Electrical Transport — Highly conducting two-dimensional copper(i) 4-hydroxythiophenolate network

4 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Bottom-contact FET output and transfer characteristics

Field-effect transistor measurements

drop-cast CuAT thin film on bottom-contact FET · Thin Film

IDS versus VDS at different VGS and IDS versus VGS at different VDS; non-saturating device, mobility extracted in the linear regime.

Atmosphere: nitrogen glove box, <0.1 ppm H2O and O2
Geometry: bottom-contact substrate-gate FET; L = 2 um, W = 100 um; 100 nm SiO2; Ti/Au contacts
Context: O-acetylated CuHT derivative thin film
Measurement source: 2 · CuAT FET discussion · Fig. 2(v), 2(vi)

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
hole mobilityMarked as a best value within this paper	1 x 10-2 cm-2 V-1 s-1	—	—	Text Rounded Reported	2 · CuAT FET discussion · Fig. 2(v), 2(vi)
CuAT output current at high negative bias	visual estimate: IDS about -1.2 uA at VDS about -40 V for the most negative VGS curve	—	approximate from figure axis	Figure Axis Approximate	2 · FET figure · Fig. 2(v)
FET polarity	p-type FET behaviour	—	—	Text Qualitative	3 · CuAT FET discussion · Fig. 2(v), 2(vi)
CuAT transfer current at high negative gate voltage	visual estimate: IDS about -1.4 uA at VGS about -40 V for highest-\|VDS\| curve	—	approximate from figure axis	Figure Axis Approximate	2 · FET figure · Fig. 2(vi)
FET channel length	2 um	—	—	Text Exact Reported	4 · FET Device Fabrication and Charge Mobility Measurement
FET channel width	100 um	—	—	Text Exact Reported	4 · FET Device Fabrication and Charge Mobility Measurement
gate oxide thickness	100 nm	—	—	Text Exact Reported	4 · FET Device Fabrication and Charge Mobility Measurement

Bottom-contact FET output characteristics

Field-effect transistor measurements

drop-cast CuHT crystallites on bottom-contact FET · Thin Film

IDS versus VDS at VGS = +6 to -6 V; drop-cast platy CuHT crystallites; measured using Keithley K4200 in nitrogen glove box.

Atmosphere: nitrogen glove box, <0.1 ppm H2O and O2
Geometry: bottom-contact substrate-gate FET; L = 2 um, W = 100 um; 100 nm SiO2; Ti/Au contacts
Context: pristine CuHT drop-cast FET active layer
Measurement source: 2 · FET discussion · Fig. 2(iv)

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CuHT FET output current magnitude	visual estimate: \|IDS\| reaches approximately 5 x 10-5 A near \|VDS\| = 6 V	—	approximate from small rendered axis	Visual Estimate Approximate	2 · FET figure · Fig. 2(iv)
gate modulation	no field-effect behaviour; current could not be modulated by the gate	—	—	Text Qualitative	3 · transport discussion · Fig. 2(iv)

Four-point probe current-voltage conductivity measurement

Electrical conductivity

pressed CuHT pellet · Pellet

Pressed CuHT pellet measured in nitrogen glove box (<0.1 ppm water and oxygen); K4200 semiconductor parameter analyser; volume resistivity equation in SI.

Atmosphere: nitrogen glove box, <0.1 ppm H2O and O2
Geometry: four-point probe on about 1 cm diameter pellet
Context: pristine CuHT bulk pellet
Measurement source: 2 · transport discussion · Fig. 2(iii)

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
bulk electrical conductivityMarked as a best value within this paper	120 S cm-1	—	—	Text Rounded Reported	2 · transport discussion · Fig. 2(iii)
four-point-probe I-V shape	approximately linear/symmetric I-V trace over about -1 to +1 V	—	—	Figure Axis Qualitative	2 · transport discussion · Fig. 2(iii)

Transient current measurement

drop-cast CuHT crystallites on bottom-contact FET · Thin Film

SI Fig. S4 compares IDS over time for CuHT and CuAT devices; CuAT result is associated with cuat_fet_film in paired result rows.

Geometry: FET devices
Context: CuHT pristine FET and CuAT post-modified FET compared
Measurement source: 3 · transport discussion · Fig. S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CuAT transient current decay	visual estimate: black CuAT IDS decays from about 1.0 uA to about 0.16 uA by 30000 s	—	approximate from SI Fig. S4 axis	Figure Axis Approximate	7 · figures · Fig. S4
CuHT transient current stability	no decay for prolonged device operation; visual current remains near 1.0 uA to 30000 s	—	time extent read from SI Fig. S4 axis	Figure Axis Approximate	3 · transport discussion · Fig. S4