cMOF Evidence Base
Electrical Transport — Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Measurement evidence

Electrical Transport

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors · Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

18 measurement groups · 159 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Modified transmission-line method (MTLM)

AlOx/TEOS/CuSCN stack · Thin Film

Width-normalised contact resistance RcW extracted from output characteristics; lowest/highest-magnitude gate voltage VG = -3.5 V highlighted in text.

Atmosphere
N2 atmosphere for device measurements
Geometry
BG-TC TFT; variable channel length; RcW at VG = -3.5 V
Context
CuSCN/dielectric interface comparison
Measurement source
p.7,p.9 · 2.4 Improvements; 4.13 Contact Resistance Analysis · Figure 6c; Figure S14
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
RcW at VG = -3.5 V, bare AlOx dielectric4.1 Mohm cm——Text
Rounded Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6c
RcW at VG = -3.5 V, AlOx/MAA dielectric1.2 Mohm cm——Text
Rounded Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6c
RcW at VG = -3.5 V, AlOx/TEOS dielectricMarked as a best value within this paper0.2 Mohm cm——Text
Rounded Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6c

SI Table S1 comparative TFT performance summary

Field-effect transistor measurements

AlOx/TEOS/CuSCN + THF stack · Thin Film

This-work row compared against recent CuSCN and other wide-band-gap p-type TFT reports.

Geometry
BG-TC; Al2O3 spin coating dielectric
Context
CuSCN TFT literature context
Measurement source
SI p.16 · Table S1 · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
SI Table S1 field-effect mobilityMarked as a best value within this paper0.007 cm2 V-1 s-1——SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1
SI Table S1 on/off ratio8 x 10^2800 dimensionless—SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1
SI Table S1 operating voltage-2 V——SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1
SI Table S1 threshold voltage-1.95 V——SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1
SI Table S1 subthreshold swing0.75 V dec-1——SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1
SI Table S1 trap state density3.1 x 10^13 eV-1 cm-231000000000000 eV-1 cm-2—SI Table
Rounded Reported		SI p.16 · Table S1 · Table S1

Negative bias stress stability

AlOx/TEOS/CuSCN + THF stack · Thin Film

Gate-bias stress with VG = -2 V from 0 to 3000 s; plotted delta Vth and ID,on(t)/ID,on(0).

Atmosphere
N2-filled glovebox
Geometry
BG-TC TFT
Context
AlOx versus AlOx/TEOS with/without THF
Measurement source
p.7,p.9 · 2.4 Improvements; 4.14 Bias Stability Measurements · Figure 6d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
delta Vth at 3000 s, AlOxabout 0.7 V——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d
ID,on(t)/ID,on(0) at 3000 s, AlOxabout 2.5——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d
delta Vth at 3000 s, AlOx/TEOSabout 0.42 V——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d
ID,on(t)/ID,on(0) at 3000 s, AlOx/TEOSabout 3.5——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d
delta Vth at 3000 s, AlOx/TEOS+THFMarked as a best value within this paperabout 0.15 V——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d
ID,on(t)/ID,on(0) at 3000 s, AlOx/TEOS+THFabout 2.9——Visual Estimate
Approximate		p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 6d

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx-200/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci357 +/- 7 nF cm-2—+/- 7Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness26.3 +/- 5.6 nm—+/- 5.6Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_hMarked as a best value within this paper1.7 +/- 0.23 x 10^-3 cm2 V^-1 s^-10.0017 cm2 V^-1 s^-1+/- 0.23Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,maxMarked as a best value within this paper2.2 x 10^-3 cm2 V^-1 s^-10.0022 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.59 +/- 0.12 V—+/- 0.12Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth1.08 +/- 0.10 V dec-1—+/- 0.10Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density NtMarked as a best value within this paper3.85 +/- 0.36 x 10^13 eV-1 cm-238500000000000 eV-1 cm-2+/- 0.36Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on3.22 +/- 0.67 x 10^-8 A3.2200000000000004e-8 A+/- 0.67Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off0.43 +/- 0.08 x 10^-10 A4.3e-11 A+/- 0.08Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio7.6 +/- 0.98 x 10^2760 dimensionless+/- 0.98Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx-300/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci524 +/- 1 nF cm-2—+/- 1Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness24.7 +/- 7.1 nm—+/- 7.1Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.56 +/- 0.08 x 10^-3 cm2 V^-1 s^-10.0005600000000000001 cm2 V^-1 s^-1+/- 0.08Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.72 x 10^-3 cm2 V^-1 s^-10.0007199999999999999 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.47 +/- 0.10 V—+/- 0.10Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.94 +/- 0.06 V dec-1—+/- 0.06Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt4.85 +/- 0.30 x 10^13 eV-1 cm-248500000000000 eV-1 cm-2+/- 0.30Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on2.22 +/- 0.70 x 10^-8 A2.2200000000000004e-8 A+/- 0.70Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.87 +/- 0.51 x 10^-10 A1.8700000000000003e-10 A+/- 0.51Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio1.0 +/- 0.69 x 10^2100 dimensionless+/- 0.69Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx-400/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci583 +/- 1 nF cm-2—+/- 1Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness27.6 +/- 7.4 nm—+/- 7.4Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.43 +/- 0.03 x 10^-3 cm2 V^-1 s^-10.00043 cm2 V^-1 s^-1+/- 0.03Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.47 x 10^-3 cm2 V^-1 s^-10.00047 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.6 +/- 0.09 V—+/- 0.09Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.94 +/- 0.06 V dec-1—+/- 0.06Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt5.39 +/- 0.38 x 10^13 eV-1 cm-253900000000000 eV-1 cm-2+/- 0.38Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on1.43 +/- 0.40 x 10^-8 A1.4299999999999999e-8 A+/- 0.40Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.2 +/- 0.22 x 10^-10 A1.2e-10 A+/- 0.22Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio1.21 +/- 0.29 x 10^2121 dimensionless+/- 0.29Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

GaOx-200/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci818 +/- 28 nF cm-2—+/- 28Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness17.2 +/- 3.7 nm—+/- 3.7Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.86 +/- 0.15 x 10^-3 cm2 V^-1 s^-10.00086 cm2 V^-1 s^-1+/- 0.15Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max1.14 x 10^-3 cm2 V^-1 s^-10.00114 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.22 +/- 0.10 V—+/- 0.10Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.72 +/- 0.12 V dec-1—+/- 0.12Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt5.8 +/- 1.04 x 10^13 eV-1 cm-258000000000000 eV-1 cm-2+/- 1.04Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on1.01 +/- 0.16 x 10^-8 A1.0100000000000001e-8 A+/- 0.16Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.59 +/- 0.38 x 10^-10 A1.5900000000000002e-10 A+/- 0.38Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio0.65 +/- 0.10 x 10^265 dimensionless+/- 0.10Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

GaOx-300/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci862 +/- 17 nF cm-2—+/- 17Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness16.9 +/- 3.9 nm—+/- 3.9Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.35 +/- 0.07 x 10^-3 cm2 V^-1 s^-10.00035 cm2 V^-1 s^-1+/- 0.07Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.5 x 10^-3 cm2 V^-1 s^-10.0005 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.25 +/- 0.10 V—+/- 0.10Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.79 +/- 0.12 V dec-1—+/- 0.12Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt6.47 +/- 0.98 x 10^13 eV-1 cm-264700000000000 eV-1 cm-2+/- 0.98Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on0.88 +/- 0.09 x 10^-8 A8.800000000000001e-9 A+/- 0.09Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.31 +/- 0.01 x 10^-10 A1.31e-10 A+/- 0.01Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio0.67 +/- 0.09 x 10^267 dimensionless+/- 0.09Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

GaOx-400/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci902 +/- 16 nF cm-2—+/- 16Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness18.4 +/- 4.9 nm—+/- 4.9Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.15 +/- 0.02 x 10^-3 cm2 V^-1 s^-10.00015 cm2 V^-1 s^-1+/- 0.02Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.19 x 10^-3 cm2 V^-1 s^-10.00019 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.23 +/- 0.11 V—+/- 0.11Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.96 +/- 0.09 V dec-1—+/- 0.09Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt8.53 +/- 0.82 x 10^13 eV-1 cm-285300000000000 eV-1 cm-2+/- 0.82Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on0.45 +/- 0.11 x 10^-8 A4.500000000000001e-9 A+/- 0.11Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.14 +/- 0.36 x 10^-10 A1.14e-10 A+/- 0.36Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio0.42 +/- 0.15 x 10^242 dimensionless+/- 0.15Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

HfOx-200/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci828 +/- 18 nF cm-2—+/- 18Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness31.0 +/- 9.4 nm—+/- 9.4Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.28 +/- 0.05 x 10^-3 cm2 V^-1 s^-10.00028000000000000003 cm2 V^-1 s^-1+/- 0.05Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.37 x 10^-3 cm2 V^-1 s^-10.00037 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.3 +/- 0.14 V—+/- 0.14Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.82 +/- 0.06 V dec-1—+/- 0.06Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt6.24 +/- 0.20 x 10^13 eV-1 cm-262400000000000 eV-1 cm-2+/- 0.20Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on1.16 +/- 0.37 x 10^-8 A1.16e-8 A+/- 0.37Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.06 +/- 0.05 x 10^-10 A1.0600000000000001e-10 A+/- 0.05Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio1.11 +/- 0.41 x 10^2111.00000000000001 dimensionless+/- 0.41Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

HfOx-300/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci716 +/- 8 nF cm-2—+/- 8Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness38.5 +/- 4.6 nm—+/- 4.6Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.19 +/- 0.05 x 10^-3 cm2 V^-1 s^-10.00019 cm2 V^-1 s^-1+/- 0.05Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.29 x 10^-3 cm2 V^-1 s^-10.00029 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.29 +/- 0.12 V—+/- 0.12Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.91 +/- 0.06 V dec-1—+/- 0.06Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt6.41 +/- 0.45 x 10^13 eV-1 cm-264100000000000 eV-1 cm-2+/- 0.45Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on0.87 +/- 0.09 x 10^-8 A8.7e-9 A+/- 0.09Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off1.04 +/- 0.03 x 10^-10 A1.04e-10 A+/- 0.03Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio0.83 +/- 0.07 x 10^283 dimensionless+/- 0.07Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

HfOx-400/CuSCN BG-TC TFT · Thin Film

Drain voltage -2 V for representative transfer curves; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with high-k oxide dielectric
Measurement source
p.3 · 2.2 Characteristics of TFTs · Figure 2; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci841 +/- 6 nF cm-2—+/- 6Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
dielectric thickness31.4 +/- 5.0 nm—+/- 5.0Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
field-effect hole mobility mu_h0.12 +/- 0.02 x 10^-3 cm2 V^-1 s^-10.00012 cm2 V^-1 s^-1+/- 0.02Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
maximum field-effect hole mobility mu_h,max0.15 x 10^-3 cm2 V^-1 s^-10.00015 cm2 V^-1 s^-1—Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
threshold voltage Vth-1.22 +/- 0.12 V—+/- 0.12Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
subthreshold swing Sth0.97 +/- 0.13 V dec-1—+/- 0.13Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
trap state density Nt7.98 +/- 1.16 x 10^13 eV-1 cm-279800000000000 eV-1 cm-2+/- 1.16Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on drain current ID,on0.64 +/- 0.11 x 10^-8 A6.4e-9 A+/- 0.11Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
off drain current ID,off2.92 +/- 0.91 x 10^-10 A2.92e-10 A+/- 0.91Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1
on/off drain current ratio0.25 +/- 0.11 x 10^225 dimensionless+/- 0.11Table
Exact Reported		p.3 · 2.2 Characteristics of TFTs · Table 1

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/CuSCN stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci357 +/- 7 nF cm-2—+/- 7Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
dielectric thickness26.3 +/- 5.6 nm—+/- 5.6Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
field-effect hole mobility mu_h1.7 +/- 0.23 x 10^-3 cm2 V^-1 s^-10.0017 cm2 V^-1 s^-1+/- 0.23Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,max2.2 x 10^-3 cm2 V^-1 s^-10.0022 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.59 +/- 0.12 V—+/- 0.12Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth1.08 +/- 0.10 V dec-1—+/- 0.10Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density Nt3.85 +/- 0.36 x 10^13 eV-1 cm-238500000000000 eV-1 cm-2+/- 0.36Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,on0.32 +/- 0.07 x 10^-7 A3.2e-8 A+/- 0.07Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off0.43 +/- 0.08 x 10^-10 A4.3e-11 A+/- 0.08Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio7.6 +/- 0.98 x 10^2760 dimensionless+/- 0.98Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/CuSCN + THF stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
field-effect hole mobility mu_h2.83 +/- 0.67 x 10^-3 cm2 V^-1 s^-10.00283 cm2 V^-1 s^-1+/- 0.67Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,max3.54 x 10^-3 cm2 V^-1 s^-10.00354 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.6 +/- 0.18 V—+/- 0.18Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth0.96 +/- 0.09 V dec-1—+/- 0.09Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density Nt3.42 +/- 0.35 x 10^13 eV-1 cm-234200000000000 eV-1 cm-2+/- 0.35Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,on0.87 +/- 0.08 x 10^-7 A8.7e-8 A+/- 0.08Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off1.65 +/- 0.27 x 10^-10 A1.65e-10 A+/- 0.27Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio5.39 +/- 0.92 x 10^2539 dimensionless+/- 0.92Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/MAA/CuSCN stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci315 +/- 10 nF cm-2—+/- 10Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
dielectric thickness23.6 +/- 8.8 nm—+/- 8.8Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
field-effect hole mobility mu_h2.23 +/- 0.36 x 10^-3 cm2 V^-1 s^-10.00223 cm2 V^-1 s^-1+/- 0.36Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,max2.96 x 10^-3 cm2 V^-1 s^-10.00296 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.63 +/- 0.13 V—+/- 0.13Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth0.99 +/- 0.19 V dec-1—+/- 0.19Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density Nt3.08 +/- 0.65 x 10^13 eV-1 cm-230800000000000 eV-1 cm-2+/- 0.65Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,on0.53 +/- 0.10 x 10^-7 A5.3e-8 A+/- 0.10Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off1.44 +/- 0.32 x 10^-10 A1.44e-10 A+/- 0.32Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio3.78 +/- 0.71 x 10^2378 dimensionless+/- 0.71Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/MAA/CuSCN + THF stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
field-effect hole mobility mu_h4.8 +/- 0.43 x 10^-3 cm2 V^-1 s^-10.0048 cm2 V^-1 s^-1+/- 0.43Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,max5.51 x 10^-3 cm2 V^-1 s^-10.00551 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.36 +/- 0.18 V—+/- 0.18Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth0.71 +/- 0.05 V dec-1—+/- 0.05Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density Nt2.11 +/- 0.17 x 10^13 eV-1 cm-221100000000000 eV-1 cm-2+/- 0.17Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,on1.71 +/- 0.16 x 10^-7 A1.7099999999999998e-7 A+/- 0.16Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off2.92 +/- 0.10 x 10^-10 A2.92e-10 A+/- 0.10Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio5.9 +/- 0.71 x 10^2590 dimensionless+/- 0.71Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/TEOS/CuSCN stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
geometric capacitance Ci423 +/- 7 nF cm-2—+/- 7Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
dielectric thickness29.0 +/- 7.5 nm—+/- 7.5Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
field-effect hole mobility mu_h3.2 +/- 0.22 x 10^-3 cm2 V^-1 s^-10.0032 cm2 V^-1 s^-1+/- 0.22Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,max3.76 x 10^-3 cm2 V^-1 s^-10.00376 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.71 +/- 0.13 V—+/- 0.13Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth0.88 +/- 0.12 V dec-1—+/- 0.12Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density Nt3.66 +/- 0.53 x 10^13 eV-1 cm-236600000000000 eV-1 cm-2+/- 0.53Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,on1.1 +/- 0.18 x 10^-7 A1.1e-7 A+/- 0.18Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off1.23 +/- 0.25 x 10^-10 A1.2300000000000001e-10 A+/- 0.25Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio9.06 +/- 0.88 x 10^2906 dimensionless+/- 0.88Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4

BG-TC TFT transfer/output characterization

Field-effect transistor measurements

AlOx/TEOS/CuSCN + THF stack · Thin Film

AlOx-200 baseline with MAA or TEOS passivation and/or THF antisolvent; parameters averaged from at least 10 devices.

Atmosphere
N2 atmosphere
Geometry
bottom-gate top-contact; W = 1000 um, L = 30 um
Context
CuSCN p-channel with AlOx-based dielectric/passivation
Measurement source
p.7 · 2.4 Improvements in Hole-Transport Properties · Figure 5; Figure 6; Table 4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
field-effect hole mobility mu_hMarked as a best value within this paper6.98 +/- 0.72 x 10^-3 cm2 V^-1 s^-10.006980000000000001 cm2 V^-1 s^-1+/- 0.72Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
maximum field-effect hole mobility mu_h,maxMarked as a best value within this paper8.44 x 10^-3 cm2 V^-1 s^-10.00844 cm2 V^-1 s^-1—Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
threshold voltage Vth-1.95 +/- 0.20 V—+/- 0.20Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
subthreshold swing Sth0.75 +/- 0.04 V dec-1—+/- 0.04Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
trap state density NtMarked as a best value within this paper3.07 +/- 0.19 x 10^13 eV-1 cm-230700000000000 eV-1 cm-2+/- 0.19Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on drain current ID,onMarked as a best value within this paper2.49 +/- 0.30 x 10^-7 A2.49e-7 A+/- 0.30Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
off drain current ID,off3.04 +/- 0.56 x 10^-10 A3.0400000000000004e-10 A+/- 0.56Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4
on/off drain current ratio8.28 +/- 0.85 x 10^2827.9999999999999 dimensionless+/- 0.85Table
Exact Reported		p.7 · 2.4 Improvements in Hole-Transport Properties · Table 4