Sensing Application — MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

Measurement evidence

Sensing Application

MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture · Gao S., Ren Y., Zhang D. et al. · Journal of Materials Chemistry C · 2024 · 6943-6951

1 measurement group · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

3 x 3 optoelectronic memory transistor array current mapping

3 x 3 pixel Cu3(HHTP)2/PMMA/DTT-8 photo-memory transistor array · Electrode

T-shaped optical mask projected on device array; current maps recorded at 0, 10 and 30 min after laser irradiation.

Geometry: 35 x 35 um2 square gold electrodes; 30 um channel length between adjacent electrodes; 3 x 3 pixel array.
Context: Composite Cu3(HHTP)2/PMMA/DTT-8 memory array.
Measurement source: main p.6-7, article pp.6948-6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Array channel length between adjacent electrodes	30 um	30 um	—	Text Exact Reported	main p.6, article p.6948 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5b
Array IDS in mask-blocked area	10^-12 A	1e-12 A	—	Text Rounded Reported	main p.7, article p.6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5d-f
Array exposed/blocked current differenceMarked as a best value within this paper	more than four orders of magnitude	10000 fold	—	Text Approximate	main p.7, article p.6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5d-f
Array IDS in illuminated hollowed-out T-mask areaMarked as a best value within this paper	>10^-8 A	1e-8 A	—	Text Approximate	main p.7, article p.6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5d-f
Array IDS before laser exposure	10^-12 A	1e-12 A	—	Text Rounded Reported	main p.7, article p.6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5c
Square gold electrode area for array	35 x 35 um2	1225 um2	—	Calculated From Reported Exact Reported	main p.6, article p.6948 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5b
Photo-memory transistor array size	3 x 3 pixel array	9 pixels	—	Text Exact Reported	main p.6, article p.6948 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5b
T-shape pattern retention durationMarked as a best value within this paper	30 minutes	1800 s	—	Text Exact Reported	main p.7, article p.6949 · 2.5 Image sensing and memory function based on optical memory transistors · Fig. 5d-f