Electrical Transport — Chemiresistive and chem-FET Sensor: π-d conjugated metal-organic framework for ultra-sensitive and selective carbon monoxide detection

3 measurement groups · 17 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Field-effect transistor output and transfer characteristics

Field-effect transistor measurements

Zn-HHTP on interdigitated Au electrodes on Si/SiO2 · Electrode

Keithley 4200A SPA; Vgs stepped by 1 V; Vds swept from -10 to +10 V; transfer at Vds = 1 V

Geometry: back-gated Chem-FET using Zn-HHTP bridging source/drain Au microelectrodes on Si/SiO2
Context: pristine Zn-HHTP FET device
Measurement source: 5 · 4.3. Field-effect transistor measurement · Fig. 5a,b,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
FET carrier type	p-type holes when Vds is positive; n-type electrons when Vds is negative; ambipolar transfer behaviour	—	—	Text Qualitative	5 · 4.3. Field-effect transistor measurement · Fig. 5a,b
Estimated hole concentration at Vgs = 1 V	3.235305 cm-1 as printed	—	unit/exponent appears inconsistent in article text	Text Uncertain	6 · 4.3. Field-effect transistor measurement · Fig. 5b
Estimated hole concentration at Vgs = 2 V	6.47061 x 10^10 cm-1	—	unit appears inconsistent with carrier concentration	Text Uncertain	6 · 4.3. Field-effect transistor measurement · Fig. 5b
Estimated hole concentration at Vgs = 3 V	9.705915 cm-1 as printed	—	unit/exponent appears inconsistent in article text	Text Uncertain	6-7 · 4.3. Field-effect transistor measurement · Fig. 5b
Carrier mobilityMarked as a best value within this paper	0.55 x 10-2 cm2 V-1 s-1	—	—	Text Exact Reported	7 · 4.3. Field-effect transistor measurement · Fig. 5b
FET on/off ratio	10.7	—	—	Text Exact Reported	6 · 4.3. Field-effect transistor measurement · Fig. 5b
FET output Vds sweep upper bound	-10 V to +10 V	—	range upper bound	Text Range	5 · 4.3. Field-effect transistor measurement · Fig. 5a
FET output Vds sweep lower bound	-10 V to +10 V	—	range lower bound	Text Range	5 · 4.3. Field-effect transistor measurement · Fig. 5a
FET transfer-characteristic Vds	Vds = 1 V	—	—	Caption Exact Reported	7 · 4.3. Field-effect transistor measurement · Fig. 5b

SI charge-carrier mobility and hole-concentration calculation formulas

Zn-HHTP on interdigitated Au electrodes on Si/SiO2 · Electrode

Supplementary information reports calculation inputs for mobility and hole concentration: dielectric capacitance, drain voltage, source-drain distance, threshold voltage determined from transfer characteristics, and electron charge.

Geometry: Zn-HHTP Chem-FET source-drain gap from SI
Context: pristine Zn-HHTP FET device
Measurement source: 1 · Details of Computation: Charge Carrier Mobility and Hole Concentration

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Dielectric capacitance used for carrier calculations	CG = 103.53 x 10^-11 F	—	—	Text Exact Reported	Details of Computation: Charge Carrier Mobility and Hole Concentration
Electron charge used for hole-concentration calculation	e = 1.6 x 10^-19 C	—	—	Text Exact Reported	Details of Computation: Charge Carrier Mobility and Hole Concentration
Hole-concentration formula	p = C_G V_TH / (e L_SD) m-1	—	—	Text Exact Reported	1 · 1.2 Hole Concentration
Charge-carrier mobility formula	mu = L_SD^2 (dI/dV) / (C_G V_DS)	—	—	Text Exact Reported	1 · 1.1 Charge carrier Mobility
Source-drain distance used for calculations	LSD = 3 um	0.000003 m	—	Text Exact Reported	Details of Computation: Charge Carrier Mobility and Hole Concentration
Drain voltage used for mobility calculation	VDS = -1 V constant	—	—	Text Exact Reported	Details of Computation: Charge Carrier Mobility and Hole Concentration

Two-probe I-V conductivity measurement

Electrical conductivity

as-synthesised Zn-HHTP blue powder · Powder

I-V characteristics shown for Zn-HHTP

Geometry: two-probe method
Context: pristine Zn-HHTP
Measurement source: 3 · 3. Results and discussion · Fig. 3d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivityMarked as a best value within this paper	8.47 x 10-6 S/m	8.47e-8 S/cm	—	Text Exact Reported	3 · 3. Results and discussion · Fig. 3d
I-V character	S-shaped, exponentially voltage-related curve confirming semiconducting nature	—	—	Text Qualitative	3 · 3. Results and discussion · Fig. 3d