Spectroscopy — Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device

Measurement evidence

Spectroscopy

Field-Effect Transistor Based on an in Situ Grown Metal-Organic Framework Film as a Liquid-Gated Sensing Device · Wang B., Luo Y., Liu B. et al. · ACS Applied Materials and Interfaces · 2019 · 35935-35940

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

X-ray photoelectron spectroscopy (XPS)

Ni-MOF-FET reacted for 60 min · Thin Film

XPS survey and high-resolution spectra of Ni-MOF film.

Context
pristine Ni-MOF film
Measurement source
p003 / article p.35937 · Result and Discussion · Figure S2b-d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
C 1s binding energyC 1s at 284.80 eVText
Exact Reported
p003 / article p.35937 · Result and Discussion · Figure S2d
N 1s binding energyN 1s at 399.22 eVText
Exact Reported
p003 / article p.35937 · Result and Discussion · Figure S2b,d
Ni binding-energy peakNi 2s at 855.66 eVText
Exact Reported
p003 / article p.35937 · Result and Discussion · Figure S2c,d
O 1s binding energyO 1s at 534.04 eVText
Exact Reported
p003 / article p.35937 · Result and Discussion · Figure S2d