EG-FET output/transfer characterisation using commercial p-channel MOSFET
CuHITP/Cu(OH)2 extended-gate electrode · Electrode
CuHITP-based extended-gate electrode integrated with commercial p-channel MOSFET; output at VGS = -1 V, transfer at VDS = -0.4 V; 60 min drift study at 1 min intervals.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| continuous-operation drift | about 8 mV h-1 | — | about | Text Approximate | 4 · 2.2 Electrical Characterization and pH Sensing · Figure 3e |
| drift from Figure 3e label | Drift = 8.1 mV/h | — | — | Figure Axis Exact Reported | 5 · Figure 3 · Figure 3e |
| EG-FET on/off current ratioMarked as a best value within this paper | 10^9 | — | — | Text Rounded Reported | 4 · 2.2 Electrical Characterization and pH Sensing · Figure S9 cited |
| normalised maximum transconductance with EG | about 65% of without-EG baseline | 0.65 fraction of without-EG baseline | visual estimate | Visual Estimate Approximate | 5 · Figure 3 · Figure 3d |
| normalised subthreshold swing with EG | about 100% of without-EG baseline | — | — | Visual Estimate Approximate | 5 · Figure 3d |
| normalised threshold voltage with EG | about 100% versus about 80% without EG | — | — | Visual Estimate Approximate | 5 · Figure 3d |
| normalised VGS at Gm,max with EG | about 90% of without-EG baseline | — | — | Visual Estimate Approximate | 5 · Figure 3d |