Sensing Application — Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device

Measurement evidence

Sensing Application

Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device · Wang B., Luo Y., Liu B. et al. · ACS Applied Materials and Interfaces · 2019 · 35935-35940

1 measurement group · 3 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Liquid-gated FET response to gluconic acid

Field-effect transistor measurements

Ni-MOF-FET reacted for 60 min · Thin Film

Gluconic acid solutions from 10^-6 to 10^-3 g/mL in PBS; 5 uL analyte added into solution well after rinsing three times with same concentration; low gate voltage of -0.1 V.

Temperature: room temperature
Atmosphere: PBS/gluconic acid solution
Geometry: Liquid-gated Ni-MOF-FET with Ag wire gate and solution well
Context: pristine Ni-MOF FET sensing application
Measurement source: p004-p005 / article pp.35938-35939 · Result and Discussion · Figure 4c,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
highest gluconic acid concentration tested	10^-3 g/mL	—	—	Text Exact Reported	p004-p005 / article pp.35938-35939 · Result and Discussion · Figure 4c,d
lowest gluconic acid concentration tested	10^-6 g/mL	—	—	Text Exact Reported	p004-p005 / article pp.35938-35939 · Result and Discussion · Figure 4c,d
gluconic acid response trend	conductance declined and the Ids-Vgs plot shifted in the negative direction as gluconic acid concentration increased	—	—	Text Qualitative	p005 / article p.35939 · Result and Discussion · Figure 4c,d