Metal-organic framework transistors for dopamine sensing

1materials

4samples

3synthesis routes

11measurements

29results

5claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Sensing Application4 measurements9 results →Microscopy Morphology2 measurements7 results →Diffraction Structure1 measurement5 results →Electrical Transport2 measurements4 results →Electrochemistry Application1 measurement2 results →Spectroscopy1 measurement2 results →

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: Medium

The SGMT dopamine sensor is selective against glucose and less sensitive to UA and AA; AA resistance is attributed to electrostatic repulsion between negatively charged AA and the negatively charged MOF film.

Caveat: Selectivity data are mostly figure-supported real-time traces; no full calibration/statistical analysis for interferents is provided in the text layer.

p004 / 3425 · Results and discussion · Fig. 4d, Fig. S7 · Linked to 3 structured results

Application RelevanceSupport assessment: High

The SGMT architecture improves dopamine sensitivity relative to a two-terminal Cu3(HHTP)2 chemiresistor, achieving a 100 nM detection limit under tens-of-millivolts operation.

Caveat: Chemiresistor comparison is described in the main text and SI figure but not as a detailed statistical benchmark.

p004 / 3425 · Results and discussion · Fig. 4c-d, Fig. S6 · Linked to 2 structured results

Phase AssignmentSupport assessment: High

GIXRD confirms successful preparation of Cu3(HHTP)2 films with a 2D honeycomb lattice and preferential [001] oriented growth on glass.

Caveat: No CIF or new structure refinement is reported in the assigned documents; assignment relies on matching previous Cu3(HHTP)2 studies.

p002 / 3423 · Results and discussion · Fig. 2b · Linked to 5 structured results

Transport MechanismSupport assessment: Medium

Dopamine sensing is attributed to oxidation of dopamine on the Cu3(HHTP)2 film, which donates electrons to the n-type channel and increases channel conductivity.

Caveat: CV supports DA redox on the MOF film, but the exact interfacial charge-transfer pathway is proposed rather than directly quantified.

p003 / 3424 · Results and discussion · Fig. 4b, Fig. S5 · Linked to 3 structured results

Transport MechanismSupport assessment: High

The Cu3(HHTP)2 SGMT exhibits n-type behaviour because positive gate bias drives cations from the electrolyte into the porous MOF channel, increasing conductivity.

Caveat: Mechanistic interpretation is inferred from transistor response and electrolyte gating rather than direct operando ion quantification.

p003 / 3424 · Results and discussion · Fig. 3 · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

Material	Composition	Structure context	Source
Cu3(HHTP)2Browse family: Cu₃(HHTP)₂ / Cu–HHTP	Cu3(HHTP)2Cu nodes · HHTP (2,3,6,7,10,11-hexahydroxytriphenylene)	2D · PristineSemiconducting 2D conductive MOF film; GIXRD matches reported Cu3(HHTP)2 crystallinity and confirms a 2D honeycomb lattice with preferential [001] oriented growth on glass.	p002 / 3423 · Results and discussion · Fig. 1b, Fig. 2b

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 4 sample records

Sample	Form and role	Processing and geometry	Source
Cu3(HHTP)2 two-terminal chemiresistor without gateresearch_0158__mat__mat_cu3_hhtp2	Thin Film · Pristine Control · Pristine Framework	Two-terminal chemiresistor control based on the same MOF, operated without a gate electrode.electrode substrate, gate omitted · not explicitly stated; same MOF film control	p004 / 3425 · Results and discussion · Fig. S6
Cu3(HHTP)2-based FET on SiO2/Siresearch_0158__mat__mat_cu3_hhtp2	Thin Film · Pristine Control · Pristine Framework	Cu3(HHTP)2 grown on SiO2/Si using the same film processing as SGMTs.SiO2 (300 nm)/Si · 15 growth cycles	p004 / 3425 · Fabrication of the Cu3(HHTP)2-based FET · Fig. S4
15-cycle Cu3(HHTP)2 film on glassresearch_0158__mat__mat_cu3_hhtp2	Thin Film · Pristine Control · Pristine Framework	Layer-by-layer assembled film, ethanol washed and annealed at 85 C for 30 min under high-purity N2.glass · ca. 150 nm (15 cycles; SI figure label gives 158 nm)	p002 / 3423 · Results and discussion · Fig. 2
Cu3(HHTP)2-based solution-gated MOF transistorresearch_0158__mat__mat_cu3_hhtp2	Thin Film · Target Sample · Pristine Framework	Patterned and encapsulated Cu3(HHTP)2 thin-film channel operated in 0.1 M CaCl2 electrolyte.OH-functionalised glass with Cr/Au source-drain electrodes; PDMS encapsulated channel; Ag/AgCl gate in electrolyte · ca. 150 nm (15 growth cycles)	p004 / 3425 · Fabrication of the Cu3(HHTP)2-based SGMT · Fig. 1b