DFT DOS calculations (VASP 6.3.1, PAW, PBE, DFT-D3, DFT+U)
as-synthesised Gd4-MOF single crystals · Single Crystal
cutoff 550 eV; k-points 4 x 4 x 2; Ueff 4.6 eV Gd, 4.8 eV Tm, 5.5 eV Lu; spin polarization for Gd4/Tm4
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| conductivity change per stacking-distance change | 1% decrease of d leads to about 4-fold increase in sigma | — | — | Text Approximate | 3 · Conductivity tuning · Figure 2d |
| DFT plane-wave cutoff | 550 eV | — | — | Text Exact Reported | 3 · 6 Density functional theory calculations |
| DOS contribution for Gd4-MOF and Lu4-MOF | primarily C/O/N 2p states near Fermi level | — | — | Text Qualitative | 11 · Figure S18 text · Figure S18 |
| DOS contribution for Tm4-MOF | C/O/N 2p states and Tm 4f states near Fermi level | — | — | Text Qualitative | 11 · Figure S18 text · Figure S18 |
| DFT k-point mesh | 4 x 4 x 2 | — | — | Text Exact Reported | 3 · 6 Density functional theory calculations |