Wang B., Luo Y., Liu B. et al. · ACS Applied Materials and Interfaces · 2019 · 35935-35940
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The 60 min Ni-MOF-FET operated as a liquid-gated device in PBS and responded to gluconic acid from 10^-6 to 10^-3 g/mL.
Caveat: The paper reports response over a concentration range but does not provide a calibrated detection limit, selectivity panel, or error bars in the extracted text.
p004-p005 / article pp.35938-35939 · Result and Discussion · Figure 4 · Linked to 4 structured results
Increasing reaction time improved Ni-MOF film tightness and FET metrics up to 60 min, while 120 min lowered performance because of Au electrode damage.
Caveat: Thickness did not scale linearly with reaction time; one 120 min threshold differs between Table 1 and SI Figure S8 caption.
p003-p004 / article pp.35937-35938 · Result and Discussion · Table 1 and Figure S8 · Linked to 5 structured results
Au electrodes promoted assembly/densification of the Ni-MOF film on the substrate.
Caveat: The morphology was said not to differ much, but density/thickness was lower without Au.
p004 / article p.35938 · Result and Discussion · Figure S4 · Linked to 2 structured results
The solid-liquid interface in situ growth method produced large-area, dense, uniform Ni3(HITP)2 films directly on FET substrates, avoiding damaging film transfer.
Caveat: Film size beyond the reported 2.5 x 2 cm wafer was not demonstrated.
p001-p002 / article pp.35935-35936 · Abstract and Introduction · Linked to 3 structured results
Under negative gate voltage, positive gluconic-acid species reduce hole accumulation in the Ni-MOF channel, causing a negative shift in Ids-Vgs.
Caveat: Mechanistic interpretation is proposed from device behaviour and schematic illustration rather than direct molecular binding quantification.
p005 / article p.35939 · Result and Discussion · Figure 3b · Linked to 2 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Ni-MOF / Ni3(HITP)2Browse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2Ni centres, described as Ni-N4 active sites in a two-dimensional framework · HITP derived from 2,3,6,7,10,11-hexaaminotriphenylene hexahydrochloride (HATP*6HCl) | 2D · PristineTwo-dimensional stacked-sheet conductive MOF; PXRD peaks at 2theta = 4.7, 9.5, 12.5, and 16.5 degrees matched previously reported Ni-MOF structural features. | p001 / article p.35935 · Abstract and Introduction |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Ni-MOF-FET prepared by drop-casting methodresearch_0230__mat__ni3_hitp2 | Electrode · Pristine Control · Pristine Framework | Ni-MOF product reacted for 120 min, centrifuged and dried, dispersed in ethanol, drop-cast onto the FET channel, and baked at 100 C.FET channel on Au-patterned Si/SiO2 wafer | p002 / SI p.S-2 · Drop-casting method · Figure S5d-f |
| Ni-MOF-FET reacted for 120 minresearch_0230__mat__ni3_hitp2 | Thin Film · Target Sample · Pristine Framework | Longer in situ reaction using the same FET growth procedure; Au electrode structure was reported to be damaged after 120 min.Si/SiO2 wafer with Ti/Au source-drain electrodes · approximately 703 nm from Figure S4e annotation | p004 / article p.35938 · Result and Discussion · Table 1 and Figure S8 |
| Ni-MOF-FET reacted for 15 minresearch_0230__mat__ni3_hitp2 | Thin Film · Target Sample · Pristine Framework | In situ grown Ni3(HITP)2 film on pre-patterned FET channel after 15 min solid-liquid interface reaction; washed with DI water and ethanol and dried at 100 C under vacuum.Si (500 nm)/SiO2 (300 nm) wafer with 10 nm Ti / 100 nm Au source-drain electrodes · approximately 316 nm from Figure 1j annotation | p002 / article p.35936 · Figure captions · Figure 1f,j and Table 1 |
| Ni-MOF-FET reacted for 30 minresearch_0230__mat__ni3_hitp2 | Thin Film · Target Sample · Pristine Framework | In situ grown Ni3(HITP)2 film on pre-patterned FET channel after 30 min solid-liquid interface reaction; washed with DI water and ethanol and dried at 100 C under vacuum.Si (500 nm)/SiO2 (300 nm) wafer with 10 nm Ti / 100 nm Au source-drain electrodes · approximately 392 nm from Figure 1k annotation | p002 / article p.35936 · Figure captions · Figure 1g,k and Table 1 |
| Ni-MOF-FET reacted for 5 minresearch_0230__mat__ni3_hitp2 | Thin Film · Target Sample · Pristine Framework | In situ grown Ni3(HITP)2 film on pre-patterned FET channel after 5 min solid-liquid interface reaction; washed with DI water and ethanol and dried at 100 C under vacuum.Si (500 nm)/SiO2 (300 nm) wafer with 10 nm Ti / 100 nm Au source-drain electrodes · about 191 nm | p003 / article p.35937 · Result and Discussion · Figure 1i and Table 1 |
| Ni-MOF-FET reacted for 60 minresearch_0230__mat__ni3_hitp2 | Thin Film · Target Sample · Pristine Framework | In situ grown Ni3(HITP)2 film on pre-patterned FET channel after 60 min solid-liquid interface reaction; silicon rubber well added around channel for liquid tests.Si (500 nm)/SiO2 (300 nm) wafer with 10 nm Ti / 100 nm Au source-drain electrodes · about 516 nm | p003 / article p.35937 · Result and Discussion · Figures 1, 2, 4; Table 1 |
| Ni-MOF film grown for 60 min without Au electrodesresearch_0230__mat__ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | Ni-MOF grown on a pure Si/SiO2 wafer by the same in situ procedure for 60 min to compare with Au-patterned substrates.Pure Si/SiO2 wafer without gold plating · about 322 nm | p004 / article p.35938 · Result and Discussion · Figure S4c,f |
| Ni-MOF powderresearch_0230__mat__ni3_hitp2 | Powder · Target Sample · Pristine Framework | Ni-MOF powder used for PXRD and thermogravimetric analysis; preparation details are only partly specified through the comparison/drop-casting workflow. | p005 / SI p.S-5 and p007 / SI p.S-7 · Additional Figures · Figures S2 and S6 |
| Ni-MOF-FET prepared by scooping-up methodresearch_0230__mat__ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | Ni-MOF film formed in solution for 15 min and transferred to an Au-patterned Si/SiO2 wafer by scooping-up, then dried at 100 C under vacuum.Cleaned Au-patterned Si/SiO2 wafer | p002 / SI p.S-2 · Scooping-up method · Figure S5a-c |