Electrical Transport — High-Performance Ni3(HHTP)2 Film-Based Flexible Field-Effect Transistor Gas Sensors

3 measurement groups · 17 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Output characteristics and sensing under flat and bent geometries

Ni3(HHTP)2 film FET sensor on PI · Thin Film

Bending angles 0, 57.3, -57.3, 95.5 and -95.5 deg; sensing to 0.5 ppm NO2; Vds = 0.1 V, Vgs = 0 V, room temperature.

Temperature: room temperature
Atmosphere: ambient air and NO2 in air
Geometry: Flexible PI FET under forward/backward bending
Context: Pristine Ni3(HHTP)2 film on PI
Measurement source: p006 · Results and Discussion · Figure 5; SI Part 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bending angle from 3 mm radius cylinder	alpha1 = 95.54 deg for r = 3 mm and L = 10 mm	—	—	Figure Axis Approximate	S3 · Bending angle calculation
Bending angle from 5 mm radius cylinder	alpha2 = 57.32 deg for r = 5 mm and L = 10 mm	—	—	Figure Axis Approximate	S3 · Bending angle calculation
Bending angles tested	0, 57.3, -57.3, 95.5, and -95.5 deg	—	—	Caption Exact Reported	p006 · Figure caption · Figure 5a
Resistance under bending	flat 6.23E4 Ohm; -57.3 deg 6.67E4 Ohm; 57.3 deg 6.92E4 Ohm; -95.5 deg 8.45E4 Ohm; 95.5 deg 8.71E4 Ohm	—	—	Figure Axis Approximate	p006 · Figure · Figure 5b
NO2 sensing retained under bending	similar responses even for bending angles up to 95.5 deg	—	—	Text Qualitative	p005 · Results and Discussion · Figure 5c,d

FET output and transfer characteristics (Ids-Vds and Ids-Vgs)

Field-effect transistor measurements

Ni3(HHTP)2 FET sensor on Si/SiO2 back-gate substrate · Thin Film

Output characteristics: Vds = -1 to +1 V, step voltage 0.01 V, Vgs = +/-1, +/-10 and +/-30 V. Transfer characteristics: Vds = +0.01 V, Vgs = -40 to +40 V, step voltage 0.1 V; ambient condition; measured with Au electrodes on Si/SiO2 back-gate structure.

Temperature: room temperature
Atmosphere: ambient air
Geometry: Si/SiO2 back-gate FET with Au electrodes and Ni3(HHTP)2 conducting film channel
Context: Pristine Ni3(HHTP)2 film channel
Measurement source: S6 · Figure caption · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ohmic contact	Ids-Vds curve linearity and symmetry indicate Ohmic contact between Ni3(HHTP)2 film and Au electrode	—	—	Text Qualitative	p003 · Results and Discussion · Figure S5a cited
Current on-off ratio	1.1	—	—	Text Approximate	p004 · Results and Discussion · Figure S5b cited
Semiconductor type	p-type semiconductor characteristic in air; holes are the main charge carrier	—	—	Text Qualitative	p004 · Results and Discussion · Figure S5b cited
Drain current labels at Vds = 0.01 V for gate-bias series	approximately 6.52E-05, 6.22E-05, 6.15E-05, 6.14E-05, 6.07E-05, and 6.02E-05 A from Figure S5a inset labels	—	—	Figure Axis Approximate	S6 · Figure · Figure S5a
Transfer curve drain-current labels	Vgs -30 V: 6.54E-05 A; -10 V: 6.24E-05 A; -1 V: 6.15E-05 A; +1 V: 6.14E-05 A; +10 V: 6.08E-05 A; +30 V: 5.98E-05 A	—	—	Figure Axis Approximate	S6 · Figure · Figure S5b

Ids-Vds initial resistance comparison across substrates

Ni3(HHTP)2 film FET sensor on PI · Thin Film

Ni3(HHTP)2 films on different flexible substrates; Ohmic contact reported for all samples from SI Figure S9.

Atmosphere: ambient air
Geometry: FET devices on PI, tape, facemask, paper cup, tablecloth and take-out bag
Context: Pristine Ni3(HHTP)2 films on different substrates
Measurement source: S8 · Figure caption · Figure S9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Initial resistance on facemask	1.00 x 10^5 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Initial resistance on paper cup	6.82 x 10^4 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Initial resistance on PI	6.32 x 10^4 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Initial resistance on tablecloth	1.02 x 10^5 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Initial resistance on take-out bag (textile)	8.83 x 10^4 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Initial resistance on tape (PET)	6.86 x 10^4 Ohm	—	—	Text Exact Reported	p008 · Results and Discussion · Figure S9 cited
Ohmic contacts on all substrates	all samples have ideal Ohmic contact	—	—	Text Qualitative	p008 · Results and Discussion · Figure S9 cited