 2131
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Cu3(HITP)2 NFAs are more hydrophobic than bare silicon, which the authors argue broadens device operating conditions.
Caveat: No long-term humidity-stability data are reported in the provided main text.
10 · 3.1 Field-Effect Transistor Measurements · Figure 5e · Linked to 2 structured results
Cu3(HITP)2 grows with good crystallinity at the fibre edge, and AB-direction pi-pi stacking along the long axis of micro/nanowires is proposed to aid carrier transport.
Caveat: Directional V-I curves are shown in SI Figure S6, but numerical point values are not tabulated.
8 · Results and Discussion · Figure 4 · Linked to 4 structured results
Polar coordination sites in PDMS-PCDA/Cu provide stable binding sites for copper ions and precursor conditions for ordered in situ Cu3(HITP)2 growth.
Caveat: The authors provide chemical and morphological evidence; exact HATP/CuSO4 concentrations for LBL growth are not specified.
5-6 · Results and Discussion · Figures 2-3 · Linked to 4 structured results
Higher electrospinning roller speed gives more highly oriented Cu3(HITP)2 NFAs, shortening the carrier-transfer path and increasing FET mobility and Ion/Ioff.
Caveat: Orientation metrics are not numerically reported in the main text.
10-12 · 3.1 Field-Effect Transistor Measurements; Conclusions · Table 1 · Linked to 4 structured results
The Cu3(HITP)2 NFA sensor behaves as a p-type semiconductor at room temperature; reducing gases supply electrons, reduce hole carrier flow and increase resistance.
Caveat: Mechanistic explanation is inferred by authors from resistance changes; no separate gas adsorption or in situ spectroscopic proof is reported in the main text.
11 · 3.2 Chemiresistive Gas Sensors · Figure 6 · Linked to 4 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Cu3(HITP)2Browse family: Cu₃(HITP)₂ / Cu–HITP | Cu3(HITP)2Cu centres; XPS of the NFA sample indicates mixed Cu(I)/Cu(II) features after redox-active HITP coordination. · HITP, 2,3,6,7,10,11-hexaiminotriphenylene | 2D · PristineHexagonal layered 2D framework with slipped-parallel stacking; simulated unit cell a = b = 22.02 A, c = 6.6 A, alpha = beta = 90 degrees, gamma = 120 degrees. | 6 · Results and Discussion · Figure 4 |
| highly phosphorus-doped silicon substrate | n++ Si | unknown · UnknownHighly phosphorus-doped silicon device substrate. | 9 · Field-Effect Transistor Measurements · Figure 5 |
| PDMS-PCDA/Cu nanofibre array template | PDMS-PCDA/CuCu ions coordinated by pyridine N and carbonyl sites in the cross-linked oligomer · Amino-terminated PDMS and 2,6-pyridinedicarboxamide-derived PCDA units | unknown · CompositeCross-linked coordination oligomer fibre array with uniformly dispersed C, N and Cu. | 5-6 · Results and Discussion · Figure 2 |
| PDMS-PCDA/Cu3(HITP)2 nanofibre arraysBrowse family: Cu₃(HITP)₂ / Cu–HITP | Cu3(HITP)2 grown on PDMS-PCDA/Cu NFAsCu nodes in Cu3(HITP)2 plus Cu-coordinated PDMS-PCDA template · HITP framework linker on PDMS-PCDA/Cu fibre arrays | 2D · CompositeDense Cu3(HITP)2 nanosheets grown in situ on oriented polymer/Cu nanofibres; XRD consistent with simulated Cu3(HITP)2 and TEM shows 1.9 nm (100) lattice spacing. | 6-8 · Results and Discussion · Figures 3-4 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 300 r/minresearch_0098__mat__mat_pdms_pcda_cu3_hitp2_nfa | Electrode · Target Sample · Composite | PDMS-PCDA/Cu NFAs spun at 300 r/min, then 20 Cu3(HITP)2 LBL growth cycles.(n++) silicon wafer with Au top-contact electrodes for FET measurements | 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5d; Table 1 |
| Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 400 r/minresearch_0098__mat__mat_pdms_pcda_cu3_hitp2_nfa | Electrode · Target Sample · Composite | PDMS-PCDA/Cu NFAs spun at 400 r/min, then 20 Cu3(HITP)2 LBL growth cycles.(n++) silicon wafer with Au top-contact electrodes for FET measurements | 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5c; Table 1 |
| Cu3(HITP)2 NFAs on PDMS-PCDA/Cu, 500 r/minresearch_0098__mat__mat_pdms_pcda_cu3_hitp2_nfa | Electrode · Target Sample · Composite | PDMS-PCDA/Cu NFAs spun at 500 r/min, then 20 Cu3(HITP)2 LBL growth cycles.(n++) silicon wafer with Au top-contact electrodes for FET measurements | 9-10 · 3.1 Field-Effect Transistor Measurements · Figure 5b; Table 1 |
| Cu3(HITP)2 NFA chemiresistor sensorresearch_0098__mat__mat_pdms_pcda_cu3_hitp2_nfa | Electrode · Target Sample · Composite | Cu3(HITP)2 fibre arrays used as gas sensing units; rotation speed not stated for Figure 6.silver-paste electrodes with 50 micrometre nickel wire conducting leads; quartz chamber sensing setup | S2 · Section S1. Materials and Methods · Figure S7 |
| Cu3(HITP)2 powderresearch_0098__mat__mat_cu3_hitp2 | Powder · Pristine Control · Pristine Framework | Powder comparator for XRD; synthesis details not present in the main text. | 6 · Results and Discussion · Figure 4b |
| (n++) Si contact-angle controlresearch_0098__mat__mat_npp_si | Thin Film · Pristine Control · Unknown | Bare silicon substrate used for water contact-angle comparison.(n++) silicon | 10 · 3.1 Field-Effect Transistor Measurements · Figure 5e |
| oriented PDMS-PCDA/Cu NFAsresearch_0098__mat__mat_pdms_pcda_cu | Thin Film · Composite Component · Composite | Electrospun fibre arrays collected on roller and substrate at 300, 400, or 500 r/min.(n++) silicon wafer | 3 · 2.2 Preparation of the Oriented PDMS-PCDA/Cu NFAs |
| Al/PMMA:PDMS-PCDA/Cu/Al flat capacitor dielectric filmresearch_0098__mat__mat_pdms_pcda_cu | Thin Film · Composite Component · Composite | Composite dielectric film containing 20% PMMA and 80% PDMS-PCDA/Cu used to determine Cgate for FET mobility calculation.Al electrodes in flat capacitor geometry | S2 · Section S1. Materials and Methods · Figure S5 |