Measurement evidence
MOF Nanosheet Reconstructed Two-Dimensional Bionic Nanochannel for Protonic Field-Effect Transistors · Wu G.-D., Zhou H.-L., Fu Z.-H. et al. · Angewandte Chemie - International Edition · 2021 · 9931-9935
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Cu-TCPP thin-film H+-FET device · Electrode
Gate-dependent current under pure Ar, Ar + 90% RH, and Ar + 90% RH + 5% H2
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Field-effect response without H2 | No field-effect regulated current observed in pure Ar or Ar with 90% RH. | — | — | Text Qualitative | 4 · Main text · Figure S12 |
Cu-TCPP thin-film H+-FET device · Electrode
Cu-TCPP active-layer transport measured under vacuum, air with varied RH, Ar + 90% RH, and Ar + 90% RH + 5% H2
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Conductivity in air at 70% RH | 4.1 x 10^-5 S cm^-1 | 0.000041 S cm-1 | — | Text Rounded Reported | 3 · Main text · Figure 2g |
| Conductivity in air at 98% RH | 5.4 x 10^-4 S cm^-1 | 0.00054 S cm-1 | — | Text Rounded Reported | 3 · Main text · Figure 2g |
| Conductivity under 5% H2 and 90% RHMarked as a best value within this paper | 1.0 x 10^-3 S cm^-1 | 0.001 S cm-1 | — | Text Rounded Reported | 3 · Main text · Figure 2h |
| Electronic conductivity under vacuum | 3.6 x 10^-8 S cm^-1 | 3.6e-8 S cm-1 | — | Text Rounded Reported | 3 · Main text · Figure S3 referenced in text; Figure 2g |
| Conductivity enhancement by adding H2 | approximately 2.7 times higher than without 5% H2 | 2.7 times | — | Text Approximate | 3 · Main text · Figure 2h |
Cu-TCPP thin-film H+-FET device · Electrode
Leakage current between source and gate compared with source-drain current during H+-FET operation
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Maximum gate leakage current in Figure S8 | approximately 9-10 nA over -10 to 10 V gate sweep | 1e-8 A | visual estimate from plotted points | Visual Estimate Approximate | 5 · Supporting Information · Figure S8 |
Cu-TCPP thin-film H+-FET device · Electrode
Gate-modulated Cu-TCPP H+-FET measured under 90% RH and 5% H2; VGS varied from -10 to 10 V
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Cu-TCPP H+-FET on/off ratioMarked as a best value within this paper | approximately 4.1 times | 4.1 times | — | Text Approximate | 3 · Main text · Figure S9 |
| Estimated proton mobility in Cu-TCPP MOF protonic channelMarked as a best value within this paper | approximately 9.5 x 10^-3 cm2 V^-1 s^-1 | 0.0095 cm2 V-1 s-1 | — | Text Approximate | 3 · Main text · Figure 3b,c |
| Proton concentration at higher-conductivity gate state | 4.2 x 10^17 cm^-3 | 420000000000000000 cm-3 | — | Text Rounded Reported | 3 · Main text · Figure 3c |
| Proton concentration at lower-conductivity gate state | 0.9 x 10^17 cm^-3 | 90000000000000000 cm-3 | — | Text Rounded Reported | 3 · Main text · Figure 3c |
Cu-TCPP thin-film H+-FET device · Electrode
Cu-TCPP H+-FET on/off ratio after 10 gate sweeps and five devices from same batch
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Device 1 proton mobilityMarked as a best value within this paper | approximately 9.7 x 10^-3 cm2 V^-1 s^-1 | 0.0097 cm2 V-1 s-1 | — | SI Table Approximate | 7 · Supporting Information · Table S1 |
| Device 1 on/off ratio | 4.09 | 4.09 times | — | SI Table Rounded Reported | 7 · Supporting Information · Table S1 |
| Device 2 proton mobility | approximately 8.5 x 10^-3 cm2 V^-1 s^-1 | 0.0085 cm2 V-1 s-1 | — | SI Table Approximate | 7 · Supporting Information · Table S1 |
| Device 2 on/off ratio | 3.21 | 3.21 times | — | SI Table Rounded Reported | 7 · Supporting Information · Table S1 |
| Device 3 proton mobility | approximately 7.4 x 10^-3 cm2 V^-1 s^-1 | 0.0074 cm2 V-1 s-1 | — | SI Table Approximate | 7 · Supporting Information · Table S1 |
| Device 3 on/off ratio | 3.23 | 3.23 times | — | SI Table Rounded Reported | 7 · Supporting Information · Table S1 |
| Device 4 proton mobility | approximately 5.5 x 10^-3 cm2 V^-1 s^-1 | 0.0055 cm2 V-1 s-1 | — | SI Table Approximate | 7 · Supporting Information · Table S1 |
| Device 4 on/off ratio | 3.81 | 3.81 times | — | SI Table Rounded Reported | 7 · Supporting Information · Table S1 |
| Device 5 proton mobility | approximately 4.3 x 10^-3 cm2 V^-1 s^-1 | 0.0043 cm2 V-1 s-1 | — | SI Table Approximate | 7 · Supporting Information · Table S1 |
| Device 5 on/off ratio | 4.03 | 4.03 times | — | SI Table Rounded Reported | 7 · Supporting Information · Table S1 |
| Repeated gate-sweep on/off ratio | 3.95 +/- 0.1 in 10 times sweeping | 3.95 times | +/- 0.1 | Text Rounded Reported | 6 · Supporting Information · Figure S10 |
Cu-TCPP thin-film H+-FET device · Electrode
Cu-TCPP thin film with 10 deposition cycles tested in dry air and under 5% H2 plus 90% RH
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Sweep-rate-dependent I-V behaviour | I-V curves at 5% H2 and 90% RH show strong frequency-dependent behaviours. | — | — | Text Qualitative | 3 · Main text · Figure S7 |