Electrical Transport — ChemFET Sensor: nanorods of nickel-substituted Metal–Organic framework for detection of SO2

Measurement evidence

Electrical Transport

ChemFET Sensor: nanorods of nickel-substituted Metal–Organic framework for detection of SO2 · Ingle N., Sayyad P., Bodkhe G. et al. · Applied Physics A: Materials Science and Processing · 2020 · 723

1 measurement group · 11 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Field effect transistor output and transfer characteristics using SPA Keithley 4200A

Field-effect transistor measurements

Ni3HHTP2 MOF ChemFET channel on Au/SiO2/Si · Electrode

Output: Vgs 1 to 5 V in 1 V steps; Vds swept 0-7 V. Transfer: Vds = 0.5 V.

Geometry: back-gated FET with Au source/drain, 3 um channel gap, Si/SiO2 gate dielectric
Context: pristine Ni3HHTP2 MOF active channel bridging Au electrodes
Measurement source: 3 · 3.4 Field Effect Transistor measurements · Fig. 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Au source-drain electrode gap	3 um	—	—	Text Exact Reported	1 · Abstract
Field-effect carrier mobilityMarked as a best value within this paper	8.5 x 10-2 cm2/Vs	—	—	Text Exact Reported	4 · 3.4 Field Effect Transistor measurements · Eq. 2
Output current at Vds 7 V, Vgs 1 V	approximately 20 uA from Fig. 5a	—	approx +/- 1 uA	Visual Estimate Approximate	5 · Figure page · Fig. 5a
ON-stage drain current	Ids = 0.46 mA	460 uA	—	Text Exact Reported	3 · 3.4 Field Effect Transistor measurements · Fig. 5b
FET on/off ratioMarked as a best value within this paper	10	—	—	Text Exact Reported	3 · 3.4 Field Effect Transistor measurements · Fig. 5b
Transfer curve ON-stage onset	after -22 V	—	—	Text Rounded Reported	3 · 3.4 Field Effect Transistor measurements · Fig. 5b
Ohmic-contact linear region	1.4 V to 7 V	—	—	Text Range	3 · 3.4 Field Effect Transistor measurements · Fig. 5a
Output-characteristic Vds sweep range	0-7 V	—	—	Text Range	3 · 3.4 Field Effect Transistor measurements · Fig. 5a
Output-characteristic Vgs range	1 to 5 V with steps of 1 V	—	—	Text Range	3 · 3.4 Field Effect Transistor measurements · Fig. 5a
Channel polarity	p type behavior	—	—	Qualitative Qualitative	1 · Abstract
Threshold voltageMarked as a best value within this paper	VTH = 0.6 V	—	—	Text Exact Reported	1 · Abstract