Electrical Transport — Conductive Lanthanide Metal-Organic Frameworks with Exceptionally High Stability

Measurement evidence

Electrical Transport

Conductive Lanthanide Metal-Organic Frameworks with Exceptionally High Stability · Chen C.-L., Wang C., Zheng X.-Y. et al. · Journal of the American Chemical Society · 2023 · 16983-16987

11 measurement groups · 16 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

two-probe I-V control

blank device fabricated without MOF crystal · Electrode

blank device without crystals, same fabrication manner

Temperature
295
Atmosphere
50% RH
Geometry
Au/SiO2/Si device without MOF
Context
control device
Measurement source
2 · Electrical measurement · Figure S13
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
blank-device currentNo current above detection limitText
Qualitative
2 · Electrical measurement · Figure S13

temperature-dependent conductance Arrhenius plot

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

G/G295K plotted versus 1000/T

Temperature
110-373
Atmosphere
not specified
Geometry
single-crystal device
Context
pristine framework device
Measurement source
3 · Stability evaluation · Figure S24
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
activation energy0.02 eVText
Exact Reported
3 · Stability evaluation · Figure S24

field-effect transistor transfer measurement

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

three-terminal device; gate voltage varied

Temperature
295
Atmosphere
ambient
Geometry
FET-style single-crystal device
Context
pristine framework device
Measurement source
9 · Figure S11 text · Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
FET gate modulationsource-drain current unaffected by gate voltageText
Qualitative
9 · Figure S11 text · Figure S11

constant-voltage current-time stability

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

40 V across about 50 um source-drain distance; electric field 800000 V/m; up to 120 min

Temperature
295
Atmosphere
not specified
Geometry
single-crystal c-axis device
Context
pristine framework device
Measurement source
14 · Figure S25 · Figure S25
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
electric field stability800000 V/m for up to 2 hText
Exact Reported
3 · Stability evaluation · Figure S25
source-drain current under 40 V high-field testapproximately 2.2 nA, stable over 120 minVisual Estimate
Approximate
14 · Figure S25 · Figure S25

single-crystal conductivity before/after anion exchange

Gd4-MOF after MnO4- anion exchange · Single Crystal

Gd4-MOF before and after MnO4- exchange; c-axis conductivity

Temperature
295
Atmosphere
ambient
Geometry
single-crystal device
Context
guest-loaded framework
Measurement source
15 · Figure S26 caption and text · Figure S26
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
conductivity after MnO4- exchangeapproximately 5.6 x 10^-5 S/mVisual Estimate
Approximate
15 · Figure S26 · Figure S26c
conductivity before MnO4- exchangeapproximately 5.5 x 10^-5 S/mVisual Estimate
Approximate
15 · Figure S26 · Figure S26c

two-probe I-V conductivity

Gd4-MOF single-crystal two-probe device, a-axis aligned · Electrode

voltage applied across a-axis, perpendicular to 1D conductive aromatic wire

Temperature
295
Atmosphere
50% RH
Geometry
single-crystal device with a-axis across source-drain direction
Context
pristine framework device
Measurement source
2 · Electrical anisotropy · Figure 2b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
conductivity anisotropy c-axis/a-axis4180SI Table
Exact Reported
17 · Table S1 · Table S1
a-axis electrical conductivityabout 3 orders of magnitude lower than c-axis; calculated from anisotropy 4180 gives approx 1.2 x 10^-8 S/mCalculated From Reported
Approximate
2 · Electrical anisotropy · Figure 2b; Table S1

two-probe I-V conductivity

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

room temperature, 50% relative humidity; more than 50 devices

Temperature
295
Atmosphere
50% RH
Geometry
single-crystal device with c-axis along source-drain direction
Context
pristine framework device
Measurement source
2 · Electrical conductivity · Figure 2a,b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
c-axis electrical conductivity5.0 x 10^-5 S/mText
Approximate
2 · Electrical conductivity · Figure 2b

two-probe conductivity after pH soaking

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

Ln4-MOF crystals soaked at different pH values for 12 h, then conductivity along c-axis measured

Temperature
298
Atmosphere
50% RH after soaking
Geometry
single-crystal devices
Context
treated framework devices
Measurement source
3 · Stability evaluation · Figure 3c
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
conductivity variation after pH exposureless than 16% after exposure to different pH values for 12 hText
Approximate
3 · Stability evaluation · Figure 3c
pH stability rangepH 1-12Text
Range
1 · Abstract

in situ conductivity at 100 C

Gd4-MOF single-crystal two-probe device, c-axis aligned · Electrode

devices heated under air and moisture during test for 10 h

Temperature
373
Atmosphere
air and moisture; 50% RH labelled
Geometry
single-crystal c-axis devices
Context
pristine framework devices
Measurement source
3 · Stability evaluation · Figure 3d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
in situ device temperature100 C / 373 KText
Exact Reported
1 and 3 · Abstract and stability · Figure 3d
duration of maintained conductivity at 100 C10 hText
Exact Reported
3 · Stability evaluation · Figure 3d

two-probe I-V conductivity

Lu4-MOF single-crystal two-probe device, c-axis aligned · Electrode

room temperature, 50% relative humidity

Temperature
295
Atmosphere
50% RH
Geometry
single-crystal device with c-axis along source-drain direction
Context
pristine framework device
Measurement source
18 · Table S2 · Table S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
c-axis electrical conductivity1 x 10^-4 S/mSI Table
Rounded Reported
18 · Table S2 · Table S2

two-probe I-V conductivity

Tm4-MOF single-crystal two-probe device, c-axis aligned · Electrode

room temperature, 50% relative humidity

Temperature
295
Atmosphere
50% RH
Geometry
single-crystal device with c-axis along source-drain direction
Context
pristine framework device
Measurement source
18-19 · Tables S2-S3 · Table S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
c-axis electrical conductivityMarked as a best value within this paper2 x 10^-4 S/mSI Table
Rounded Reported
18-19 · Tables S2-S3 · Table S3