Partial recipeSource: Main
Route 1: Other
3 · Main text · Figure 2e,f; Figure 3a
Metal precursorsPre-prepared palladium electrodes; Cu-TCPP thin film
Linker precursorsCu-TCPP thin film containing TCPP linkers
SolventsNot specified
AdditivesHydrogen atmosphere forms PdHx during device operation
AtmosphereDevice evaluated under vacuum, air/RH, Ar, Ar + 90% RH, and Ar + 90% RH + 5% H2; fabrication atmosphere not specified
Substrate orientationCu-TCPP thin film on SiO2/Si+ substrate; heavily doped Si acts as gate
Oxidant / reductantH2 converts Pd contacts to PdHx during protonic operation
Work-up50 nm Cu-TCPP thin film deposited on SiO2/Si+ with a pair of pre-prepared 80 nm Pd electrodes
ActivationNo conventional activation reported; PdHx generated in situ under H2 atmosphere for proton exchange
Scalability contextDevice geometry is shown optically, but lithography/deposition recipe details are not provided.
Show 3 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Other | 50-nm Cu-TCPP thin film | Not specified | 3 · Main text · Figure 2e,f; Figure 3a |
| Metal Source | palladium electrodes | 80 nm | 3 · Main text · Figure 2e,f; Figure 3a |
| Reductant | H2 | 5% · 5% H2 in Ar with 90% RH during device operation | 3 · Main text · Figure 2e,f; Figure 3a |