Electrical Transport — Metal-organic framework transistors for dopamine sensing

Measurement evidence

Electrical Transport

Metal-organic framework transistors for dopamine sensing · Song J., Zheng J., Yang A. et al. · Materials Chemistry Frontiers · 2021 · 3422-3427

2 measurement groups · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

field-effect transistor transfer curve

Cu3(HHTP)2-based FET on SiO2/Si · Thin Film

FET transfer characteristic used to extract mobility from the linear region.

Geometry
SiO2 (300 nm)/Si substrate; channel width W = 0.4 mm and length L = 0.2 mm in SI caption
Context
pristine Cu3(HHTP)2 film FET
Measurement source
p003-p004 / 3424-3425 · Results and discussion / Fabrication of the Cu3(HHTP)2-based FET · Fig. S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
field-effect mobilityMarked as a best value within this paper4.0 cm2 V-1 s-1Text
Rounded Reported
p003 / 3424 · Results and discussion · Fig. S4

solution-gated transistor output and transfer curves

Cu3(HHTP)2-based solution-gated MOF transistor · Thin Film

0.1 M CaCl2 electrolyte; Ag/AgCl (sat. KCl) gate; two Keithley 2400 source meters.

Atmosphere
aqueous electrolyte
Geometry
MOF thickness ca. 150 nm; channel width W = 6 mm; channel length L = 0.2 mm
Context
pristine Cu3(HHTP)2 channel in electrolyte-gated device
Measurement source
p003 / 3424 · Results and discussion · Fig. 3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
gate-tuned conductivity upper boundMarked as a best value within this paper1.56 S cm-1Text
Exact Reported
p003 / 3424 · Results and discussion · Fig. 3a
gate-tuned conductivity lower bound0.05 S cm-1Text
Exact Reported
p003 / 3424 · Results and discussion · Fig. 3a
transfer characteristic polaritytypical n-type transfer characteristicText
Qualitative
p003 / 3424 · Results and discussion · Fig. 3b