Electrical Transport — Field effect transistor based on proton conductive metal organic framework (CuBTC)

2 measurement groups · 18 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Alternating-current impedance spectroscopy on CHI 660C electrochemical workstation

Impedance spectroscopy

Im@CuBTC pressed pellet for AC impedance · Pellet

1 Hz to 100 KHz; anhydrous atmosphere; Im@CuBTC pressed pellet; temperature range 35-70 C.

Temperature: 308-343
Atmosphere: anhydrous
Geometry: pressed pellet, 0.2 mm thickness and 0.4 mm diameter
Context: Im@CuBTC target sample; pristine CuBTC not reported for conductivity in this measurement.
Measurement source: rendered pages 6 and 8 / article pp. 5 and 7 · 2.5; 3. Results and discussion · Figure 9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Im@CuBTC proton conductivity at 35 C	ln(sigma/S cm^-1) visually approx. -20.1 at 35 C	1.9e-7 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 40 C	ln(sigma/S cm^-1) visually approx. -17.0 at 40 C	0.0000041 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 45 C	ln(sigma/S cm^-1) visually approx. -15.8 at 45 C	0.000014 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 50 C	ln(sigma/S cm^-1) visually approx. -13.8 at 50 C	0.0001 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 55 C	ln(sigma/S cm^-1) visually approx. -12.0 at 55 C	0.00061 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 60 C	ln(sigma/S cm^-1) visually approx. -10.1 at 60 C	0.0041 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Im@CuBTC proton conductivity at 65 C	ln(sigma/S cm^-1) visually approx. -9.4 at 65 C	0.0083 S m^-1	visual estimate from Arrhenius plot	Figure Axis Approximate	rendered page 8 / article p. 7 · 3. Results and discussion · Figure 9(B)
Best reported proton conductivity of Im@CuBTCMarked as a best value within this paper	1.04 x 10^-4 S cm^-1 at 70 C under anhydrous conditions	0.0104 S m^-1	—	Text Rounded Reported	rendered page 9 / article p. 8 · 3. Results and discussion · Figure 9

FET output and transfer characteristics using Keithley 4200 SCS semiconductor parameter analyser

Field-effect transistor measurements

Im@CuBTC drop-cast FET channel on Si/SiO2 with Cr/Au electrodes · Thin Film

FET device measured at 50 C in an anhydrous atmosphere; output characteristics and transfer at Vds = 2 V.

Temperature: 323
Atmosphere: anhydrous
Geometry: drop-cast Im@CuBTC channel between Au electrodes on 100 nm SiO2/p-type Si; Cr 20 nm/Au 180 nm contacts; channel gap shown as 3 um in figure schematic
Context: Target Im@CuBTC FET; pristine CuBTC FET not reported.
Measurement source: rendered pages 8-9 / article pp. 7-8 · 4. FET performance · Figures 10 and 11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ambipolar FET behaviourMarked as a best value within this paper	p-type holes for positive Vds and n-type electrons for negative Vds; V-shaped transfer curve confirms ambipolarity	—	—	Qualitative Qualitative	rendered page 9 / article p. 8 · 4. FET performance · Figure 11
FET gold electrode thickness	180 nm Au	—	—	Text Exact Reported	rendered page 4 / article p. 3 · 2.4. Substrate preparation and development of FET device · Figure 10
FET source-drain gap shown in schematic	3 um	—	—	Figure Axis Rounded Reported	rendered page 8 / article p. 7 · Figure 10 · Figure 10
FET chromium adhesion layer thickness	20 nm Cr	—	—	Text Exact Reported	rendered page 4 / article p. 3 · 2.4. Substrate preparation and development of FET device · Figure 10
Im@CuBTC film thickness used for mobility calculation	approx. 50 um	—	approx.	Text Approximate	rendered page 9 / article p. 8 · 4. FET performance · Equation 2
FET charge carrier mobility at Vds = 2 V	~0.04 x 10^-3 cm2 V^-1 s^-1	4e-9 m2 V^-1 s^-1	~	Text Approximate	rendered page 9 / article p. 8 · 4. FET performance · Equation 2
FET on/off ratio	~826	—	~	Text Approximate	rendered page 9 / article p. 8 · 4. FET performance · Figure 11(D)
FET SiO2 dielectric thickness	100 nm SiO2	—	—	Text Exact Reported	rendered page 4 / article p. 3 · 2.4. Substrate preparation and development of FET device · Figure 10
FET measurement temperature	50 C	323.15 K	—	Text Exact Reported	rendered page 9 / article p. 8 · 4. FET performance · Figure 11
Threshold voltage at Vds = 2 V	approximately 7.0 V	—	approximately	Text Approximate	rendered page 9 / article p. 8 · 4. FET performance · Figure 11(D)