Electrical Transport — MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

3 measurement groups · 15 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

OFET transfer and output curves using semiconductor parameter analyser

Field-effect transistor measurements

DTT-8 2DMC OFET control · Electrode

Charge-transport properties of OFET based on DTT-8 2DMC.

Temperature: room temperature
Atmosphere: air
Geometry: Bottom-gate/top-contact OFET; detailed channel dimensions not specified for this control.
Context: DTT-8 OFET control without MOF floating gate.
Measurement source: SI p.5 · Figure S11 · Fig. S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DTT-8 OFET output current at high negative bias	approximately 20 uA at VDS = -60 V and VGS = -60 V	0.00002 A	—	Visual Estimate Approximate	SI p.5 · Figure S11 · Fig. S11b
DTT-8 2DMC OFET transport type	significant p-type transport characteristics	—	—	Text Qualitative	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S11

Optoelectronic transistor transfer curves under 365 nm laser irradiation

Field-effect transistor measurements

Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistor · Electrode

Floating-gate memory response under varied 365 nm illumination intensities.

Temperature: room temperature
Atmosphere: air
Geometry: Bottom-gate/top-contact OFET with Cu3(HHTP)2 floating gate, PMMA blocking layer and DTT-8 channel.
Context: Composite device containing pristine Cu3(HHTP)2 MOF film.
Measurement source: main p.4-5, article pp.6946-6947 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3b-c and Fig. S12

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
IDS increase after laser irradiation	up to 3 orders of magnitude	1000 fold	—	Text Rounded Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3d
Maximum specific detectivity D*Marked as a best value within this paper	7 x 10^15 Jones	7000000000000000 Jones	—	Text Rounded Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S12
Optical memory transistor memory windowMarked as a best value within this paper	36 V	36 V	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3c
Number of current states obtained by changing light doseMarked as a best value within this paper	ten different current states	10 states	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3d-f
No-MOF control memory behaviour	optical switching only, without memory behavior	—	—	Text Qualitative	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S13-S14
Maximum photosensitivity PMarked as a best value within this paper	1 x 10^7	10000000 dimensionless	—	Text Rounded Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S12
Maximum photoresponsivityMarked as a best value within this paper	450 A W-1	450 A W-1	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S12

Optical programming/electrical erasing cycling and current retention

Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistor · Electrode

365 nm laser programming for 10 s; electrical erasure with VGS = -60 V for 2 s; repeated cycling and retention tests.

Temperature: room temperature
Atmosphere: air
Geometry: Floating-gate optical memory transistor.
Context: Composite device containing Cu3(HHTP)2 MOF floating gate.
Measurement source: main p.4-5, article pp.6946-6947 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3g-i and Fig. S15-S16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Programming/erasing cycle durabilityMarked as a best value within this paper	100 cycles with no performance degradation / almost no attenuation in programming state	100 cycles	—	Text Exact Reported	main p.1 and p.5, article pp.6943 and 6947 · Abstract and 2.3 · Fig. 3h
Electrical erasing duration	2 seconds	2 s	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3g
Electrical erasing gate voltage	VGS = -60 V	-60 V	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3g
Light-intensity-dependent on/off ratioMarked as a best value within this paper	2 x 10^6	2000000 dimensionless	—	Text Rounded Reported	main p.5, article p.6947 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S16
Optical programming pulse duration	365 nm laser for 10 seconds	10 s	—	Text Exact Reported	main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3g
Optical memory current retention time reported in main text	up to approximately 10 000 seconds	10000 s	—	Text Approximate	main p.5, article p.6947 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S15