Single-crystal field-effect transistor transfer measurements
Stepwise-reduced KxFe2(BDP)3 single-microcrystal FET devices · Single Crystal
Transfer current fitted using standard FET equations and cylindrical channel capacitance; VSD = 1 V in Fig. 5c.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Average electron field-effect mobility of Fe2(BDP)3 | 2 x 10-3 cm2 V-1 s-1 | — | — | Text Rounded Reported | main p.5, article p.629 · Conductivity and charge mobility · Fig. 5d |
| Average hole field-effect mobility of Fe2(BDP)3 | 6 x 10-4 cm2 V-1 s-1 | — | — | Text Rounded Reported | main p.5, article p.629 · Conductivity and charge mobility · Fig. 5d |
| Peak electron field-effect mobility for K0.98Fe2(BDP)3Marked as a best value within this paper | 0.84 cm2 V-1 s-1 | — | — | Text Rounded Reported | main p.5, article p.629 · Conductivity and charge mobility · Fig. 5d; Table S7 |
| Device 1 field-effect mobility at x = 0.78 | 5.45E-01 cm2 V-1 s-1 | — | — | SI Table Exact Reported | SI p.40 · Table S7 · Table S7 |
| Estimated minimum mobility for effective-mass model | about 0.3 cm2 V-1 s-1 | — | about | Calculated From Reported Approximate | main p.5, article p.629 · Conductivity and charge mobility |