Gao S., Ren Y., Zhang D. et al. · Journal of Materials Chemistry C · 2024 · 6943-6951
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The MOF/PMMA/DTT-8 transistor demonstrates multilevel optical memory with ten current states and a 36 V memory window.
Caveat: Ten 'states' in the main text are cross-reported as 10 bit in SI Table S1; downstream comparisons should distinguish these wordings.
main p.7, article p.6949 · 3 Conclusions · Fig. 3 · Linked to 3 structured results
Retention time is internally inconsistent: the main text and SI Fig. S15 describe about 10000 s, but SI Table S1 lists 2 x 10^6 s for this work.
Caveat: Both values were extracted with provenance; use caution in leaderboard comparisons.
SI p.9 · Table S1 · Table S1 · Linked to 2 structured results
The Cu3(HHTP)2 MOF film acts as the floating-gate charge-trapping layer that captures photogenerated electrons and enables memory behaviour.
Caveat: Direct intrinsic conductivity of the Cu3(HHTP)2 film was not reported; evidence is through device behaviour and spectroscopic/mechanistic tests.
main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S13-S14 · Linked to 4 structured results
Adding the MOF layer decreases PL intensity and shortens DTT-8 PL lifetimes, indicating accelerated separation of DTT-8 photogenerated excitons.
Caveat: The PL lifetime comparison supports faster exciton separation but does not alone quantify transferred charge yield.
main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4e-f · Linked to 4 structured results
The PMMA blocking layer suppresses electron return from the MOF to DTT-8 after illumination, helping retain the high-conductivity state.
Caveat: Mechanistic interpretation is inferred from KPFM, PL and device retention rather than direct electron trapping spectroscopy.
main p.6, article p.6948 · 2.4 Working mechanism of optical memory transistors · Fig. 4g-i · Linked to 2 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Two-dimensional Cu3(HHTP)2 metal-organic framework filmBrowse family: Cu₃(HHTP)₂ / Cu–HHTP | Cu3(HHTP)2Copper ions coordinated with HHTP ligands; Cu, C and O coordination confirmed by XPS. · 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) | 2D · PristineHexagonal 2D MOF film with XRD peaks assigned to (100), (200), (210) and (002); used as the floating-gate charge-trapping layer. | main p.2, article p.6944 · 2.1 Preparation and characterization of 2D MOF films · Fig. 1 |
| DTT-8 two-dimensional molecular crystal | 2,6-bis(4-octylphenyl)-dithieno[3,2-b:2',3'-d]thiophenenot_applicable · not_applicable | 2D · PristineLarge-area single-crystal organic semiconductor film with bc-plane parallel to the substrate. | main p.2, article p.6944 · 2.2 Preparation and characterization of 2DMCs · Fig. 2 |
| MOF/PMMA/DTT-8 floating-gate optoelectronic memory transistor stackBrowse family: Cu₃(HHTP)₂ / Cu–HHTP | Si/SiO2/Cu3(HHTP)2/PMMA/DTT-8/Au device stackCu3(HHTP)2 MOF floating-gate layer; Au source-drain electrodes · HHTP in the MOF; DTT-8 organic semiconductor; PMMA blocking layer | 2D · CompositeLayer-by-layer bottom-gate top-contact OFET memory device with Cu3(HHTP)2 MOF as floating gate and DTT-8 2DMC as active layer. | main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. 3a |
| PMMA/DTT-8 control transistor without MOF film | Si/SiO2/PMMA/DTT-8/Au control stackAu source-drain electrodes; no MOF metal nodes · not_applicable | 2D · CompositeControl device lacking the Cu3(HHTP)2 floating-gate layer. | main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S13 and Fig. S14 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Pristine 2D Cu3(HHTP)2 MOF thin filmresearch_0659__mat__cu3_hhtp2_mof | Thin Film · Target Sample · Pristine Framework | Self-assembled at water/organic-solvent interface; transferred to substrate for testing and characterisation.Prepared at a gas-liquid interface and transferred to Si/SiO2 for characterisation. · About 19.5-20.7 nm from AFM labels in Fig. S4; 12 nm film used for UPS/optical band gap calculation in Fig. S17. | main p.2, article p.6944 · 2.1 Preparation and characterization of 2D MOF films · Fig. 1 and Fig. S4 |
| Pristine DTT-8 two-dimensional molecular crystal filmresearch_0659__mat__dtt8_2dmc | Single Crystal · Composite Component · Unknown | Solution-epitaxy-grown large-area organic 2D molecular crystal.Grown on glycerol liquid substrate; transferred to PMMA/MOF or control stack. · 10.5 nm by AFM. | main p.3, article p.6945 · 2.2 Preparation and characterization of 2DMCs · Fig. 2 |
| DTT-8 2DMC OFET controlresearch_0659__mat__dtt8_2dmc | Electrode · Pristine Control · Unknown | Bottom-gate/top-contact OFET based on DTT-8 2DMC, used for charge-transport characterisation.Si/SiO2 bottom-gate substrate with Au source-drain electrodes. · DTT-8 2DMC thickness 10.5 nm. | main p.4, article p.6946 · 2.3 2DMC optical memory transistors based on MOF floating gate · Fig. S11 |
| Cu3(HHTP)2/PMMA/DTT-8 floating-gate optical memory transistorresearch_0659__mat__mof_pmma_dtt8_stack | Electrode · Composite Sample · Composite | MOF film transferred, PMMA spin-coated/annealed, DTT-8 transferred, Au electrodes mechanically stamped.Si/SiO2 (300 nm) substrate; bottom-gate/top-contact device. · SiO2 300 nm; Au electrodes 120 nm; DTT-8 10.5 nm; Cu3(HHTP)2 film about 20 nm in Fig. S4 unless otherwise specified. | main p.8, article p.6950 · Device fabrication · Fig. 3a and Fig. S10 |
| 3 x 3 pixel Cu3(HHTP)2/PMMA/DTT-8 photo-memory transistor arrayresearch_0659__mat__mof_pmma_dtt8_stack | Electrode · Composite Sample · Composite | Nine-pixel photo-memory transistor array used for T-shape optical current mapping.Large-area DTT-8 2DMC device array on the MOF/PMMA floating-gate stack. · Gold square electrodes 35 x 35 um2; channel length 30 um; Au thickness not specified for array. | main p.6, article p.6948 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5 |
| PMMA/DTT-8 device without MOF filmresearch_0659__mat__pmma_dtt8_control_stack | Electrode · Pristine Control · Composite | Control device tested under different illumination intensities and numbers.Si/SiO2 bottom-gate substrate. · DTT-8 10.5 nm; PMMA thickness not specified. | SI p.7 · Figures S13-S14 · Fig. S13 and Fig. S14 |