Ingle N., Sayyad P., Bodkhe G. et al. · Applied Physics A: Materials Science and Processing · 2020 · 723
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Ni3HHTP2 ChemFET is more responsive to SO2 than to CO, C2H2, NO2 and CH4 under the tested conditions.
Caveat: Selectivity values are read from plotted bars; exact tabulated values and SI/raw data were not available.
6 · 4 ChemFET sensing · Fig. 9 · Linked to 5 structured results
The Ni3HHTP2 ChemFET detects SO2 at a lower detection limit of 625 ppb at room temperature.
Caveat: The authors compare this to literature values, but raw detection-limit statistics are not provided.
6 · 5 Conclusions · Linked to 4 structured results
The rendered SI plots visually support reversible dynamic SO2 response across 625-1000 ppb and repeatable cycling at 875 ppb.
Caveat: Values are approximate figure-axis readings from rendered SI pages; no SI table or raw data were provided.
1-2 · Supporting Supplementary · Figures 1-2 · Linked to 7 structured results
The GIXRD pattern of the synthesised material matches reported Ni3HHTP2 MOF data.
Caveat: No CIF or full refinement data are provided in the assigned documents.
2 · 3.1 X-Ray diffraction · Fig. 2 · Linked to 4 structured results
The authors link Ni3HHTP2 nanorod roughness to trapping foreign gas analytes and improving ChemFET sensitivity.
Caveat: The causal link is asserted from morphology and sensing behaviour, not isolated by a roughness-controlled comparison.
3 · 3.3 Surface morphology studies · Fig. 4 · Linked to 1 structured result
The FET transfer characteristics indicate a p-type Ni3HHTP2 channel carrying holes as majority carriers.
Caveat: Carrier type is inferred from device characteristics rather than direct Hall measurement.
3 · 3.4 Field Effect Transistor measurements · Fig. 5 · Linked to 4 structured results
Electron-acceptor SO2 interacting with the p-type Ni3HHTP2 channel decreases drain current through charge-dipole interactions.
Caveat: Mechanistic explanation is qualitative; no independent adsorption or charge-transfer quantification is reported.
6 · 4 ChemFET sensing · Fig. 8 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Ni3HHTP2 MOF nanorodsBrowse family: Ni₃(HHTP)₂ / Ni–HHTP | Ni3HHTP2nickel(II) · 2,3,6,7,10,11-hexahydroxytriphenylene hydrate (HHTP) | 2D · PristineSemiconducting HHTP-based nickel MOF; GIXRD matched reported Ni3HHTP2 data with (100) and (200) reflections. | 1 · Abstract |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Au microelectrode Si/SiO2 back-gated platformresearch_0605__mat__ni3hhtp2_mof | Electrode · Paper Level Unspecified · Unknown | Iso-propyl alcohol cleaning, pre-baking at 110 C, Cr/Au deposition by e-beam and thermal evaporation under vacuum.highly boron doped p-type Si wafer with SiO2 insulating layer · Si 525 um; SiO2 100 nm; Cr/Au 20/180 nm | 2 · 2.1 Microelectrodes fabrication · Fig. 1 |
| Ni3HHTP2 MOF ChemFET channel on Au/SiO2/Siresearch_0605__mat__ni3hhtp2_mof | Electrode · Target Sample · Pristine Framework | Ni3HHTP2 solution drop-cast between two Au microelectrodes with 3 um gap and dried in ambient atmosphere.gold microelectrodes on Si/SiO2 back-gate substrate | 2 · 2.2 Synthesis of nanorods of Ni3HHTP2 MOF · Fig. 1 |
| chemically synthesized Ni3HHTP2 nanorodsresearch_0605__mat__ni3hhtp2_mof | Powder · Target Sample · Pristine Framework | Chemical synthesis in deionized water at 90 C; used as synthesized solution for drop casting. | 2 · 2.2 Synthesis of nanorods of Ni3HHTP2 MOF |