Spectroscopy — Sub-Femtomolar, Label-Free Small-Molecule Sensing with Nanoarchitectonic Metal-Organic Frameworks

4 measurement groups · 33 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

EDS phosphorus mapping

Elemental microanalysis and mapping

cortisol-aptamer-functionalised CuHITP EG-FET sensor · Electrode

Detection of P signal from DNA aptamer backbone after aptamer immobilisation; stability checked before and after biosensing.

Atmosphere: not reported
Geometry: functionalised sensing surface
Context: MBS/aptamer-functionalised CuHITP/Cu(OH)2 electrode
Measurement source: 7 · 2.3.1 Formation of Functional Groups · Figure 5e

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
aptamer-functionalised sample C atomic fraction	51.4 at.%	—	—	SI Table Exact Reported	6 · Supporting Information · Figure S7
aptamer-functionalised sample Cu atomic fraction	14.0 at.%	—	—	SI Table Exact Reported	6 · Supporting Information · Figure S7
aptamer-functionalised sample N atomic fraction	9.3 at.%	—	—	SI Table Exact Reported	6 · Supporting Information · Figure S7
aptamer-functionalised sample O atomic fraction	24.1 at.%	—	—	SI Table Exact Reported	6 · Supporting Information · Figure S7
aptamer-functionalised sample P atomic fraction	1.2 at.%	—	—	SI Table Exact Reported	6 · Supporting Information · Figure S7
P atomic concentration after aptamer immobilisation	about 2%	0.02 fraction	about	Text Approximate	7 · 2.3.1 Formation of Functional Groups · Figure 5e
P signal stability after biosensing	P signal remained stable before and after biosensing	—	—	Text Qualitative	7 · 2.3.1 Formation of Functional Groups · Figure 5e

raw EDS elemental analysis

Elemental microanalysis and mapping Bulk elemental and compositional analysis

CuHITP/Cu(OH)2 extended-gate electrode · Electrode

Raw EDS table for converted CuHITP sample in Figure S6.

Context: converted conductive-MOF heterostructure film
Measurement source: 5 · Supporting Information · Figure S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CuHITP C atomic fraction	53.4 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S6
CuHITP Cu atomic fraction	14.5 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S6
CuHITP N atomic fraction	9.4 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S6
CuHITP O atomic fraction	22.7 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S6

raw EDS elemental analysis

Elemental microanalysis and mapping Bulk elemental and compositional analysis

Cu(OH)2 nanoarray on patterned electrode · Electrode

Raw EDS table for Cu(OH)2 nanoarray in Figure S5.

Context: Cu(OH)2 precursor/template before CuHITP conversion
Measurement source: 5 · Supporting Information · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu(OH)2 C atomic fraction	3.6 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S5
Cu(OH)2 Cu atomic fraction	33.7 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S5
Cu(OH)2 N atomic fraction	0.0 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S5
Cu(OH)2 O atomic fraction	62.7 at.%	—	—	SI Table Exact Reported	5 · Supporting Information · Figure S5

X-ray photoelectron spectroscopy (XPS), full scan and high-resolution Cu 2p

X-ray photoelectron spectroscopy

CuHITP/Cu(OH)2 extended-gate electrode · Electrode

Elemental composition and Cu oxidation states in converted CuHITP structures.

Atmosphere: not reported
Geometry: film/electrode surface
Context: Converted CuHITP/Cu(OH)2 heterostructure before aptamer functionalisation
Measurement source: 3 · 2.1 Material Characterization · Figure 2a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
C 1s binding energy	284.40 eV	—	—	Text Exact Reported	3 · 2.1 Material Characterization · Figure 2a
C 1s component	281.2 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
C 1s component	284.4 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
C 1s component	285.5 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
C 1s component	288.0 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
Cu 2p1/2 fitted component	952.2 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
Cu 2p1/2 fitted component	954.2 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
Cu 2p3/2 fitted component	931.9 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
Cu 2p3/2 fitted component	934.2 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
High-resolution Cu 2p fitted peaks	Cu 2p3/2 at 934.2 and 931.9 eV; Cu 2p1/2 at 954.2 and 952.5 eV	—	—	Text Exact Reported	3 · 2.1 Material Characterization · Figure 2b
Cu 2p full-scan binding energy	934.30 eV	—	—	Text Exact Reported	3 · 2.1 Material Characterization · Figure 2a
N 1s binding energy	399.80 eV	—	—	Text Exact Reported	3 · 2.1 Material Characterization · Figure 2a
N 1s component	397.4 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
N 1s component	399.0 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
O 1s binding energy	530.90 eV	—	—	Text Exact Reported	3 · 2.1 Material Characterization · Figure 2a
O 1s component	528.0 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
O 1s component	530.1 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3
O 1s component	531.6 eV	—	—	Figure Axis Exact Reported	3 · Supporting Information · Figure S3