Electrical Transport — Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device

7 measurement groups · 26 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Comparative SEM and FET electrical measurements for scooping-up and drop-casting controls

Scanning electron microscopy Field-effect transistor measurements

Ni-MOF-FET prepared by scooping-up method · Thin Film

SEM and electrical-property comparison for alternative film-transfer/deposition methods.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Au-patterned Si/SiO2 FET channel
Context: pristine Ni-MOF control films
Measurement source: p007 / SI p.S-7 · Additional Figures · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
drop-casting control morphology	nanosheets stacked into a mass lacking film uniformity and continuity	—	—	Text Qualitative	p002 / SI p.S-2 · Drop-casting method · Figure S5d-f
scooping-up control morphology	MOF film with cracks; electrical properties were not very good	—	—	Text Qualitative	p002 / SI p.S-2 · Scooping-up method · Figure S5a-c

Field-effect transistor Ids-Vgs measurement

Field-effect transistor measurements

Ni-MOF-FET reacted for 120 min · Thin Film

Dry FET transfer-characteristic comparison of 60 and 120 min devices.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Au-patterned Si/SiO2 FET channel
Context: pristine Ni-MOF FET after overlong reaction
Measurement source: p009 / SI p.S-9 · Additional Figures · Figure S8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
on/off current ratio	1.17 x 10^3	—	—	Table Exact Reported	p004 / article p.35938 · Result and Discussion · Table 1
charge mobility	33.5 cm2 V-1 s-1	—	—	Table Exact Reported	p004 / article p.35938 · Result and Discussion · Table 1 and Figure S8
subthreshold swing	1.4 V/decade	—	—	Table Exact Reported	p004 / article p.35938 · Result and Discussion · Table 1
threshold voltage	-9 V	—	—	Table Exact Reported	p003-p004 / article pp.35937-35938 · Table 1 · Table 1
threshold voltage from SI caption	-10 V	—	—	Caption Exact Reported	p009 / SI p.S-9 · Additional Figures · Figure S8

Field-effect transistor Ids-Vds and Ids-Vgs measurements

Field-effect transistor measurements

Ni-MOF-FET reacted for 15 min · Thin Film

Dry FET measurement at room temperature; Vds = -1 V for transfer curves.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Channel length 50 um, width 1000 um, Si/SiO2 gate dielectric
Context: pristine Ni-MOF FET
Measurement source: p002-p003 / article pp.35936-35937 · Result and Discussion · Figure 2 and Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
on/off current ratio	1.21 x 10^3	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
charge mobility	38.4 cm2 V-1 s-1	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
subthreshold swing	2.3 V/decade	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
threshold voltage	-23 V	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1

Field-effect transistor Ids-Vds and Ids-Vgs measurements

Field-effect transistor measurements

Ni-MOF-FET reacted for 30 min · Thin Film

Dry FET measurement at room temperature; Vds = -1 V for transfer curves.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Channel length 50 um, width 1000 um, Si/SiO2 gate dielectric
Context: pristine Ni-MOF FET
Measurement source: p002-p003 / article pp.35936-35937 · Result and Discussion · Figure 2 and Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
on/off current ratio	1.21 x 10^3	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
charge mobility	38.8 cm2 V-1 s-1	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
subthreshold swing	2.0 V/decade	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
threshold voltage	-19 V	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1

Field-effect transistor Ids-Vds and Ids-Vgs measurements

Field-effect transistor measurements

Ni-MOF-FET reacted for 5 min · Thin Film

Keithley 4200 semiconductor parameter analyser with four-probe probe station at room temperature under dry condition; Si layer used as gate terminal; Vds = -1 V for transfer curves.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Channel length 50 um, width 1000 um, Si/SiO2 gate dielectric with Ci approximately 11 nF/cm2
Context: pristine Ni-MOF FET
Measurement source: p003 / SI p.S-3 · Electrical measurement and Calculation · Figure S7a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
on/off current ratio	2.89 x 10^2	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
charge mobility	6.2 cm2 V-1 s-1	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
subthreshold swing	2.7 V/decade	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1
threshold voltage	-19 V	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1

Field-effect transistor Ids-Vds and Ids-Vgs measurements

Field-effect transistor measurements

Ni-MOF-FET reacted for 60 min · Thin Film

Dry FET measurement at room temperature; Vds = -1 V for transfer curves.

Temperature: room temperature
Atmosphere: dry condition
Geometry: Channel length 50 um, width 1000 um, Si/SiO2 gate dielectric
Context: pristine Ni-MOF FET
Measurement source: p002-p004 / article pp.35936-35938 · Result and Discussion · Figure 2 and Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dry transfer behaviour	FET based on Ni-MOF films exhibited bipolar behavior	—	—	Text Qualitative	p004 / article p.35938 · Result and Discussion · Figure 2e-h
on/off current ratioMarked as a best value within this paper	2.29 x 10^3	—	—	Table Exact Reported	p004 / article p.35938 · Result and Discussion · Table 1
charge mobilityMarked as a best value within this paper	45.4 cm2 V-1 s-1	—	—	Table Exact Reported	p003-p004 / article pp.35937-35938 · Table 1 and Result and Discussion · Table 1
Ids-Vds output behaviour	nearly linear relationship between Ids and Vds, indicating good Ohmic contact	—	—	Text Qualitative	p004 / article p.35938 · Result and Discussion · Figure 2a-d
subthreshold swingMarked as a best value within this paper	1.3 V/decade	—	—	Table Exact Reported	p004 / article p.35938 · Result and Discussion · Table 1
threshold voltageMarked as a best value within this paper	-2 V	—	—	Table Exact Reported	p003 / article p.35937 · Table 1 · Table 1

Liquid-gated FET Ids-Vds and Ids-Vgs measurements in PBS

Field-effect transistor measurements

Ni-MOF-FET reacted for 60 min · Thin Film

PBS solution introduced into silicon-rubber well; silver wire gate inserted into 5 uL PBS; Figure 4a Ids-Vds and Figure 4b Ids-Vgs at Vds = -0.1 V.

Temperature: room temperature
Atmosphere: PBS solution
Geometry: Liquid-gated FET with Ag reference/gate wire and solution well over Ni-MOF channel
Context: pristine Ni-MOF FET used as liquid-gated device
Measurement source: p003 / SI p.S-3 · Electrical measurement · Figure 4a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
field-effect performance in PBS	Ni-MOF-FET still displayed field effect performance and remained stable under PBS solution	—	—	Text Qualitative	p004 / article p.35938 · Result and Discussion · Figure 4a,b