Primary studyCore evidenceThin Film Device

High-Performance Ni3(HHTP)2 Film-Based Flexible Field-Effect Transistor Gas Sensors

Lu G., Zong B., Tao T. et al. · ACS Sensors · 2024 · 1916-1926

2materials
9samples
2synthesis routes
16measurements
61results
7claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: High

The PI-supported Ni3(HHTP)2 FET maintains similar NO2 responses under bending and repeated bending, supporting flexible sensor operation.

Caveat: SEM before/after bending is supplied in SI Figure S8; raw cycling data are not tabulated.

p005 · Results and Discussion · Figure 5 · Linked to 4 structured results

Application RelevanceSupport assessment: High

The Ni3(HHTP)2 FET sensor detects NO2 at room temperature with high sensitivity, a calculated 56 ppb LOD, and strong selectivity relative to tested inorganic and VOC gases.

Caveat: Several selectivity values were read from figure labels rather than a table.

p004 · Results and Discussion · Figure 3 · Linked to 4 structured results

CaveatSupport assessment: High

The SI was checked for synthesis details; it adds characterisation methods, DFT settings, bending-angle calculation and supplemental figures/tables, but does not provide a separate expanded synthesis recipe beyond the main-text in situ growth procedure.

Caveat: Substrate-specific non-PI recipes therefore remain partial because the paper states only that they used a similar procedure.

S2-S11 · Supporting Information

Phase AssignmentSupport assessment: High

The in situ aqueous route successfully forms Ni3(HHTP)2 with characteristic diffraction peaks, nanorod morphology, Ni/C/O elemental distribution, and XPS evidence for Ni2+ coordinated with HHTP.

Caveat: XPS and N2 isotherm plots are in the SI and were checked; no CIF/refinement is supplied.

p003 · Results and Discussion · Figure 2; Figures S2-S3 · Linked to 4 structured results

Structure Property LinkSupport assessment: Medium

Across flexible substrates, smaller Ni3(HHTP)2 nanorods give higher NO2 response, consistent with higher specific surface area and more active adsorption sites.

Caveat: Response values for the substrate series are approximate from figure axes; nanorod size labels are read from Figure 7 histograms.

p008 · Results and Discussion · Figure 6c and Figure 7 · Linked to 7 structured results

Structure Property LinkSupport assessment: High

DFT indicates Ni-sites are the preferred NO2 adsorption sites on Ni3(HHTP)2 because the Ni-site adsorption energy is more negative than OH- or benzene-site adsorption.

Caveat: DFT settings are available in the SI, but the raw model files/coordinates are not supplied.

p008 · Results and Discussion · Figure 8a,b · Linked to 4 structured results

Transport MechanismSupport assessment: High

NO2 acts as an electron acceptor on p-type Ni3(HHTP)2, increasing hole concentration and therefore conductivity/current during sensing.

Caveat: Transport behaviour is demonstrated by FET transfer curves and interpreted with standard NO2 electron-acceptor mechanism plus DFT adsorption energies.

p008 · Results and Discussion · Figure 8c · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Ni3(HHTP)2Browse family: Ni₃(HHTP)₂ / Ni–HHTPNi3(HHTP)2Nickel nodes; XPS indicates Ni is present as Ni2+ coordinated with the HHTP ligand. · HHTP, hexahydroxytriphenylene.2D · PristineConductive metal-organic framework with characteristic XRD peaks assigned to (100), (200), (210), (220), (221), and (004) planes; hexagonal crystal system inferred from 1.75 nm (100) lattice spacing.p001 · Abstract
Ni3(HHTP)2 DFT modelBrowse family: Ni₃(HHTP)₂ / Ni–HHTPNi3(HHTP)2Ni sites in the simulated framework. · HHTP framework model with OH and benzene adsorption sites.2D · Model SystemComputational model used to compare NO2 adsorption at Ni-, OH-, and benzene-sites.p008 · Results and Discussion · Figure 8

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 9 sample records
SampleForm and roleProcessing and geometrySource
NO2 on Ni3(HHTP)2 computational adsorption modelresearch_0192__mat__mat_ni_hhtp2_modelModel · Model System · ModelDFT model of NO2 adsorption at Ni-, OH-, and benzene-sites on Ni3(HHTP)2.p008 · Results and Discussion · Figure 8
Ni3(HHTP)2 film FET sensor on facemaskresearch_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkNi3(HHTP)2 film sensor fabricated by a procedure similar to the PI device.Facemaskp006 · Results and Discussion · Figure 6
Prepared Ni3(HHTP)2 materialresearch_0192__mat__mat_ni_hhtp2Powder · Target Sample · Pristine FrameworkPrepared Ni3(HHTP)2 nanorod material used for TEM/HRTEM, EDS, XRD, N2 adsorption and XPS discussion; exact isolation state is not specified in the main text.p002 · Figure caption · Figure 2
Ni3(HHTP)2 film FET sensor on paper cupresearch_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkNi3(HHTP)2 film sensor fabricated by a procedure similar to the PI device.Paper cupp006 · Results and Discussion · Figure 6
Ni3(HHTP)2 film FET sensor on PIresearch_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkIn situ grown Ni3(HHTP)2 film on oxygen-plasma-treated PI/Au FET substrate; used as primary gas-sensor sample.Polyimide (PI) substrate with thermally evaporated Au electrodes · ca. 788.2 nm Ni3(HHTP)2 film; PI substrate cut to 10 x 5 mm2; Au electrode finger gap 100 um, channel length 6 mm, Au thickness 100 nmp003 · Experimental Section
Ni3(HHTP)2 FET sensor on Si/SiO2 back-gate substrateresearch_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkBack-gate FET configuration used for electrical output and transfer characteristics; substrate/device photograph shown in SI Figure S1.Si/SiO2 substrate with gold electrodes and back-gate structure · Gold electrodes shown on Si/SiO2 in Figure S1; Ni3(HHTP)2 film/device used for output and transfer characteristics.p003 · Experimental Section · Figure S1 cited
Ni3(HHTP)2 film FET sensor on tableclothresearch_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkNi3(HHTP)2 film sensor fabricated by a procedure similar to the PI device.Tableclothp006 · Results and Discussion · Figure 6
Ni3(HHTP)2 film FET sensor on take-out bag (textile)research_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkNi3(HHTP)2 film sensor fabricated by a procedure similar to the PI device.Take-out bag (textile)p006 · Results and Discussion · Figure 6
Ni3(HHTP)2 film FET sensor on tape (PET)research_0192__mat__mat_ni_hhtp2Thin Film · Target Sample · Pristine FrameworkNi3(HHTP)2 film sensor fabricated by a procedure similar to the PI device.Tape (PET)p003 · Experimental Section