Electrical Transport — Asymmetrical Substitution Manipulates Stacking Modes in 2D Conductive MOF Crystals

6 measurement groups · 15 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3F2HHTP2 single-crystal device · Single Crystal

Single-crystal device; conductivity calculated from device resistance and cylindrical cross-section assumption.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3F2HHTP2 room-temperature single-crystal conductivityMarked as a best value within this paper	1.51 S cm-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure S47; Table S4
Cu3F2HHTP2 device 3 ambient-air conductivity before cryostat	0.77 S cm-1 under ambient conditions	—	—	Text Rounded Reported	82-83 · Figure S66 · Figure S66

Cu3FHHTP2 single-crystal device · Single Crystal

Single-crystal device; conductivity calculated from device resistance and cylindrical cross-section assumption.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3FHHTP2 room-temperature single-crystal conductivityMarked as a best value within this paper	0.21 S cm-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure S46; Table S4

Cu3HHTP2 single-crystal device · Single Crystal

Single-crystal device; conductivity calculated from device resistance and cylindrical cross-section assumption.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3HHTP2 room-temperature single-crystal conductivityMarked as a best value within this paper	0.70 S cm-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure S45; Table S4

Cu3F2HHTP2 Hall pellet · Pellet

AC-field Hall method using Lake Shore 8404 with 1.2 T RMS AC field; Van der Pauw pellet configuration.

Temperature: 295
Geometry: compressed circular pellet, 6 mm diameter, connected to gold electrode with silver wire
Context: pristine MOF pellets
Measurement source: 8 · Hall effect measurements · Figures S53-S58

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3F2HHTP2 carrier density	2.72 x 10^19 cm-3	—	—	Text Rounded Reported	7 · Results and Discussion · Figure 5h
Cu3FHHTP2 carrier density	1.58 x 10^18 cm-3	—	—	Text Rounded Reported	7 · Results and Discussion · Figure 5h
Cu3HHTP2 carrier densityMarked as a best value within this paper	7.12 x 10^19 cm-3	—	—	Text Rounded Reported	7 · Results and Discussion · Figure 5h
Cu3F2HHTP2 Hall electron mobilityMarked as a best value within this paper	0.051 cm2 V-1 s-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5h; Figures S53-S58
Cu3FHHTP2 Hall electron mobility	0.014 cm2 V-1 s-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5h; Figures S53-S58
Cu3HHTP2 Hall electron mobility	0.011 cm2 V-1 s-1	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5h; Figures S53-S58

FHHTP molecular crystal/model · Model

Top-contact/bottom-gate and top-gate/bottom-contact device processes; Keithley 4200 SCS under ambient conditions.

Temperature: 295
Atmosphere: ambient, 22 degC, RH 50-60%
Geometry: ligand thin-film FETs
Context: ligand control, not MOF
Measurement source: 7-8 · OFET devices fabrications and testing · Figure S35

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ligand thin-film OFET mobility	no detectable hole or electron mobility for any of the three ligands	—	—	Text Qualitative	8 · OFET devices fabrications and testing · Figure S35

Cu3F2HHTP2 single-crystal device · Single Crystal

Autocube attoDRY 2100; 295 to 150 K at 5 K/min; activation energy extracted from linear fit of ln(sigma) versus 1/T.

Temperature: 150-295
Atmosphere: cryostat/helium environment
Geometry: four-contact single-crystal devices bonded to chip with aluminium wire
Context: pristine MOF series
Measurement source: 8 · Variable temperature electrical conductivity measurement · Figures S50-S52

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3F2HHTP2 device 3 conductivity after cryostat placement	0.02 S cm-1	—	—	Text Rounded Reported	82-83 · Figure S66 · Figure S66
Cu3F2HHTP2 activation energy	122 meV	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5d; Figures S50-S52
Cu3FHHTP2 activation energy	161 meV	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5d; Figures S50-S52
Cu3HHTP2 activation energy	118 meV	—	—	Text Rounded Reported	6 · Results and Discussion · Figure 5d; Figures S50-S52