Shen S., Tan P., Tang Y. et al. · ACS Applied Electronic Materials · 2022 · 622-630
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The S4-based Ni3(HITP)2-GA-DNA FET sensor gives the best Hg2+ sensing response, with a linear response from 10 pM to 100 nM and R2 = 0.981.
Caveat: Calibration slope and R2 are read from the figure label; individual current response points are visual estimates.
627 · 3.2. Hg2+ Sensing Performance · Figure 7 · Linked to 4 structured results
The S4 Ni3(HITP)2-GA-DNA FET sensor shows degraded performance on retesting after 26 h and is presented as a one-time-use sensor.
Caveat: Only one retest interval (26 h) is shown in the supplied documents.
627 · 3.2. Hg2+ Sensing Performance · Figure S10 · Linked to 1 structured result
DNA probes are required for Hg2+ capture/identification, while GA improves chemical loading of DNA probes on Ni3(HITP)2.
Caveat: Control responses are mainly qualitative in the text; exact control current responses are not tabulated.
627 · 3.2. Hg2+ Sensing Performance · Figure S9 · Linked to 4 structured results
S1-S4 membranes are assigned as pure Ni3(HITP)2 with a two-dimensional stacked honeycomb structure.
Caveat: PXRD/FT-IR are reported as series data; no CIF/refinement data are included in the supplied documents.
626 · 3.1. Structural and Morphological Characteristics · Figure 5 · Linked to 6 structured results
Increasing ammonia/water ratio makes the Ni3(HITP)2 membrane denser and thicker, and increases FET mobility from about 6.15 to 270.9 cm2 V-1 s-1.
Caveat: Mobility values are reported as approximate calculated values; mechanistic attribution to membrane density is the authors' interpretation.
626 · 3.2. Hg2+ Sensing Performance · Figure S6 · Linked to 5 structured results
Hg2+ binds specifically between thymine bases in the DNA probes to form T-Hg2+-T structures, affecting channel conductance and increasing drain current through hole accumulation in the p-type MOF channel.
Caveat: Mechanism is inferred from known T-Hg2+-T binding and current response; direct spectroscopic proof of T-Hg2+-T in this device is not shown in the extracted text.
628 · 3.2. Hg2+ Sensing Performance · Figure 9 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Ni3(HITP)2 membraneBrowse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2; Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2Ni coordinated to imino/amino N sites · HITP generated from HATP.6HCl (2,3,6,7,10,11-hexaaminotriphenylene hexahydrochloride) under alkaline conditions | 2D · PristineConductive layered two-dimensional stacked honeycomb Ni-HITP framework; PXRD reflections assigned to (100), (200) and (001) planes. | 623 · 2.3. In Situ Synthesis of Ni3(HITP)2 Membranes |
| Ni3(HITP)2-DNA FET sensor controlBrowse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2 membrane physically/chemically associated with DNA probe without GA cross-linkerNi centres in Ni3(HITP)2 · HITP framework plus DNA probe | 2D · CompositeDNA-modified Ni3(HITP)2 membrane control used to test the GA cross-linker contribution. | 627 · 3.2. Hg2+ Sensing Performance · Figure S9 |
| Ni3(HITP)2-GA FET sensor controlBrowse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2 membrane modified with glutaraldehydeNi centres in Ni3(HITP)2 · HITP framework plus glutaraldehyde | 2D · CompositeGA-functionalised Ni3(HITP)2 membrane control used to test whether DNA is required for Hg2+ response. | 627 · 3.2. Hg2+ Sensing Performance · Figure S9 |
| Ni3(HITP)2-GA-DNA FET sensorBrowse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2 membrane modified with glutaraldehyde and amino-terminated DNA probeNi centres in Ni3(HITP)2 · HITP framework plus GA cross-linker and 5'-NH2-TTG-TTG-TTT-CCT-TTC-GTT-TT-3' DNA probe | 2D · CompositeFunctionalised conductive MOF membrane; XRD/FT-IR after GA/DNA modification remains similar to pristine S4 and SEM morphology remains nanosheet-like. | 627 · 3.2. Hg2+ Sensing Performance · Figures S7 and S8 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| S1-based Ni3(HITP)2-GA-DNA FET sensorresearch_0491__mat__mat_ni3_hitp2_ga_dna | Electrode · Target Sample · Composite | S1 membrane modified with 0.25% GA for 60 min and 10 uM DNA probe in 1x TE buffer for 12 h at 0-4 deg C.S1 Ni3(HITP)2 membrane on Si/SiO2/Au FET device with silicon rubber liquid cell · pristine membrane thickness 24.1 nm before modification | 623 · 2.4. Sensor Fabrication |
| S1 Ni3(HITP)2 membraneresearch_0491__mat__mat_ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | In situ hydrothermal membrane grown with ammonia/water volume ratio 1/5; pH 9.9; dried under vacuum at 100 deg C for 2 h.Si/SiO2 FET device with patterned Au source/drain electrodes · 24.1 nm | 623 · 2.3. In Situ Synthesis of Ni3(HITP)2 Membranes |
| S2-based Ni3(HITP)2-GA-DNA FET sensorresearch_0491__mat__mat_ni3_hitp2_ga_dna | Electrode · Target Sample · Composite | S2 membrane modified with 0.25% GA for 60 min and 10 uM DNA probe in 1x TE buffer for 12 h at 0-4 deg C.S2 Ni3(HITP)2 membrane on Si/SiO2/Au FET device with silicon rubber liquid cell · pristine membrane thickness 60.5 nm before modification | 626 · 3.2. Hg2+ Sensing Performance · Figure 6b |
| S2 Ni3(HITP)2 membraneresearch_0491__mat__mat_ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | In situ hydrothermal membrane grown with ammonia/water volume ratio 1/2; pH 10.2; dried under vacuum at 100 deg C for 2 h.Si/SiO2 FET device with patterned Au source/drain electrodes · 60.5 nm | 623 · 2.3. In Situ Synthesis of Ni3(HITP)2 Membranes |
| S3-based Ni3(HITP)2-GA-DNA FET sensorresearch_0491__mat__mat_ni3_hitp2_ga_dna | Electrode · Target Sample · Composite | S3 membrane modified with 0.25% GA for 60 min and 10 uM DNA probe in 1x TE buffer for 12 h at 0-4 deg C.S3 Ni3(HITP)2 membrane on Si/SiO2/Au FET device with silicon rubber liquid cell · pristine membrane thickness 88.3 nm before modification | 627 · 3.2. Hg2+ Sensing Performance · Figure 6c |
| S3 Ni3(HITP)2 membraneresearch_0491__mat__mat_ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | In situ hydrothermal membrane grown with ammonia/water volume ratio 2/1; pH 10.6; dried under vacuum at 100 deg C for 2 h.Si/SiO2 FET device with patterned Au source/drain electrodes · 88.3 nm | 623 · 2.3. In Situ Synthesis of Ni3(HITP)2 Membranes |
| S4-based Ni3(HITP)2-DNA FET sensor controlresearch_0491__mat__mat_ni3_hitp2_dna | Electrode · Pristine Control · Composite | S4 membrane exposed to DNA probe without GA cross-linking.S4 Ni3(HITP)2 membrane on Si/SiO2/Au FET device · pristine membrane thickness 114.7 nm before modification | 627 · 3.2. Hg2+ Sensing Performance · Figure S9 |
| S4-based Ni3(HITP)2-GA FET sensor controlresearch_0491__mat__mat_ni3_hitp2_ga | Electrode · Pristine Control · Composite | S4 membrane modified with GA but without DNA probe.S4 Ni3(HITP)2 membrane on Si/SiO2/Au FET device · pristine membrane thickness 114.7 nm before modification | 627 · 3.2. Hg2+ Sensing Performance · Figure S9 |
| S4-based Ni3(HITP)2-GA-DNA FET sensorresearch_0491__mat__mat_ni3_hitp2_ga_dna | Electrode · Target Sample · Composite | S4 membrane modified with 0.25% GA for 60 min and 10 uM DNA probe in 1x TE buffer for 12 h at 0-4 deg C.S4 Ni3(HITP)2 membrane on Si/SiO2/Au FET device with silicon rubber liquid cell · pristine membrane thickness 114.7 nm before modification | 627 · 3.2. Hg2+ Sensing Performance · Figures 6d and 7 |
| S4 Ni3(HITP)2 membraneresearch_0491__mat__mat_ni3_hitp2 | Thin Film · Pristine Control · Pristine Framework | In situ hydrothermal membrane grown with ammonia/water volume ratio 3/0; pH 11.1; dried under vacuum at 100 deg C for 2 h.Si/SiO2 FET device with patterned Au source/drain electrodes · 114.7 nm | 626 · 3.1. Structural and Morphological Characteristics · Figure 2d,h |
| S4-based unmodified Ni3(HITP)2 FET sensor controlresearch_0491__mat__mat_ni3_hitp2 | Electrode · Pristine Control · Pristine Framework | Unmodified S4 membrane tested directly for Hg2+ response.S4 Ni3(HITP)2 membrane on Si/SiO2/Au FET device · 114.7 nm | S-11 · Figure S9 caption · Figure S9a |