Electrical Transport — In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor

Measurement evidence

Electrical Transport

In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2 (M = Co, Ni) thin film for field-effect transistor-based glucose biosensor · Tan P., Shen S., Luo Y. et al. · Chinese Chemical Letters · 2026 · 111636

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

FET I-V and liquid-gate transfer curves using Keysight B1500A

Electrical conductivity Field-effect transistor measurements

Co/Ni-HITP-GA-GOX-FET sensor · Electrode

Electrical properties of Co/Ni-HITP-GA-GOX-FET; liquid-gate transfer curve

Temperature: room temperature
Atmosphere: PBS/electrolyte liquid gate
Geometry: electrolyte-gated FET with Au source-drain electrodes and Co/Ni-HITP channel
Context: GA/GOX-modified biosensor sample
Measurement source: 3 · Results · Fig. 4a-c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
I-V slope after GA and GOX modification	slope decreases after GA and decreases further after GOX	—	—	Text Qualitative	3 · Results · Fig. 4c
I-V linearity / ohmic contact	good linear relationship of I-V curves; good ohmic contact	—	—	Text Qualitative	3 · Results · Fig. 4a
Co/Ni-HITP-GA-GOX-FET I-V current span	about -300 to +300 uA over about -0.4 to +0.5 V Vds	—	—	Visual Estimate Approximate	4 · Rendered figure inspection · Fig. 4a
FET transfer polarity	drain current increased with negative gate voltage; typical p-type characteristic	—	—	Text Qualitative	3 · Results · Fig. 4b