Electrical Transport — Adjustable Synthesis of Ni-Based Metal-Organic Framework Membranes and Their Field-Effect Transistor Sensors for Mercury Detection

5 measurement groups · 11 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

S4-based Ni3(HITP)2-GA-DNA FET sensor · Electrode

Channel membrane electrical properties tested before and after modification with GA and DNA probes.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Pristine membrane I-V behaviour	linear plot indicates good Ohmic contact between channel material and Au electrode	—	—	Text Qualitative	628 · 3.2. Hg2+ Sensing Performance · Figure S11
Resistance change after GA/DNA	slope reduces after GA and resistance increases further after DNA	—	—	Text Qualitative	628 · 3.2. Hg2+ Sensing Performance · Figure S11

S1 Ni3(HITP)2 membrane · Thin Film

Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.

Geometry: source-drain channel length 50 um and width 1000 um
Context: pristine Ni3(HITP)2 FET channel
Measurement source: S-2 · Carrier mobility calculation · Formula S1; Figure S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
S1 FET mobility	about 6.15 cm2 V-1 s-1	—	about	Text Approximate	S-2 · Carrier mobility calculation
S1 threshold voltage	about 2.10 V	—	about	Text Approximate	S-2 · Carrier mobility calculation

S2 Ni3(HITP)2 membrane · Thin Film

Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.

Geometry: source-drain channel length 50 um and width 1000 um
Context: pristine Ni3(HITP)2 FET channel
Measurement source: S-2 · Carrier mobility calculation · Formula S1; Figure S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
S2 FET mobility	about 10.98 cm2 V-1 s-1	—	about	Text Approximate	S-2 · Carrier mobility calculation
S2 threshold voltage	about 2.71 V	—	about	Text Approximate	S-2 · Carrier mobility calculation

S3 Ni3(HITP)2 membrane · Thin Film

Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
S3 FET mobility	about 37.54 cm2 V-1 s-1	—	about	Text Approximate	S-2 · Carrier mobility calculation
S3 threshold voltage	about 2.57 V	—	about	Text Approximate	S-2 · Carrier mobility calculation

S4 Ni3(HITP)2 membrane · Thin Film

Back-gate FET characterisation; Vds = -1 V for transfer curves; 300 nm SiO2 dielectric with Ci about 11.5 nF cm-2; W/L = 1000/50 um.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
S4 FET mobilityMarked as a best value within this paper	about 270.9 cm2 V-1 s-1	—	about	Text Approximate	626 · 3.2. Hg2+ Sensing Performance · Figure S6
S4 threshold voltageMarked as a best value within this paper	about 7.82 V	—	about	Text Approximate	S-2 · Carrier mobility calculation
FET carrier type	p-type characteristic; holes are the major carriers	—	—	Text Qualitative	626 · 3.2. Hg2+ Sensing Performance · Figure S6a-d