Electrical Transport — Interfacial Synthesis of Layer-Oriented 2D Conjugated Metal-Organic Framework Films toward Directional Charge Transport

6 measurement groups · 27 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Conductive AFM local vertical transport

Atomic force microscopy

Cu2[PcCu-O8] local vertical c-AFM sample · Thin Film

Icon AFM c-AFM mode, ambient pressure, room temperature; SCM-PIT-V2 PtIr tip k = 2.8 N m^-1; tip voltages 1-4 V; silver layer grounded; contact area about 100 nm2

Temperature: room temperature
Atmosphere: Ambient pressure
Geometry: PtIr AFM tip/Cu2[PcCu-O8]/Ag vertical contact
Context: MOF film on silver electrode
Measurement source: SI p. 10-11 · Vertical transport · Scheme S6; Figure S20

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Lateral-to-vertical conductivity ratio upper boundMarked as a best value within this paper	10^3-fold	—	range upper bound	Text Range	p. 5 · Charge Transport Properties · Figure 3h
Lateral-to-vertical conductivity ratio lower boundMarked as a best value within this paper	10^2-fold	—	range lower bound	Text Range	p. 5 · Charge Transport Properties · Figure 3h
c-AFM tip-film contact area	about 100 nm^2	—	—	Text Approximate	SI p. 10-11 · Vertical transport · Scheme S6
c-AFM sample mean film thickness	d = 19 +/- 3 nm	—	+/- 3 nm	Text Exact Reported	SI p. 11 · Vertical transport · Scheme S7
c-AFM point 1 fitted conductivity	about 1.7 x 10^-5 S cm^-1 from Scheme S6 label	—	—	Figure Axis Approximate	SI p. 11 · Vertical transport · Scheme S6a
c-AFM point 2 fitted conductivity	about 1.4 x 10^-5 S cm^-1 from Scheme S6 label	—	—	Figure Axis Approximate	SI p. 11 · Vertical transport · Scheme S6a
c-AFM point 3 fitted conductivity	about 0.8 x 10^-5 S cm^-1 from Scheme S6 label	—	—	Figure Axis Approximate	SI p. 11 · Vertical transport · Scheme S6a
c-AFM point 4 fitted conductivity	about 1.4 x 10^-5 S cm^-1 from Scheme S6 label	—	—	Figure Axis Approximate	SI p. 11 · Vertical transport · Scheme S6a
Local vertical c-AFM conductivity lower bound	10^-6 S cm^-1	—	range lower bound	Text Range	p. 5 · Charge Transport Properties · Figure 3g
Local vertical c-AFM conductivity upper bound	10^-5 S cm^-1	—	range upper bound	Text Range	p. 5 · Charge Transport Properties · Figure 3g

Van der Pauw Hall effect

Electrical conductivity Hall-effect measurements

Cu2[PcCu-O8] macroscopic van der Pauw device · Thin Film

Room temperature 300 K; perpendicular magnetic field swept from -4 T to 4 T

Temperature: 300
Geometry: Macroscopic van der Pauw Hall geometry
Context: Pristine Cu2[PcCu-O8] film
Measurement source: SI p. 6-9 · Hall measurements · Scheme S3; Scheme S4; Figure 3c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Hole concentration	about 7.33 x 10^14 cm^-3	—	—	Text Approximate	p. 5 · Charge Transport Properties · Figure 3c
Hall mobilityMarked as a best value within this paper	4.4 +/- 0.7 cm^2 V^-1 s^-1	—	+/- 0.7 cm^2 V^-1 s^-1	Text Exact Reported	p. 5 · Charge Transport Properties · Figure 3c
Carrier polarity	p-type semiconducting behaviour	—	—	Qualitative Qualitative	p. 5 · Charge Transport Properties · Figure 3c

Local lateral two-probe measurement in FET-style h-BN device

Electrical conductivity Field-effect transistor measurements

Cu2[PcCu-O8] local lateral h-BN/FET contact device · Thin Film

Contacts separated 100-500 nm, widths 8 um; representative 400 nm pair; measured in LakeShore Probe station CRX-VF at room temperature and 3e-5 mbar with two Keithley 2450 source meters

Temperature: room temperature
Atmosphere: 3e-5 mbar
Geometry: h-BN/SiO2/Si substrate; Ti/Au contacts by electron-beam lithography
Context: MOF active layer on h-BN device support
Measurement source: SI p. 9-10 · Lateral transport · Figure S19

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Local lateral contact distance upper bound	500 nm	—	—	Text Exact Reported	p. 5 · Charge Transport Properties · Figure 3f; Figure S19
Local lateral contact distance lower bound	100 nm	—	—	Text Exact Reported	p. 5 · Charge Transport Properties · Figure 3f; Figure S19
Field effect observation	No field effect up to +/-120 V gate voltage	—	—	Text Exact Reported	SI p. 10 · Lateral transport
Local lateral conductivity, representative 400 nm pairMarked as a best value within this paper	about 2 x 10^-3 S cm^-1	—	—	Text Approximate	p. 5 · Charge Transport Properties · Figure 3g; Figure S19

Two-probe lateral conductivity on 10 devices

Electrical conductivity

Cu2[PcCu-O8] edge-on MOF film · Thin Film

Ten two-probe devices with 300 um channel length

Geometry: Two-probe lateral; channel length 300 um
Context: Pristine Cu2[PcCu-O8] film in lateral devices
Measurement source: p. 4 · Charge Transport Properties · Figure S17

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Lateral two-probe conductivity for 300 um devices	about 3 x 10^-4 S cm^-1	—	—	Text Approximate	p. 4 · Charge Transport Properties · Figure S17

Van der Pauw DC conductivity

Electrical conductivity

Cu2[PcCu-O8] macroscopic van der Pauw device · Thin Film

Lakeshore Hall System 9700A; current scanned -10 nA to 10 nA; temperatures 256-310 K

Temperature: 256-310
Geometry: Macroscopic square van der Pauw; lateral contact separation about 1 cm; contact size 0.1 cm in SI scheme
Context: Pristine Cu2[PcCu-O8] film
Measurement source: SI p. 6 · Variable-temperature conductivity and Hall effect measurements · Scheme S1; Figure S15; Figure S16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Arrhenius activation energy	about 285 meV	0.285 eV	—	Text Approximate	p. 5 · Charge Transport Properties · Figure S16
Macroscopic lateral conductivity near 256 K	about 1.0 x 10^-4 S cm^-1 from Figure 3b axis	—	—	Figure Axis Uncertain	p. 4 · Charge Transport Properties · Figure 3b
Macroscopic lateral conductivity at 300 KMarked as a best value within this paper	5.6 x 10^-4 S cm^-1	—	—	Text Rounded Reported	p. 5 · Charge Transport Properties · Figure 3b
Macroscopic lateral conductivity near 310 K	about 8.5 x 10^-4 S cm^-1 from Figure 3b axis	—	—	Figure Axis Uncertain	p. 4 · Charge Transport Properties · Figure 3b

Macroscopic vertical DC device

Cu2[PcCu-O8] macroscopic vertical device · Thin Film

Gold top contacts; thickness varied 20-250 nm; area about 1.3e-3 cm2; resistance fitted from -1 to +1 V; 2Rc about 2600 ohm cm subtracted

Temperature: 300
Geometry: Top-bottom vertical device, L = film thickness, A about 1.3e-3 cm2
Context: Pristine Cu2[PcCu-O8] film in vertical device
Measurement source: SI p. 9 and p. 31 · Macroscopic vertical devices · Figure S18

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Vertical-device contact area	about 1.3 x 10^-3 cm^2	—	—	Text Approximate	SI p. 9 · Macroscopic vertical devices · Figure S18
Vertical-device contact resistance correction	about 2600 ohm cm	—	—	Text Approximate	SI p. 9 · Macroscopic vertical devices
Macroscopic vertical conductivityMarked as a best value within this paper	on the order of about 10^-6 S cm^-1	—	order-of-magnitude	Text Approximate	p. 5 · Charge Transport Properties · Figure 3d,e
Vertical-device thickness series upper bound	250 nm	—	—	Text Exact Reported	p. 5 · Charge Transport Properties · Figure 3e; Figure S18
Vertical-device thickness series lower bound	20 nm	—	—	Text Exact Reported	p. 5 · Charge Transport Properties · Figure 3e; Figure S18