Spectroscopy — MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

4 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistor · Electrode

Surface potential changes before, after 20 s laser irradiation, and after 10 min.

Atmosphere: air
Geometry: DTT-8 2DMC with MOF floating gate structure.
Context: Composite device stack.
Measurement source: main p.5-6, article pp.6947-6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4a-d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DTT-8 2DMC surface potential after 20 s laser irradiation	1162 mV	1.162 V	—	Text Exact Reported	main p.5, article p.6947 · 2.4 Working mechanism of optical memory transistors · Fig. 4d
Initial DTT-8 2DMC surface potential	823 mV	0.823 V	—	Text Exact Reported	main p.5, article p.6947 · 2.4 Working mechanism of optical memory transistors · Fig. 4d
DTT-8 2DMC surface-potential increase after irradiation	339 mV calculated from 1162 - 823 mV	0.339 V	—	Calculated From Reported Exact Reported	main p.5, article p.6947 · 2.4 Working mechanism of optical memory transistors · Fig. 4d

Pristine 2D Cu3(HHTP)2 MOF thin film · Thin Film

Energy levels calculated from UPS spectrum and optical band gap for 12 nm-thick Cu3(HHTP)2 film.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(HHTP)2 optical band gap	Eg = 2.9 eV	2.9 eV	—	Text Rounded Reported	SI p.8 · Fig. S17 text · Fig. S17
Cu3(HHTP)2 film thickness for UPS/band-gap analysis	12 nm thickness	12 nm	—	Text Exact Reported	SI p.8 · Fig. S17 text · Fig. S17
Cu3(HHTP)2 HOMO energy level	EHOMO = -6.15 eV	-6.15 eV	—	Calculated From Reported Rounded Reported	SI p.8 · Fig. S17 text · Fig. S17
Cu3(HHTP)2 LUMO energy level	ELUMO = -3.25 eV	-3.25 eV	—	Calculated From Reported Rounded Reported	SI p.8 · Fig. S17 text · Fig. S17

Pristine 2D Cu3(HHTP)2 MOF thin film · Thin Film

Ligand coordination and elemental/chemical-state characterisation.

Geometry: Cu3(HHTP)2 film.
Context: Pristine conductive-MOF film.
Measurement source: main p.2, article p.6944 · 2.1 Preparation and characterization of 2D MOF films · Fig. 1h-i and Fig. S6-S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
XPS evidence for Cu, C and O coordination in Cu3(HHTP)2	formation and high coordination of Cu, C, and O elements in MOF films	—	—	Text Qualitative	main p.2, article p.6944 · 2.1 Preparation and characterization of 2D MOF films · Fig. 1h-i and Fig. S7

Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistor · Electrode

Comparison of MOF/PMMA/DTT-8 and PMMA/DTT-8 structures under 365 nm excitation.

Geometry: Layered DTT-8/PMMA/MOF and DTT-8/PMMA structures.
Context: Composite device stack and no-MOF control.
Measurement source: main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4e-f

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Fast PL lifetime component for DTT-8/PMMA control	t1 = 1.91 ns	1.91 ns	—	Text Exact Reported	main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4f
Fast PL lifetime component for DTT-8/PMMA/MOF	t1 = 1.71 ns	1.71 ns	—	Text Exact Reported	main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4f
Slow PL lifetime component for DTT-8/PMMA control	t2 = 9.39 ns	9.39 ns	—	Text Exact Reported	main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4f
Slow PL lifetime component for DTT-8/PMMA/MOF	t2 = 7.71 ns	7.71 ns	—	Text Exact Reported	main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4f